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Phase-Change Memory Materials by Design: A Strain Engineering Approach

Advanced materials (Weinheim), 2016-04, Vol.28 (15), p.3007-3016

2016

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Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2Te3 Superlattices Used in Interfacial Phase‐Change Memory (iPCM) Devices

Small (Weinheim an der Bergstrasse, Germany), 2018-06, Vol.14 (24), p.n/a

2018

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Thermoelectric and Thermal Properties of a (GeTe)2/Sb2Te3 Interfacial Phase‐Change Memory Device

Physica status solidi. PSS-RRL. Rapid research letters, 2021-03, Vol.15 (3), p.n/a

Nakamura, Hisao

2021

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Electric Fields and Interfacial Phase‐Change Memory Structures

Physica status solidi. PSS-RRL. Rapid research letters, 2021-03, Vol.15 (3), p.n/a

2021

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Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb2Te3 Superlattices

Physica status solidi. PSS-RRL. Rapid research letters, 2021-03, Vol.15 (3), p.n/a

2021

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Van der Waals interfacial bonding and intermixing in GeTe-Sb2Te3-based superlattices

Nano research, 2018-03, Vol.11 (3), p.1676-1686

2018

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Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb2Te3–GeTe superlattices

Chinese physics B, 2024-06, Vol.33 (7)

2024

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Layer‐Dependent Effects of Interfacial Phase‐Change Memory for an Artificial Synapse

Physica status solidi. PSS-RRL. Rapid research letters, 2022-09, Vol.16 (9), p.n/a

2022

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Local structure of [(GeTe)2/(Sb2Te3)m]n super-lattices by x-ray absorption spectroscopy

Journal of physics. D, Applied physics, 2020-09, Vol.53 (40), p.404002

2020

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Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications

Electronics (Basel), 2020-08, Vol.9 (8), p.1268

2020

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Finite Element Analysis of GeTe / Ge2Sb2Te5 Interfacial Phase Change Memory Devices

2022 20th Non-Volatile Memory Technology Symposium (NVMTS), 2022, p.1-5

2022

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Investigation on Synaptic Characteristics of Interfacial Phase Change Memory for Artificial Synapse Application

2020 International SoC Design Conference (ISOCC), 2020, p.169-170

2020

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Interfacial Resistance Characterization for Blade-Type Phase Change Random Access Memory

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.968-975

2020

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Flexible solid-solid phase change materials with high stability for thermal management

International journal of heat and mass transfer, 2023-09, Vol.211, p.124202, Article 124202

2023

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Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi₂Te₃ Thermoelectric Interfacial Layer

IEEE electron device letters, 2020-11, Vol.41 (11), p.1657-1660

2020

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Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2

Applied physics letters, 2019-02, Vol.114 (8)

2019

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Energy Bandpass Filtering in Superlattice Phase Change Memories

IEEE transactions on electron devices, 2019-09, Vol.66 (9), p.3809-3815

2019

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High thermal stability and low density variation of carbon-doped Ge2Sb2Te5 for phase-change memory application

Applied physics letters, 2014-12, Vol.105 (24)

2014

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a-C/GeTe superlattices: Effect of interfacial impedance adaptation modeling on the thermal properties

Journal of applied physics, 2023-11, Vol.134 (18)

2023

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Impact of process-induced variability on the performance and scaling of Ge2Sb2Te5 Phase-change memory device

Semiconductor science and technology, 2020-03, Vol.35 (3)

2020

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Crystallization and Resistance Behavior of MgSb/Sb Multilayer Thin Films for Memory Application

Journal of electronic materials, 2020-02, Vol.49 (2), p.980-984

2020

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Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory

Micromachines (Basel), 2019-04, Vol.10 (5), p.281

2019

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Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells

Nano futures, 2017-09, Vol.1 (2)

2017

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Advantages of GeTeN material for phase change memory applications

Journal of non-crystalline solids, 2012-09, Vol.358 (17), p.2416-2419

2012

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Impact of process-induced variability on multi-bit phase change memory devices

Microelectronics, 2022-12, Vol.130, p.105638, Article 105638

2022

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Phase-Change Memory Materials by Design: A Strain Engineering Approach

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2Te3 Superlattices Used in Interfacial Phase‐Change Memory (iPCM) Devices

Thermoelectric and Thermal Properties of a (GeTe)2/Sb2Te3 Interfacial Phase‐Change Memory Device

Electric Fields and Interfacial Phase‐Change Memory Structures

Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb2Te3 Superlattices

Van der Waals interfacial bonding and intermixing in GeTe-Sb2Te3-based superlattices

Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb2Te3–GeTe superlattices

Layer‐Dependent Effects of Interfacial Phase‐Change Memory for an Artificial Synapse

Local structure of [(GeTe)2/(Sb2Te3)m]n super-lattices by x-ray absorption spectroscopy

Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications

Finite Element Analysis of GeTe / Ge2Sb2Te5 Interfacial Phase Change Memory Devices

Investigation on Synaptic Characteristics of Interfacial Phase Change Memory for Artificial Synapse Application

Interfacial Resistance Characterization for Blade-Type Phase Change Random Access Memory

Flexible solid-solid phase change materials with high stability for thermal management

Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi₂Te₃ Thermoelectric Interfacial Layer

Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2

Energy Bandpass Filtering in Superlattice Phase Change Memories

High thermal stability and low density variation of carbon-doped Ge2Sb2Te5 for phase-change memory application

a-C/GeTe superlattices: Effect of interfacial impedance adaptation modeling on the thermal properties

Impact of process-induced variability on the performance and scaling of Ge2Sb2Te5 Phase-change memory device

Crystallization and Resistance Behavior of MgSb/Sb Multilayer Thin Films for Memory Application

Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory

Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells

Advantages of GeTeN material for phase change memory applications

Impact of process-induced variability on multi-bit phase change memory devices

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