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Atomically controlled chemical polishing of GaN using platinum and hydrofluoric acid

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.433-435

2012

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Direct determination of a topmost atomic layer of (100) surfaces on (La0.3Sr0.7)(Al0.65Ta0.35)O3 single crystals annealed in air by high‐resolution scanning transmission electron microscopy

Surface and interface analysis, 2022-03, Vol.54 (3), p.212-217

2022

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Variation of (001) surface structures of strontium titanate single crystals caused by flash event under direct/alternative current electric fields

Ceramics international, 2024-10, Vol.50 (19), p.37366-37372

2024

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Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with S2O82−-Fe2+ based slurry

Tribology international, 2017-06, Vol.110, p.441-450

2017

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A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing

Surface & coatings technology, 2015-05, Vol.270, p.206-220

2015

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Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

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Surface morphology evolution of C-plane sapphire during multi-step thermal annealing

Surface topography metrology and properties, 2022-12, Vol.10 (4), p.45015

2022

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Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0001)

Applied surface science, 2014-07, Vol.307, p.414-427

2014

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Fe-N x /C assisted chemical-mechanical polishing for improving the removal rate of sapphire

Applied surface science, 2015-07, Vol.343, p.115-120

2015

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Preparation of a novel catalyst (SoFeIII) and its catalytic performance towards the removal rate of sapphire substrate during CMP process

Tribology international, 2018-04, Vol.120, p.99-104

2018

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Chemical Mechanical Polishing of MgO Substrate and Its Effect on Fabrication of Atomic Step-Terrace Structures on MgO Surface by Subsequent High-Temperature Annealing

ECS journal of solid state science and technology, 2022-11, Vol.11 (11), p.114005

2022

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Extended study of the atomic step-terrace structure on hexagonal SiC (0001) by chemical-mechanical planarization

Applied surface science, 2013-11, Vol.284, p.195-206

2013

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Theoretical Research and Shaking Table Test on Nominal Aspect Ratio of the Isolated Step-Terrace Structure

Buildings (Basel), 2024-07, Vol.14 (7), p.2002

2024

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High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching

Materials science forum, 2012-05, Vol.717-720, p.873-876

2012

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Surface Texture and Crystallinity Variation of ZnTe Epilayers Grown on the Step-Terrace Structure of the Sapphire Substrate

Journal of electronic materials, 2016-04, Vol.45 (4), p.2127-2132

2016

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Atomically controlled surfaces with step and terrace of β-Ga 2O 3 single crystal substrates for thin film growth

Applied surface science, 2008, Vol.254 (23), p.7838-7842

2008

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Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible

Materials science forum, 2012-05, Vol.717-720, p.573-576, Article 573

2012

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Effects of plasma treatment on evolution of surface step-terrace structure of critically cleaned c-plane sapphire substrates: An AFM study

Applied surface science, 2013-11, Vol.285, p.211-214

2013

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Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

Applied surface science, 2008-09, Vol.254 (23), p.7838-7842

2008

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Electrical Activity of Surface Steps on a Sapphire Crystal Substrate for Epitaxy

Surface investigation, x-ray, synchrotron and neutron techniques, 2018-09, Vol.12 (5), p.1018-1021

2018

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TEM Observation of 8 Deg Off-Axis 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching

Materials science forum, 2011-03, Vol.679-680, p.489-492

2011

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Investigation on the variation of the step-terrace structure on the surface of polished GaN wafer

Surfaces and interfaces, 2017-03, Vol.6, p.197-201

2017

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Finishing of 4H-SiC (0001) by Combination of Thermal Oxidation and Abrasive Polishing

Key engineering materials, 2014-08, Vol.625, p.192-195

2014

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Observation of nanostructure by scanning near-field optical microscope with small sphere probe

Science and technology of advanced materials, 2007-04, Vol.8 (3), p.181-185

2007

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Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition

Novel Aspects of Diamond, 2019, Vol.121, p.1-29

2019

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Atomically controlled chemical polishing of GaN using platinum and hydrofluoric acid

Direct determination of a topmost atomic layer of (100) surfaces on (La0.3Sr0.7)(Al0.65Ta0.35)O3 single crystals annealed in air by high‐resolution scanning transmission electron microscopy

Variation of (001) surface structures of strontium titanate single crystals caused by flash event under direct/alternative current electric fields

Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with S2O82−-Fe2+ based slurry

A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing

Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface

Surface morphology evolution of C-plane sapphire during multi-step thermal annealing

Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0001)

Fe-N x /C assisted chemical-mechanical polishing for improving the removal rate of sapphire

Preparation of a novel catalyst (SoFeIII) and its catalytic performance towards the removal rate of sapphire substrate during CMP process

Chemical Mechanical Polishing of MgO Substrate and Its Effect on Fabrication of Atomic Step-Terrace Structures on MgO Surface by Subsequent High-Temperature Annealing

Extended study of the atomic step-terrace structure on hexagonal SiC (0001) by chemical-mechanical planarization

Theoretical Research and Shaking Table Test on Nominal Aspect Ratio of the Isolated Step-Terrace Structure

High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching

Surface Texture and Crystallinity Variation of ZnTe Epilayers Grown on the Step-Terrace Structure of the Sapphire Substrate

Atomically controlled surfaces with step and terrace of β-Ga 2O 3 single crystal substrates for thin film growth

Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible

Effects of plasma treatment on evolution of surface step-terrace structure of critically cleaned c-plane sapphire substrates: An AFM study

Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

Electrical Activity of Surface Steps on a Sapphire Crystal Substrate for Epitaxy

TEM Observation of 8 Deg Off-Axis 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching

Investigation on the variation of the step-terrace structure on the surface of polished GaN wafer

Finishing of 4H-SiC (0001) by Combination of Thermal Oxidation and Abrasive Polishing

Observation of nanostructure by scanning near-field optical microscope with small sphere probe

Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition

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