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Numerical approximations for the molecular beam epitaxial growth model based on the invariant energy quadratization method

Journal of computational physics, 2017-03, Vol.333, p.104-127

2017

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Donors and deep acceptors in β-Ga2O3

Applied physics letters, 2018-08, Vol.113 (6)

2018

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Multifunctional L10-Mn1.5Ga Films with Ultrahigh Coercivity, Giant Perpendicular Magnetocrystalline Anisotropy and Large Magnetic Energy Product

Advanced materials (Weinheim), 2012-08, Vol.24 (33), p.4547-4551

2012

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All-epitaxial, laterally structured plasmonic materials

Applied physics letters, 2022-04, Vol.120 (16)

2022

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A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage Amplification

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2725-2731

2022

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MBE grown Ga2O3 and its power device applications

Journal of crystal growth, 2013-09, Vol.378, p.591-595

2013

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Work function variation of monolayer MoS2 by nitrogen-doping

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Manipulating a beam of barium fluoride molecules using an electrostatic hexapole

New journal of physics, 2024-07, Vol.26 (7), p.73054

2024

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Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films

Nature communications, 2018-06, Vol.9 (1), p.1-8, Article 2206

2018

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Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4944-4949

2022

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Effect of Oxygen Precursors on Growth Mechanism in High-Quality β-Ga₂O₃ Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-Blind Photodetectors

IEEE sensors journal, 2024-05, Vol.24 (9), p.14109-14117

2024

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Energy-decreasing exponential time differencing Runge–Kutta methods for phase-field models

Journal of computational physics, 2022-04, Vol.454, p.110943, Article 110943

2022

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Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap

Advanced functional materials, 2018-08, Vol.28 (35), p.n/a

2018

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InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm

Applied physics letters, 2018-07, Vol.113 (5)

2018

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Epitaxial Aluminum Scandium Nitride Super High Frequency Acoustic Resonators

Journal of microelectromechanical systems, 2020-08, Vol.29 (4), p.490-498

2020

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Controllable Growth of γ-In2Se3 and β-InSe Thin Films for High-Performance Broadband Photodetectors

IEEE sensors journal, 2023-12, Vol.23 (24), p.30318-30324

2023

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Ion chemistry in premixed rich methane flames

Combustion and flame, 2019-04, Vol.202 (C), p.208-218

2019

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Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO4 by Radio‐Frequency Molecular Beam Epitaxy

physica status solidi (b), 2023-07, Vol.260 (7), p.n/a

2023

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Identification and modulation of electronic band structures of single-phase β-(AlxGa1−x)2O3 alloys grown by laser molecular beam epitaxy

Applied physics letters, 2018-07, Vol.113 (4)

2018

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High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

Applied physics letters, 2016-05, Vol.108 (19)

2016

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Energy dissipation law of the variable time-step fractional BDF2 scheme for the time fractional molecular beam epitaxial model

International journal of computer mathematics, 2024-10, Vol.101 (9-10), p.1188-1204

2024

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Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam Epitaxy

IEEE transactions on magnetics, 2022-02, Vol.58 (2), p.1-6

2022

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Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms

Physica status solidi. PSS-RRL. Rapid research letters, 2013-10, Vol.7 (10), p.699-712

Consonni, V.

2013

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Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices

IEEE journal of quantum electronics, 2022-08, Vol.58 (4), p.1-11

2022

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Fast-response solar-blind ultraviolet photodetector with a graphene/β-Ga2O3/graphene hybrid structure

Journal of alloys and compounds, 2017-01, Vol.692, p.634-638

2017

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Numerical approximations for the molecular beam epitaxial growth model based on the invariant energy quadratization method

Donors and deep acceptors in β-Ga2O3

Multifunctional L10-Mn1.5Ga Films with Ultrahigh Coercivity, Giant Perpendicular Magnetocrystalline Anisotropy and Large Magnetic Energy Product

All-epitaxial, laterally structured plasmonic materials

A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage Amplification

MBE grown Ga2O3 and its power device applications

Work function variation of monolayer MoS2 by nitrogen-doping

Manipulating a beam of barium fluoride molecules using an electrostatic hexapole

Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films

Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices

Effect of Oxygen Precursors on Growth Mechanism in High-Quality β-Ga₂O₃ Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-Blind Photodetectors

Energy-decreasing exponential time differencing Runge–Kutta methods for phase-field models

Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap

InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm

Epitaxial Aluminum Scandium Nitride Super High Frequency Acoustic Resonators

Controllable Growth of γ-In2Se3 and β-InSe Thin Films for High-Performance Broadband Photodetectors

Ion chemistry in premixed rich methane flames

Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO4 by Radio‐Frequency Molecular Beam Epitaxy

Identification and modulation of electronic band structures of single-phase β-(AlxGa1−x)2O3 alloys grown by laser molecular beam epitaxy

High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

Energy dissipation law of the variable time-step fractional BDF2 scheme for the time fractional molecular beam epitaxial model

Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam Epitaxy

Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms

Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices

Fast-response solar-blind ultraviolet photodetector with a graphene/β-Ga2O3/graphene hybrid structure

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