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Announcement: Special Topic “Invited Papers from the 27th International Conference on Defects in Semiconductors”

Journal of applied physics, 2014-01, Vol.115 (1)

2014

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Tutorial: Defects in semiconductors—Combining experiment and theory

Journal of applied physics, 2016-05, Vol.119 (18)

2016

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Defects in semiconductors

Journal of applied physics, 2022-10, Vol.132 (15)

2022

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Tutorial: Novel properties of defects in semiconductors revealed by their vibrational spectra

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Stability and electronic properties of planar defects in quaternary I2-II-IV-VI4 semiconductors

Journal of applied physics, 2018-10, Vol.124 (16)

2018

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Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors

Journal of applied physics, 2022-04, Vol.131 (15)

2022

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On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis

Journal of applied physics, 2017-04, Vol.121 (14)

2017

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Understanding the breakdown asymmetry of 4H-SiC power diodes with extended defects at locations along step-flow direction

Journal of applied physics, 2020-10, Vol.128 (16)

2020

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Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions

Journal of applied physics, 2019-03, Vol.125 (11)

2019

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Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors

Journal of applied physics, 2018-10, Vol.124 (16)

2018

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Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy

Journal of applied physics, 2022-11, Vol.132 (17)

2022

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Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride

Journal of applied physics, 2018-06, Vol.123 (22)

2018

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High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

Journal of applied physics, 2016-06, Vol.119 (24)

2016

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Unveiling the electrical and photo-physical properties of intrinsic n-type 2D WSe2 for high performance field-effect transistors

Journal of applied physics, 2022-03, Vol.131 (9)

2022

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Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

Journal of applied physics, 2019-01, Vol.125 (3)

2019

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Publisher's Note: "First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si - SiO 2 - HfO 2 stack" [J. Appl. Phys. 105, 061603 (2009)]

Journal of applied physics, 2009-06, Vol.105 (12), p.122415-122415-1

2009

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to Special Topic: Plenary and Invited Papers from the 30th International Conference on the Physics of Semiconductors, Seoul, South Korea, 2010

Journal of applied physics, 2011-05, Vol.109 (10), p.102301-102301-1

2011

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Dynamic quadrupole interactions in semiconductors

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP2

Journal of applied physics, 2023-06, Vol.133 (23)

2023

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Defect and grain boundary scattering in tungsten: A combined theoretical and experimental study

Journal of applied physics, 2018-04, Vol.123 (15)

2018

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Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties

Journal of applied physics, 2019-11, Vol.126 (18)

2019

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Electron-phonon relaxation and excited electron distribution in gallium nitride

Journal of applied physics, 2016-08, Vol.120 (8)

2016

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Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

Journal of applied physics, 2018-04, Vol.123 (16), p.161418-161418

2018

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Progress on and challenges of p-type formation for GaN power devices

Journal of applied physics, 2020-09, Vol.128 (9)

2020

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Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing

Journal of applied physics, 2022-02, Vol.131 (6)

2022

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Announcement: Special Topic “Invited Papers from the 27th International Conference on Defects in Semiconductors”

Tutorial: Defects in semiconductors—Combining experiment and theory

Defects in semiconductors

Tutorial: Novel properties of defects in semiconductors revealed by their vibrational spectra

Stability and electronic properties of planar defects in quaternary I2-II-IV-VI4 semiconductors

Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors

On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis

Understanding the breakdown asymmetry of 4H-SiC power diodes with extended defects at locations along step-flow direction

Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions

Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors

Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy

Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride

High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

Unveiling the electrical and photo-physical properties of intrinsic n-type 2D WSe2 for high performance field-effect transistors

Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

Publisher's Note: "First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si - SiO 2 - HfO 2 stack" [J. Appl. Phys. 105, 061603 (2009)]

to Special Topic: Plenary and Invited Papers from the 30th International Conference on the Physics of Semiconductors, Seoul, South Korea, 2010

Dynamic quadrupole interactions in semiconductors

Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP2

Defect and grain boundary scattering in tungsten: A combined theoretical and experimental study

Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties

Electron-phonon relaxation and excited electron distribution in gallium nitride

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

Progress on and challenges of p-type formation for GaN power devices

Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing

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