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Implicit common-mode resonance by parasitic capacitances in LC oscillators for Ka-band satellite receiver

Journal of engineering (Stevenage, England), 2019-12, Vol.2019 (12), p.8458-8462

2019

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DC-16 GHz GaAs track-and-hold amplifier using sampling rate and linearity enhancement techniques

Electronics letters, 2018-01, Vol.54 (2), p.83-85

2018

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A 4–20 GHz, multi-watt level, fully integrated push–pull distributed power amplifier with wideband even-order harmonic suppression

IET microwaves, antennas & propagation, 2019-10, Vol.13 (13), p.2279-2283

2019

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Ka-band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back-off PAE using GaAs PHEMTS

IET microwaves, antennas & propagation, 2016-07, Vol.10 (10), p.1101-1105

2016

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Balanced MMIC QPSK modulator with low amplitude and phase errors

Electronics letters, 2014-03, Vol.50 (7), p.523-525

2014

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Analysis and design of a Q/V-band low-noise amplifier in GaAs-based 0.1 µm pHEMT technology

IET microwaves, antennas & propagation, 2016-11, Vol.10 (14), p.1500-1506

2016

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Ultra-wideband, high-dynamic range, low loss GaN HEMT mixer

Electronics letters, 2014-02, Vol.50 (4), p.295-297

2014

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Wide Bandgap Semiconductor Based Micro/Nano Devices

Seo, Jung-Hun

2019

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Wide Bandgap Based Devices: Design, Fabrication and Applications

Medjdoub, Farid

2021

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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.132-140

2011

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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Verzellesi, Giovanni

2022

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Examination of Trapping Effects on Single-Event Transients in GaN HEMTs

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1

2023

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High‐Performance n‐Type Organic Electrochemical Transistors Enabled by Aqueous Solution Processing of Amphiphilicity‐Driven Polymer Assembly

Advanced functional materials, 2022-04, Vol.32 (16), p.n/a

2022

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Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors

Journal of crystal growth, 2020-03, Vol.534, p.125511, Article 125511

2020

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Quasi-Physical Equivalent Circuit Model of RF Leakage Current in Substrate Including Temperature Dependence for GaN-HEMT on Si

IEEE transactions on microwave theory and techniques, 2023-05, Vol.71 (5), p.1-12

2023

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“Leaky Dielectric” Model for the Suppression of Dynamic R} in Carbon-Doped AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2826-2834

2017

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Performance Comparison of Au-Based and Au-Free AlGaN/GaN HEMT on Silicon

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1014-1019

2022

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Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.2996-3003

2011

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Design Space of Delta-Doped β-(AlxGa1-x)2O3/Ga2O3 High-Electron Mobility Transistors

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.69-74

2022

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Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands

IEEE transactions on microwave theory and techniques, 2023-05, Vol.71 (5), p.1-13

2023

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Reproducing GaN HEMT Kink Effect by Simulating Field-Enhanced Barrier Defect Ionization

IEEE transactions on electron devices, 2019-09, Vol.66 (9), p.3777-3783

Grupen, Matt

2019

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Electrothermal Modeling of Monolithically Integrated GaN-Based μLED Devices

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4203-4209

2024

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Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3166-3175

2013

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Analytically Modeling the Effect of Buffer Charge on the 2DEG Density in AlGaN/GaN HEMT

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1-8

2024

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A Short-Circuit Protection Circuit With Strong Noise Immunity for GaN HEMTs

IEEE transactions on power electronics, 2021-02, Vol.36 (2), p.2432-2442

2021

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Implicit common-mode resonance by parasitic capacitances in LC oscillators for Ka-band satellite receiver

DC-16 GHz GaAs track-and-hold amplifier using sampling rate and linearity enhancement techniques

A 4–20 GHz, multi-watt level, fully integrated push–pull distributed power amplifier with wideband even-order harmonic suppression

Ka-band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back-off PAE using GaAs PHEMTS

Balanced MMIC QPSK modulator with low amplitude and phase errors

Analysis and design of a Q/V-band low-noise amplifier in GaAs-based 0.1 µm pHEMT technology

Ultra-wideband, high-dynamic range, low loss GaN HEMT mixer

Wide Bandgap Semiconductor Based Micro/Nano Devices

Wide Bandgap Based Devices: Design, Fabrication and Applications

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Examination of Trapping Effects on Single-Event Transients in GaN HEMTs

High‐Performance n‐Type Organic Electrochemical Transistors Enabled by Aqueous Solution Processing of Amphiphilicity‐Driven Polymer Assembly

Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors

Quasi-Physical Equivalent Circuit Model of RF Leakage Current in Substrate Including Temperature Dependence for GaN-HEMT on Si

“Leaky Dielectric” Model for the Suppression of Dynamic R} in Carbon-Doped AlGaN/GaN HEMTs

Performance Comparison of Au-Based and Au-Free AlGaN/GaN HEMT on Silicon

Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

Design Space of Delta-Doped β-(AlxGa1-x)2O3/Ga2O3 High-Electron Mobility Transistors

Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands

Reproducing GaN HEMT Kink Effect by Simulating Field-Enhanced Barrier Defect Ionization

Electrothermal Modeling of Monolithically Integrated GaN-Based μLED Devices

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

Analytically Modeling the Effect of Buffer Charge on the 2DEG Density in AlGaN/GaN HEMT

A Short-Circuit Protection Circuit With Strong Noise Immunity for GaN HEMTs

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