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Electrical Demonstration of Sn-S-Based OTS Materials From Theoretical Design for Sustainable Innovation

IEEE transactions on electron devices, 2024-09, Vol.71 (9), p.5339-5344

2024

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Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array

Advanced materials (Weinheim), 2022-10, Vol.34 (40), p.n/a

2022

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Ultrafast Threshold Switching Dynamics in Phase‐Change Materials

Physica status solidi. PSS-RRL. Rapid research letters, 2022-09, Vol.16 (9), p.n/a

2022

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Measurement of Onset of Structural Relaxation in Melt‐Quenched Phase Change Materials

Advanced functional materials, 2021-09, Vol.31 (37), p.n/a

2021

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Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device

IEEE access, 2021, Vol.9, p.116953-116961

2021

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Spiking Neurons with Neural Dynamics Implemented Using Stochastic Memristors

Advanced electronic materials, 2024-01, Vol.10 (1), p.n/a

2024

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Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors

Advanced science, 2021-06, Vol.8 (12), p.2100208-n/a

2021

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Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

Microelectronic engineering, 2013-07, Vol.107, p.33-36

2013

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Extraction, chemical, and dual-functional memory and threshold resistive switching characteristics of Elaeodendron buchananii extract

Materials today communications, 2023-12, Vol.37, p.107159, Article 107159

2023

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Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Advanced materials (Weinheim), 2018-04, Vol.30 (14), p.e1705193-n/a

2018

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Nanoscale 3D Stackable Ag-Doped HfO x ‑Based Selector Devices Fabricated through Low-Temperature Hydrogen Annealing

ACS applied materials & interfaces, 2019-08, Vol.11 (32), p.29408-29415

2019

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Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes (Adv. Funct. Mater. 15/2024)

Advanced functional materials, 2024-04, Vol.34 (15), p.n/a

2024

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An Artificial Neuron Based on a Threshold Switching Memristor

IEEE electron device letters, 2018-02, Vol.39 (2), p.308-311

2018

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Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Advanced functional materials, 2018-02, Vol.28 (6), p.n/a

2018

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Optimal-Switching Adaptive Modulation for Multiuser Relay Networks with Feedback Delays

IEEE transactions on wireless communications, 2013-08, Vol.12 (8), p.3682-3695

2013

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Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Advanced functional materials, 2014-09, Vol.24 (36), p.5679-5686

2014

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Frequency switching leads to distinctive fast–slow behaviors in Duffing system

Chaos, solitons and fractals, 2024-09, Vol.186, p.115217, Article 115217

2024

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Redox memristors with volatile threshold switching behavior for neuromorphic computing

Journal of Electronic Science and Technology, 2022-12, Vol.20 (4), p.100177-374, Article 100177

2022

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Optimization of multi-branch switched diversity systems

IEEE transactions on communications, 2009-10, Vol.57 (10), p.2960-2970

2009

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3D cross-point phase-change memory for storage-class memory

Journal of physics. D, Applied physics, 2019-11, Vol.52 (47), p.473002

2019

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Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors

Advanced functional materials, 2022-04, Vol.32 (15), p.n/a

2022

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Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO x

Nanotechnology, 2020-03, Vol.31 (23), p.235701-235701

2020

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Artificial Visual Perception Nervous System Based on Low-Dimensional Material Photoelectric Memristors

ACS nano, 2021-11, Vol.15 (11), p.17319-17326

2021

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Improvement of NbO x -based threshold switching devices by implementing multilayer stacks

Semiconductor science and technology, 2019-07, Vol.34 (7), p.75005

2019

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Memory Switching: Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology (Adv. Funct. Mater. 36/2014)

Advanced functional materials, 2014-09, Vol.24 (36), p.5772-5772

2014

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Electrical Demonstration of Sn-S-Based OTS Materials From Theoretical Design for Sustainable Innovation

Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array

Ultrafast Threshold Switching Dynamics in Phase‐Change Materials

Measurement of Onset of Structural Relaxation in Melt‐Quenched Phase Change Materials

Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device

Spiking Neurons with Neural Dynamics Implemented Using Stochastic Memristors

Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors

Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

Extraction, chemical, and dual-functional memory and threshold resistive switching characteristics of Elaeodendron buchananii extract

Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Nanoscale 3D Stackable Ag-Doped HfO x ‑Based Selector Devices Fabricated through Low-Temperature Hydrogen Annealing

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes (Adv. Funct. Mater. 15/2024)

An Artificial Neuron Based on a Threshold Switching Memristor

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Optimal-Switching Adaptive Modulation for Multiuser Relay Networks with Feedback Delays

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Frequency switching leads to distinctive fast–slow behaviors in Duffing system

Redox memristors with volatile threshold switching behavior for neuromorphic computing

Optimization of multi-branch switched diversity systems

3D cross-point phase-change memory for storage-class memory

Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors

Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO x

Artificial Visual Perception Nervous System Based on Low-Dimensional Material Photoelectric Memristors

Improvement of NbO x -based threshold switching devices by implementing multilayer stacks

Memory Switching: Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology (Adv. Funct. Mater. 36/2014)

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