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Ku- and K-band high-efficiency GaN MMIC HPA chipset for satellite communications

Electronics letters, 2019-04, Vol.55 (7), p.393-395

2019

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K-band frequency-selective limiter using an injection locked oscillator for blocker cancellation

Electronics letters, 2018-04, Vol.54 (7), p.450-452

2018

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DC-16 GHz GaAs track-and-hold amplifier using sampling rate and linearity enhancement techniques

Electronics letters, 2018-01, Vol.54 (2), p.83-85

2018

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Ka-band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back-off PAE using GaAs PHEMTS

IET microwaves, antennas & propagation, 2016-07, Vol.10 (10), p.1101-1105

2016

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Ka-band VCO with parasitic capacitance cancelling technique

Electronics letters, 2017-01, Vol.53 (1), p.38-40

2017

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Compact low-noise power amplifier design and implementation for millimetre wave frequencies

IET circuits, devices & systems, 2020-10, Vol.14 (7), p.1026-1031

2020

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45 GHz stacked-FET PA with linearising feed-forward rectifier

Electronics letters, 2016-09, Vol.52 (18), p.1535-1537

2016

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Characterisation and analytical modelling of GaN HEMT-based varactor diodes

Electronics letters, 2015-11, Vol.51 (23), p.1930-1932

2015

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Design of ultra-low noise, wideband low-noise amplifier for highly survival radar receiver

IET circuits, devices & systems, 2016-11, Vol.10 (6), p.473-480

2016

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pin photodiode in 0.15 µm CMOS

Electronics letters, 2014-08, Vol.50 (17), p.1229-1231

2014

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K-band 0/180° balanced phase shifter with dc-offset cancellation

Electronics letters, 2013-09, Vol.49 (19), p.1234-1235

2013

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High RF performance improvement using surface passivation technique of AlGaN/GaN HEMTs at K-band application

Electronics letters, 2013-08, Vol.49 (16), p.1013-1015

2013

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New compact Ka-band CPW rat-race coupler using GaAs MMIC technology

Electronics letters, 2013-09, Vol.49 (19), p.1227-1229

2013

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0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process

2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS), 2020, p.105-107

2020

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Ku- and K-band high-efficiency GaN MMIC HPA chipset for satellite communications

K-band frequency-selective limiter using an injection locked oscillator for blocker cancellation

DC-16 GHz GaAs track-and-hold amplifier using sampling rate and linearity enhancement techniques

Ka-band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back-off PAE using GaAs PHEMTS

Ka-band VCO with parasitic capacitance cancelling technique

Compact low-noise power amplifier design and implementation for millimetre wave frequencies

45 GHz stacked-FET PA with linearising feed-forward rectifier

Characterisation and analytical modelling of GaN HEMT-based varactor diodes

Design of ultra-low noise, wideband low-noise amplifier for highly survival radar receiver

pin photodiode in 0.15 µm CMOS

K-band 0/180° balanced phase shifter with dc-offset cancellation

High RF performance improvement using surface passivation technique of AlGaN/GaN HEMTs at K-band application

New compact Ka-band CPW rat-race coupler using GaAs MMIC technology

0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process

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