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Crystal Phase Engineering in Single InAs Nanowires

Nano letters, 2010-09, Vol.10 (9), p.3494-3499

2010

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RF Characterization of Vertical Wrap-Gated InAs/High- \kappa Nanowire Capacitors

IEEE transactions on electron devices, 2016-02, Vol.63 (2), p.584-589

2016

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Parallel-Coupled Quantum Dots in InAs Nanowires

Nano letters, 2017-12, Vol.17 (12), p.7847-7852

2017

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Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

Nano letters, 2017-07, Vol.17 (7), p.4373-4380

2017

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Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si

Nano letters, 2017-10, Vol.17 (10), p.6006-6010

2017

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High-Performance InAs Nanowire MOSFETs

IEEE electron device letters, 2012-06, Vol.33 (6), p.791-793

2012

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Large Thermoelectric Power Factor Enhancement Observed in InAs Nanowires

Nano letters, 2013-09, Vol.13 (9), p.4080-4086

2013

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Cooper-pair splitting in two parallel InAs nanowires

New journal of physics, 2018-06, Vol.20 (6), p.63021

2018

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InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4746-4751

2017

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A General Approach for Sharp Crystal Phase Switching in InAs, GaAs, InP, and GaP Nanowires Using Only Group V Flow

Nano letters, 2013-09, Vol.13 (9), p.4099-4105

2013

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Scaling of Vertical InAs-GaSb Nanowire Tunneling Field-Effect Transistors on Si

IEEE electron device letters, 2016-05, Vol.37 (5), p.549-552

2016

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InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors

Nano letters, 2010-10, Vol.10 (10), p.4080-4085

2010

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High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

IEEE electron device letters, 2013-02, Vol.34 (2), p.211-213

2013

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Low Trap Density in InAs/High‑k Nanowire Gate Stacks with Optimized Growth and Doping Conditions

Nano letters, 2016-04, Vol.16 (4), p.2418-2425

2016

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Branched InAs nanowire growth by droplet confinement

Applied physics letters, 2018-09, Vol.113 (12)

2018

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Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications

Nanotechnology, 2012-01, Vol.23 (1), p.015302-1-7

2012

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Side-gated, enhancement mode, InAs nanowire double quantum dot devices-toward controlling transverse electric fields in spin-transport measurements

Nanotechnology, 2019-04, Vol.30 (14), p.144002-144002

2019

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Single InAs/GaSb Nanowire Low-Power CMOS Inverter

Nano letters, 2012-11, Vol.12 (11), p.5593-5597

2012

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Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires

Nano letters, 2011-06, Vol.11 (6), p.2424-2429

2011

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Sb Incorporation in Wurtzite and Zinc Blende InAs1−xSbx Branches on InAs Template Nanowires

Small (Weinheim an der Bergstrasse, Germany), 2018-03, Vol.14 (11), p.n/a

2018

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Au-Free Epitaxial Growth of InAs Nanowires

Nano letters, 2006-08, Vol.6 (8), p.1817-1821

2006

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Vertical high-mobility wrap-gated InAs nanowire transistor

IEEE electron device letters, 2006-05, Vol.27 (5), p.323-325

2006

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Electronic and Structural Differences between Wurtzite and Zinc Blende InAs Nanowire Surfaces: Experiment and Theory

ACS nano, 2014-12, Vol.8 (12), p.12346-12355

2014

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High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy

Small (Weinheim an der Bergstrasse, Germany), 2008-07, Vol.4 (7), p.878-882

2008

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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

Applied physics letters, 2020-02, Vol.116 (6)

2020

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Crystal Phase Engineering in Single InAs Nanowires

RF Characterization of Vertical Wrap-Gated InAs/High- \kappa Nanowire Capacitors

Parallel-Coupled Quantum Dots in InAs Nanowires

Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si

High-Performance InAs Nanowire MOSFETs

Large Thermoelectric Power Factor Enhancement Observed in InAs Nanowires

Cooper-pair splitting in two parallel InAs nanowires

InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

A General Approach for Sharp Crystal Phase Switching in InAs, GaAs, InP, and GaP Nanowires Using Only Group V Flow

Scaling of Vertical InAs-GaSb Nanowire Tunneling Field-Effect Transistors on Si

InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors

High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

Low Trap Density in InAs/High‑k Nanowire Gate Stacks with Optimized Growth and Doping Conditions

Branched InAs nanowire growth by droplet confinement

Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications

Side-gated, enhancement mode, InAs nanowire double quantum dot devices-toward controlling transverse electric fields in spin-transport measurements

Single InAs/GaSb Nanowire Low-Power CMOS Inverter

Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires

Sb Incorporation in Wurtzite and Zinc Blende InAs1−xSbx Branches on InAs Template Nanowires

Au-Free Epitaxial Growth of InAs Nanowires

Vertical high-mobility wrap-gated InAs nanowire transistor

Electronic and Structural Differences between Wurtzite and Zinc Blende InAs Nanowire Surfaces: Experiment and Theory

High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy

Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

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