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0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET process

Electronics letters, 2018-02, Vol.54 (4), p.213-215

2018

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A 0.001-mm2 112.32-μW All-Digital PLL with Dual-Tuned DCO and Dual-Tuned Control Algorithm

Circuits, systems, and signal processing, 2022-03, Vol.41 (3), p.1563-1576

2022

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A 0.001 Per Cent Hall-Effect Probe

IEEE transactions on instrumentation and measurement, 1964-12, Vol.IM-13 (4), p.343-347

Mulady, James R.

1964

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0.0012 mm^sup 2^, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

Electronics letters, 2013-05, Vol.49 (11), p.1

2013

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0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

Electronics letters, 2013-05, Vol.49 (11), p.692-694

2013

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A 0.008‐mm2, 35‐μW, 8.87‐ps‐resolution CMOS time‐to‐digital converter using dual‐slope architecture

International journal of circuit theory and applications, 2017-04, Vol.45 (4), p.466-482

2017

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0.012 mm2 800 µW 0.1–6.4 GHz multi-protocol PLL with 14 psrms integrated jitter in 28 nm FD-SOI

Electronics letters, 2016-09, Vol.52 (18), p.1518-1520

2016

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0.013 mm2 and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects

Microwave and optical technology letters, 2013-10, Vol.55 (10), p.2484-2487

2013

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A 0.02% THD and 80 dB PSRR filterless class D amplifier with direct lithium battery hookup in mobile application

Journal of semiconductors, 2017-07, Vol.38 (7), p.60-67

2017

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0.027-in.-thick touchpad sensor combines pen input with mouse functions

Electronic design, 1998-03, Vol.46 (6), p.61

Maliniak, Lisa

1998

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A 0.03- to 3.6-GHz Frequency Synthesizer With Self-Biased VCO and Quadrature-Input Quadrature-Output Frequency Divider

IEEE transactions on circuits and systems. II, Express briefs, 2019-12, Vol.66 (12), p.1997-2001

2019

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A 0.038-mm2 SAW-Less Multiband Transceiver Using an N-Path SC Gain Loop

IEEE journal of solid-state circuits, 2017-08, Vol.52 (8), p.2055-2070

2017

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0.04 degree-per-hour MEMS disk resonator gyroscope with high-quality factor (510 k) and long decaying time constant (74.9 s)

Microsystems & nanoengineering, 2018-11, Vol.4 (1), p.32-11, Article 32

2018

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A 0.045- to 2.5-GHz Frequency Synthesizer With TDC-Based AFC and Phase Switching Multi-Modulus Divider

IEEE transactions on circuits and systems. I, Regular papers, 2020-12, Vol.67 (12), p.4470-4483

2020

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A 0.1-1.5 GHz multi-octave quadruple-stacked CMOS power amplifier

Journal of semiconductors, 2020-06, Vol.41 (6), p.62401-48

2020

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A 0.1-23-GHz SiGe BiCMOS analog multiplier and mixer based on attenuation-compensation technique

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers, 2004, p.417-420

2004

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A 0.1-28 GHz Differential Cascaded Distributed Amplifier in 0.18-μm CMOS Technology

2019 IEEE MTT-S International Wireless Symposium (IWS), 2019, p.1-3

2019

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A 0.1-3.4 GHz LNA with Multiple Feedback and Current-Reuse Technique based on 0.13-μm SOI CMOS

2019 IEEE MTT-S International Wireless Symposium (IWS), 2019, p.1-3

2019

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A 0.1–4.5 GHz MMIC Controlled Digital Step Attenuator Based on SiGe

Instruments and experimental techniques (New York), 2019-04, Vol.62 (2), p.175-184

2019

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A 0.1–4 GHz SDR receiver with reconfigurable 10–100 MHz signal bandwidth in 65 nm CMOS

Analog integrated circuits and signal processing, 2013-12, Vol.77 (3), p.567-582

2013

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A 0.1-52-GHz Triple Cascode Amplifier With Resistive Feedback

IEEE microwave and wireless components letters, 2019-08, Vol.29 (8), p.538-540

2019

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A 0.1-micron gate Al(0.5)In(0.5)As/Ga(0.5)In(0.5)As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35, p.818-823

1988

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0.1 mu m AlSb/InAs HEMTs with InAs subchannel

Electronics letters, 1998-07, Vol.34 (15), p.1525-1526

1998

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A 0.1- mu m gate Al sub(0.5)As/Ga sub(0.5)In sub(0.5)As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-01, Vol.35 (7), p.818-823

1988

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A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.818-823

1988

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1 – 25 von 897.454

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0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET process

A 0.001-mm2 112.32-μW All-Digital PLL with Dual-Tuned DCO and Dual-Tuned Control Algorithm

A 0.001 Per Cent Hall-Effect Probe

0.0012 mm^sup 2^, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

A 0.008‐mm2, 35‐μW, 8.87‐ps‐resolution CMOS time‐to‐digital converter using dual‐slope architecture

0.012 mm2 800 µW 0.1–6.4 GHz multi-protocol PLL with 14 psrms integrated jitter in 28 nm FD-SOI

0.013 mm2 and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects

A 0.02% THD and 80 dB PSRR filterless class D amplifier with direct lithium battery hookup in mobile application

0.027-in.-thick touchpad sensor combines pen input with mouse functions

A 0.03- to 3.6-GHz Frequency Synthesizer With Self-Biased VCO and Quadrature-Input Quadrature-Output Frequency Divider

A 0.038-mm2 SAW-Less Multiband Transceiver Using an N-Path SC Gain Loop

0.04 degree-per-hour MEMS disk resonator gyroscope with high-quality factor (510 k) and long decaying time constant (74.9 s)

A 0.045- to 2.5-GHz Frequency Synthesizer With TDC-Based AFC and Phase Switching Multi-Modulus Divider

A 0.1-1.5 GHz multi-octave quadruple-stacked CMOS power amplifier

A 0.1-23-GHz SiGe BiCMOS analog multiplier and mixer based on attenuation-compensation technique

A 0.1-28 GHz Differential Cascaded Distributed Amplifier in 0.18-μm CMOS Technology

A 0.1-3.4 GHz LNA with Multiple Feedback and Current-Reuse Technique based on 0.13-μm SOI CMOS

A 0.1–4.5 GHz MMIC Controlled Digital Step Attenuator Based on SiGe

A 0.1–4 GHz SDR receiver with reconfigurable 10–100 MHz signal bandwidth in 65 nm CMOS

A 0.1-52-GHz Triple Cascode Amplifier With Resistive Feedback

A 0.1-micron gate Al(0.5)In(0.5)As/Ga(0.5)In(0.5)As MODFET fabricated on GaAs substrates

0.1 mu m AlSb/InAs HEMTs with InAs subchannel

A 0.1- mu m gate Al sub(0.5)As/Ga sub(0.5)In sub(0.5)As MODFET fabricated on GaAs substrates

A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates

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