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Avalanche multiplication due to impact ionization in quantum-well infrared photodetectors: A quantitative approach

Applied physics letters, 2003-04, Vol.82 (17), p.2907-2909

2003

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Acoustically driven Dirac electrons in monolayer graphene

Applied physics letters, 2020-03, Vol.116 (10)

2020

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The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

Applied physics letters, 2021-05, Vol.118 (22)

2021

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Effects of electron confinement on the acoustoelectric current in suspended quantum point contacts

Applied physics letters, 2017-05, Vol.110 (22)

2017

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Phenomenological theory of bistability in polariton diodes

Applied physics letters, 2010-08, Vol.97 (9), p.091107-091107-3

2010

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Detection of coherent acoustic oscillations in a quantumelectromechanical resonator

Applied physics letters, 2007-01, Vol.90 (4), p.043101-043101-3

2007

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Quantum-confined Stark effect in a single InGaN quantum dotunder a lateral electric field

Applied physics letters, 2005-05, Vol.86 (21), p.213103-213103-3

2005

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Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor

Applied physics letters, 2021-06, Vol.118 (24)

2021

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GaN/AlGaN 2DEGs in the quantum regime: Magneto-transport and photoluminescence to 60 tesla

Applied physics letters, 2020-12, Vol.117 (26)

2020

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Toward quantum efficiency enhancement of kesterite nanostructured absorber: A prospective of carrier quantization effect

Applied physics letters, 2020-09, Vol.117 (13)

2020

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Thermal resistance optimization of GaN/substrate stacks considering thermal boundary resistance and temperature-dependent thermal conductivity

Applied physics letters, 2016-10, Vol.109 (15)

2016

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Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation

Applied physics letters, 2022-07, Vol.121 (1)

2022

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Surface acoustic wave regulated single photon emission from a coupled quantum dot–nanocavity system

Applied physics letters, 2016-07, Vol.109 (3)

2016

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AlGaN/GaN MISHEMTs with epitaxially grown GdScO3 as high-κ dielectric

Applied physics letters, 2021-02, Vol.118 (5)

2021

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Surface states in AlGaN/GaN high electron mobility transistors: Quantitative energetic profiles and dynamics of the surface Fermi level

Applied physics letters, 2019-07, Vol.115 (2)

2019

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Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

Applied physics letters, 2020-04, Vol.116 (14)

2020

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Strong interlayer excitons in PtSe2/ZrS2 van der Waals heterobilayer

Applied physics letters, 2021-03, Vol.118 (9)

2021

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A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Applied physics letters, 2021-10, Vol.119 (17)

2021

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Multiple exceptional points and phase transitions of a one-dimensional P T-symmetric Lieb photonic lattice

Applied physics letters, 2023-10, Vol.123 (16)

2023

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A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

Applied physics letters, 2012-03, Vol.100 (11), p.113509-113509-4

2012

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Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Applied physics letters, 2024-07, Vol.125 (3)

2024

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Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

Applied physics letters, 2017-06, Vol.110 (24)

2017

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Tunable ultraviolet vertically-emitting organic laser

Applied physics letters, 2011-03, Vol.98 (13), p.131102-131102-3

2011

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Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

Applied physics letters, 2005-06, Vol.86 (25), p.253502-253502-3

2005

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Exciton confinement and trapping dynamics in double-graded-bandgap quantum nanowires

Applied physics letters, 2012-05, Vol.100 (21), p.211907-211907-4

2012

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Avalanche multiplication due to impact ionization in quantum-well infrared photodetectors: A quantitative approach

Acoustically driven Dirac electrons in monolayer graphene

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

Effects of electron confinement on the acoustoelectric current in suspended quantum point contacts

Phenomenological theory of bistability in polariton diodes

Detection of coherent acoustic oscillations in a quantumelectromechanical resonator

Quantum-confined Stark effect in a single InGaN quantum dotunder a lateral electric field

Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor

GaN/AlGaN 2DEGs in the quantum regime: Magneto-transport and photoluminescence to 60 tesla

Toward quantum efficiency enhancement of kesterite nanostructured absorber: A prospective of carrier quantization effect

Thermal resistance optimization of GaN/substrate stacks considering thermal boundary resistance and temperature-dependent thermal conductivity

Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation

Surface acoustic wave regulated single photon emission from a coupled quantum dot–nanocavity system

AlGaN/GaN MISHEMTs with epitaxially grown GdScO3 as high-κ dielectric

Surface states in AlGaN/GaN high electron mobility transistors: Quantitative energetic profiles and dynamics of the surface Fermi level

Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

Strong interlayer excitons in PtSe2/ZrS2 van der Waals heterobilayer

A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Multiple exceptional points and phase transitions of a one-dimensional P T-symmetric Lieb photonic lattice

A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

Tunable ultraviolet vertically-emitting organic laser

Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

Exciton confinement and trapping dynamics in double-graded-bandgap quantum nanowires

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