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Silicon Millimeter-Wave, Terahertz, and High-Speed Fiber-Optic Device and Benchmark Circuit Scaling Through the 2030 ITRS Horizon

Proceedings of the IEEE, 2017-06, Vol.105 (6), p.1087-1104

2017

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An Efficient Breakdown Characterization for D/T-RESURF SOI LDMOS Using Important Structure Parameters Selection Technique

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.2869-2875

2024

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High-efficiency single etch step apodized surface grating coupler using subwavelength structure

Laser & photonics reviews, 2014-11, Vol.8 (6), p.L93-L97

2014

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Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2861-2866

2021

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In‐field and out‐of‐field microdosimetric characterisation of a 62 MeV proton beam at CATANA

Medical physics (Lancaster), 2021-08, Vol.48 (8), p.4532-4541

2021

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Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs

IEEE transactions on nuclear science, 2019-04, Vol.66 (4), p.710-715

2019

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Bias Dependence of Total Ionizing Dose Response in UTBB FD-SOI transistors

IEEE transactions on nuclear science, 2022-12, Vol.69 (12), p.1-1

2022

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Thermal Resistance Characterization for Multifinger SOI-MOSFETs

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3626-3632

2018

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1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform

IEEE electron device letters, 2013-03, Vol.34 (3), p.357-359

2013

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Spatial Composition Grading of Binary Metal Alloy Gate Electrode for Short-Channel SOI/SON MOSFET Application

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3280-3287

2012

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An ultra-compact multimode interference coupler with a subwavelength grating slot

Laser & photonics reviews, 2013-03, Vol.7 (2), p.L12-L15

2013

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Variation of source gate workfunction on the performance of dual material gate rectangular recessed channel SOI‐MOSFET

International journal of numerical modelling, 2019-01, Vol.32 (1), p.n/a

2019

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Cascaded Ring-Resonators for Multi-Channel Optical Sensing With Reduced Temperature Sensitivity

IEEE photonics technology letters, 2016-04, Vol.28 (7), p.814-817

2016

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Analysis of Extended Pile Gate Trapezoidal Bulk FinFET

Journal of the Institution of Electronics and Telecommunication Engineers, 2021-11, Vol.67 (6), p.945-950

2021

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Prediction of RF performances of advanced MOS transistors from DC and low frequency measurements

Microwave and optical technology letters, 2018-09, Vol.60 (9), p.2256-2262

2018

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Development of CMOS-MEMS/NEMS Devices

2019

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A 0.1 to 2.7‐GHz SOI SP8T antenna switch adopting body self‐adapting bias technique for low‐loss high‐power applications

International journal of circuit theory and applications, 2018-04, Vol.46 (4), p.827-841

2018

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A Simulation Study of Hot Carrier Effects in SoI-Like Bulk Silicon nMOS Device

IEEE transactions on electron devices, 2015-01, Vol.62 (1), p.23-27

2015

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New Insight Into Total-Ionizing-Dose Effect-Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.659-666

2023

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Low-temperature electron mobility in Trigate SOI MOSFETs

IEEE electron device letters, 2006-02, Vol.27 (2), p.120-122

2006

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High-Density 4T SRAM Bitcell in 14-nm 3-D CoolCube Technology Exploiting Assist Techniques

IEEE transactions on very large scale integration (VLSI) systems, 2017-08, Vol.25 (8), p.2296-2306

2017

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28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE

IEEE microwave and wireless components letters, 2018-05, Vol.28 (5), p.446-448

2018

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X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

Journal of applied crystallography, 2013-08, Vol.46 (4), p.868-873

2013

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High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.659-673

2017

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A Monolithically Integrated Large-Scale Optical Phased Array in Silicon-on-Insulator CMOS

IEEE journal of solid-state circuits, 2018-01, Vol.53 (1), p.275-296

2018

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Silicon Millimeter-Wave, Terahertz, and High-Speed Fiber-Optic Device and Benchmark Circuit Scaling Through the 2030 ITRS Horizon

An Efficient Breakdown Characterization for D/T-RESURF SOI LDMOS Using Important Structure Parameters Selection Technique

High-efficiency single etch step apodized surface grating coupler using subwavelength structure

Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS

In‐field and out‐of‐field microdosimetric characterisation of a 62 MeV proton beam at CATANA

Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs

Bias Dependence of Total Ionizing Dose Response in UTBB FD-SOI transistors

Thermal Resistance Characterization for Multifinger SOI-MOSFETs

1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform

Spatial Composition Grading of Binary Metal Alloy Gate Electrode for Short-Channel SOI/SON MOSFET Application

An ultra-compact multimode interference coupler with a subwavelength grating slot

Variation of source gate workfunction on the performance of dual material gate rectangular recessed channel SOI‐MOSFET

Cascaded Ring-Resonators for Multi-Channel Optical Sensing With Reduced Temperature Sensitivity

Analysis of Extended Pile Gate Trapezoidal Bulk FinFET

Prediction of RF performances of advanced MOS transistors from DC and low frequency measurements

Development of CMOS-MEMS/NEMS Devices

A 0.1 to 2.7‐GHz SOI SP8T antenna switch adopting body self‐adapting bias technique for low‐loss high‐power applications

A Simulation Study of Hot Carrier Effects in SoI-Like Bulk Silicon nMOS Device

New Insight Into Total-Ionizing-Dose Effect-Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation

Low-temperature electron mobility in Trigate SOI MOSFETs

High-Density 4T SRAM Bitcell in 14-nm 3-D CoolCube Technology Exploiting Assist Techniques

28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE

X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects

A Monolithically Integrated Large-Scale Optical Phased Array in Silicon-on-Insulator CMOS

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