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Experimental decomposition of the positive bias temperature stress‐induced instability in self‐aligned coplanar InGaZnO thin‐film transistors and its modeling based on the multiple stretched‐exponential functions

Journal of the Society for Information Display, 2017-02, Vol.25 (2), p.98-107

2017

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Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition

Solid-state electronics, 2024-06, Vol.216, Article 108931

2024

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Degradation Due to Photo-Induced Electron in Top-Gate In-Ga-Zn-O Thin Film Transistors With n− Region Under Negative Bias Stress and Light Irradiation

IEEE electron device letters, 2023-05, Vol.44 (5), p.765-768

2023

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IEEE_Xplore

Physics-Based Compact Model of Current Stress-Induced Threshold Voltage Shift in Top-Gate Self-Aligned Amorphous InGaZnO Thin-Film Transistors

IEEE electron device letters, 2022-10, Vol.43 (10), p.1685-1688

2022

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IEEE_Xplore

P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique

SID International Symposium Digest of technical papers, 2019-09, Vol.50 (S1), p.656-659

2019

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Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor Performance

ACS applied materials & interfaces, 2013-08, Vol.5 (15), p.6990-6995

2013

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7‐4: Late‐News‐Paper: Development of High‐mobility Top‐gate IGZTO‐TFT and Suppression of Threshold Voltage Shift in Short Channel Utilizing Laser Irradiation Process

SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.79-82

2020

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24‐1: Invited Paper: Development of High Quality IGZO‐TFT with Same On‐Current as LTPS

SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.343-346

2020

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Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2404-2411

2014

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IEEE_Xplore

P‐7.6: Analysis between Subgap Density of State and NBIS of Top Gate a‐IGZO TFTs

SID International Symposium Digest of technical papers, 2019-09, Vol.50 (S1), p.813-815

2019

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Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer

IEEE electron device letters, 2014-03, Vol.35 (3), p.357-359

2014

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IEEE_Xplore

Self-aligned capillarity-assisted printing of top-gate thin-film transistors on plastic

Flexible and printed electronics, 2018-09, Vol.3 (3), p.35004

2018

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Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by NH3 Plasma Treatment

IEEE electron device letters, 2009-04, Vol.30 (4), p.374-376

2009

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37‐2: Development of high mobility top gate IGZO‐TFT for OLED display

SID International Symposium Digest of technical papers, 2019-06, Vol.50 (1), p.516-519

2019

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Organic field-effect transistors based on single-crystalline active layer and top-gate insulator consistently fabricated by electrostatic spray deposition

Organic electronics, 2015-09, Vol.24, p.165-169

2015

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P‐21: The Effect of Thermal Annealing Sequence on the Performance of Self‐Aligned Top‐Gate a‐IGZO TFTs

SID International Symposium Digest of technical papers, 2017-05, Vol.48 (1), p.1303-1306

2017

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Development of ZnO-based thin-film transistors with top gate structures

Journal of the Korean Physical Society, 2012, 60(1), , pp.55-58

2012

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P‐30: Thermally Activated and Field‐Enhanced Diffusion of Dopants in a‐InGaZnO TFTs Under Circuit Operations and Correlation to Device Stabilities

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.1149-1152

2022

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Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by \hbox Plasma Treatment

IEEE electron device letters, 2009-04, Vol.30 (4), p.374-376

2009

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IEEE_Xplore

24.4: High Performance Top‐gate Self‐aligned Coplanar a‐IGZO TFTs with Light Shielding Metal Design

SID International Symposium Digest of technical papers, 2018-04, Vol.49 (S1), p.259-262

2018

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A Top-Gate Carbon-Nanotube Field-Effect Transistor with a Titanium-Dioxide Insulator

Japanese Journal of Applied Physics, 2002-10, Vol.41 (10A), p.L1049-L1051

2002

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19‐3: Late-News Paper: Universal Method to Determine the Dynamic NBIS‐ and PBS‐induced Instabilities on Self‐aligned Coplanar InGaZnO Thin‐film Transistors

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.232-235

2018

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Effects of channel layer thickness on the electrical characteristics of top-gate staggered microcrystalline-Si thin-film transistors

Microelectronic engineering, 2011-07, Vol.88 (7), p.1582-1585

2011

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Flexible All-Organic Field-Effect Transistors Fabricated by Electrode-Peeling Transfer

Japanese Journal of Applied Physics, 2004-02, Vol.43 (No. 2A), p.L130-L132

2004

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21‐4: Distinguished Paper: Experimental Decomposition of the Positive Bias Temperature Stress‐induced Instability in Self‐aligned Coplanar InGaZnO Thin‐film Transistors and its Modeling based on the Multiple Stretched‐exponential Functions

SID International Symposium Digest of technical papers, 2017-05, Vol.48 (1), p.298-301

2017

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Experimental decomposition of the positive bias temperature stress‐induced instability in self‐aligned coplanar InGaZnO thin‐film transistors and its modeling based on the multiple stretched‐exponential functions

Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition

Degradation Due to Photo-Induced Electron in Top-Gate In-Ga-Zn-O Thin Film Transistors With n− Region Under Negative Bias Stress and Light Irradiation

Physics-Based Compact Model of Current Stress-Induced Threshold Voltage Shift in Top-Gate Self-Aligned Amorphous InGaZnO Thin-Film Transistors

P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique

Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor Performance

7‐4: Late‐News‐Paper: Development of High‐mobility Top‐gate IGZTO‐TFT and Suppression of Threshold Voltage Shift in Short Channel Utilizing Laser Irradiation Process

24‐1: Invited Paper: Development of High Quality IGZO‐TFT with Same On‐Current as LTPS

Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

P‐7.6: Analysis between Subgap Density of State and NBIS of Top Gate a‐IGZO TFTs

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer

Self-aligned capillarity-assisted printing of top-gate thin-film transistors on plastic

Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by NH3 Plasma Treatment

37‐2: Development of high mobility top gate IGZO‐TFT for OLED display

Organic field-effect transistors based on single-crystalline active layer and top-gate insulator consistently fabricated by electrostatic spray deposition

P‐21: The Effect of Thermal Annealing Sequence on the Performance of Self‐Aligned Top‐Gate a‐IGZO TFTs

Development of ZnO-based thin-film transistors with top gate structures

P‐30: Thermally Activated and Field‐Enhanced Diffusion of Dopants in a‐InGaZnO TFTs Under Circuit Operations and Correlation to Device Stabilities

Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by \hbox Plasma Treatment

24.4: High Performance Top‐gate Self‐aligned Coplanar a‐IGZO TFTs with Light Shielding Metal Design

A Top-Gate Carbon-Nanotube Field-Effect Transistor with a Titanium-Dioxide Insulator

19‐3: Late-News Paper: Universal Method to Determine the Dynamic NBIS‐ and PBS‐induced Instabilities on Self‐aligned Coplanar InGaZnO Thin‐film Transistors

Effects of channel layer thickness on the electrical characteristics of top-gate staggered microcrystalline-Si thin-film transistors

Flexible All-Organic Field-Effect Transistors Fabricated by Electrode-Peeling Transfer

21‐4: Distinguished Paper: Experimental Decomposition of the Positive Bias Temperature Stress‐induced Instability in Self‐aligned Coplanar InGaZnO Thin‐film Transistors and its Modeling based on the Multiple Stretched‐exponential Functions

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