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Boron-doped Diamond MOSFETs with Gradual Channel Doping Density

IEEE electron device letters, 2024-07, p.1-1

2024

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Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices

IEEE electron device letters, 2022-10, Vol.43 (10), p.1609-1612

2022

Volltextzugriff (PDF)

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and f of 370 GHz

IEEE electron device letters, 2012-07, Vol.33 (7), p.988-990

2012

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Electronic Conduction Mechanisms in Insulators

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.223-230

2018

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High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

IEEE electron device letters, 2018-06, Vol.39 (6), p.811-814

2018

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Metal Contact on P-Type 4H-SiC With Low Specific Contact Resistance and Micrometer-Scale Contact Area

IEEE electron device letters, 2023-09, Vol.44 (9), p.1-1

2023

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"Cold" Tunneling Ohmic Contact With p-GaAs Nanolayer 10 nm Thick

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-7

2023

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High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs With Low-Resistive and Highly-Conformal Ohmic Contacts

IEEE transactions on electron devices, 2024-07, p.1-7

2024

Volltextzugriff (PDF)

A Machine Learning-Assisted Model for GaN Ohmic Contacts Regarding the Fabrication Processes

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2212-2219

2021

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Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.1-5

2022

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Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon

IEEE electron device letters, 2021-04, Vol.42 (4), p.497-500

2021

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Ti/Au/Al/Ni/Au Low Contact Resistance and Sharp Edge Acuity for Highly Scalable AlGaN/GaN HEMTs

IEEE electron device letters, 2019-01, Vol.40 (1), p.67-70

2019

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Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-6

2023

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Improving the Performance of Free-pGaN Deep-Ultraviolet Light-Emitting Diodes by Embedding Self-Assembled Ni Nanoparticles Between p-AlGaN/p-Electrode

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6410-6414

2023

Volltextzugriff (PDF)

High Conductivity Hydrogenated Boron and Silicon Co-Doped Diamond With 0.46 Ω·mm Ohmic Contact Resistance

IEEE electron device letters, 2024-01, Vol.45 (1), p.48-51

2024

Volltextzugriff (PDF)

Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4604-4611

2023

Volltextzugriff (PDF)

Enhanced Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Incorporating High-Reflective n-Type Electrode Made of Cr/Al

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.2992-2996

2019

Volltextzugriff (PDF)

Corrections to "Electronic Conduction Mechanisms in Insulators" [Jan 18 223-230]

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4547-4547

Wager, John F.

2020

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AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

Electronics letters, 2014-01, Vol.50 (3), p.211-212

2014

Volltextzugriff (PDF)

Low Specific Contact Resistivity of 10−3Ω·cm2 for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5773-5779

2022

Volltextzugriff (PDF)

Interesting Odd-Even Effect, Ohmic Contact, Negative Differential Resistance, and Current Stabilizer Behavior in All-Carbon Graphyne/Carbon-Chain Junctions

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2529-2535

2020

Volltextzugriff (PDF)

Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5530-5535

2022

Volltextzugriff (PDF)

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3073-3078

2022

Volltextzugriff (PDF)

Effect of inductively coupled plasma etching parameters on n-Al0.5Ga0.5N ohmic contact

IEEE photonics journal, 2024-06, p.1-7

2024

Volltextzugriff (PDF)

A Novel Analytical Model for Ohmic Contacts to Planar Devices: Theoretical Design and Experimental Verification

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.299-306

2021

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Boron-doped Diamond MOSFETs with Gradual Channel Doping Density

Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and f of 370 GHz

Electronic Conduction Mechanisms in Insulators

High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

Metal Contact on P-Type 4H-SiC With Low Specific Contact Resistance and Micrometer-Scale Contact Area

"Cold" Tunneling Ohmic Contact With p-GaAs Nanolayer 10 nm Thick

High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs With Low-Resistive and Highly-Conformal Ohmic Contacts

A Machine Learning-Assisted Model for GaN Ohmic Contacts Regarding the Fabrication Processes

Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT

Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon

Ti/Au/Al/Ni/Au Low Contact Resistance and Sharp Edge Acuity for Highly Scalable AlGaN/GaN HEMTs

Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer

Improving the Performance of Free-pGaN Deep-Ultraviolet Light-Emitting Diodes by Embedding Self-Assembled Ni Nanoparticles Between p-AlGaN/p-Electrode

High Conductivity Hydrogenated Boron and Silicon Co-Doped Diamond With 0.46 Ω·mm Ohmic Contact Resistance

Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence

Enhanced Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Incorporating High-Reflective n-Type Electrode Made of Cr/Al

Corrections to "Electronic Conduction Mechanisms in Insulators" [Jan 18 223-230]

AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

Low Specific Contact Resistivity of 10−3Ω·cm2 for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate

Interesting Odd-Even Effect, Ohmic Contact, Negative Differential Resistance, and Current Stabilizer Behavior in All-Carbon Graphyne/Carbon-Chain Junctions

Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

Effect of inductively coupled plasma etching parameters on n-Al0.5Ga0.5N ohmic contact

A Novel Analytical Model for Ohmic Contacts to Planar Devices: Theoretical Design and Experimental Verification

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