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3D Cross-Point Plasmonic Nanoarchitectures Containing Dense and Regular Hot Spots for Surface-Enhanced Raman Spectroscopy Analysis

Advanced materials (Weinheim), 2016-10, Vol.28 (39), p.8695-8704

2016

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A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications

Advanced science, 2019-05, Vol.6 (10), p.1900024-n/a

2019

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3D cross-point phase-change memory for storage-class memory

Journal of physics. D, Applied physics, 2019-11, Vol.52 (47), p.473002

2019

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Solving matrix equations in one step with cross-point resistive arrays

Proceedings of the National Academy of Sciences - PNAS, 2019-03, Vol.116 (10), p.4123-4128

2019

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Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

Advanced materials technologies, 2020-01, Vol.5 (1), p.n/a

2020

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150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors

Advanced electronic materials, 2020-12, Vol.6 (12), p.n/a

2020

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HfOx‑Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

ACS nano, 2013-03, Vol.7 (3), p.2320-2325

2013

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Isogeometric mortar methods

Computer methods in applied mechanics and engineering, 2015-02, Vol.284, p.292-319

2015

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Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design

IEEE transactions on electron devices, 2015-12, Vol.62 (12), p.4022-4028

2015

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Demonstration of Convolution Kernel Operation on Resistive Cross-Point Array

IEEE electron device letters, 2016-07, Vol.37 (7), p.870-873

2016

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Cell Design Considerations for Ovonic Threshold Switch-Based 3-D Cross-Point Array

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-8

2023

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Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1394-1406

2020

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Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array

IEEE electron device letters, 2015-07, Vol.36 (7), p.681-683

2015

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Selector Devices: Voltage‐Tunable Ultra‐Steep Slope Atomic Switch with Selectivity over 1010 (Small 29/2021)

Small (Weinheim an der Bergstrasse, Germany), 2021-07, Vol.17 (29), p.n/a

2021

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Cross Point Alignment for All AF Pixels in CMOS Image Sensors

IEEE sensors journal, 2023-10, Vol.23 (20), p.1-1

2023

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Design of Single‐Molecule Multiferroics for Efficient Ultrahigh‐Density Nonvolatile Memories

Advanced science, 2019-01, Vol.6 (1), p.1801572-n/a

2019

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NonLocal Optimized Schwarz Method for the Helmholtz Equation with Physical Boundaries

SIAM journal on mathematical analysis, 2023-01, Vol.55 (6), p.7490-7512

Claeys, Xavier

2023

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Ultrafast and thermally stable ternary Ge0.33SexSy ovonic threshold switching selector using magnetron sputtering

Journal of alloys and compounds, 2024-02, Vol.973, p.172863, Article 172863

2024

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Controllable coexistence of threshold and non-volatile crosspoint memory for highly linear synaptic device applications

Journal of physics. D, Applied physics, 2023-07, Vol.56 (28), p.285102

2023

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Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory

Advanced materials (Weinheim), 2015-01, Vol.27 (1), p.59-64

2015

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A novel approach to enhancing performance and endurance in GeS2 OTS devices using amorphous carbon doped W2N electrodes

Journal of alloys and compounds, 2025-01, Vol.1010, p.177102, Article 177102

2025

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3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications

Advanced electronic materials, 2019-07, Vol.5 (7), p.n/a

2019

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Accurate Weight Update in an Electrochemical Random‐Access Memory Based Cross‐Point Array Using Channel‐High Half‐Bias Scheme for Deep Learning Accelerator

Advanced electronic materials, 2023-12, Vol.9 (12), p.n/a

2023

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Correlated Oxide Selector for Cross-Point Embedded Non-Volatile Memory

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.916-921

2024

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Non-local variant of the optimised Schwarz method for arbitrary non-overlapping subdomain partitions

ESAIM: Mathematical Modelling and Numerical Analysis, 2021-03, Vol.55 (2), p.429-448

Claeys, Xavier

2021

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3D Cross-Point Plasmonic Nanoarchitectures Containing Dense and Regular Hot Spots for Surface-Enhanced Raman Spectroscopy Analysis

A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications

3D cross-point phase-change memory for storage-class memory

Solving matrix equations in one step with cross-point resistive arrays

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors

HfOx‑Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

Isogeometric mortar methods

Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design

Demonstration of Convolution Kernel Operation on Resistive Cross-Point Array

Cell Design Considerations for Ovonic Threshold Switch-Based 3-D Cross-Point Array

Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond

Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array

Selector Devices: Voltage‐Tunable Ultra‐Steep Slope Atomic Switch with Selectivity over 1010 (Small 29/2021)

Cross Point Alignment for All AF Pixels in CMOS Image Sensors

Design of Single‐Molecule Multiferroics for Efficient Ultrahigh‐Density Nonvolatile Memories

NonLocal Optimized Schwarz Method for the Helmholtz Equation with Physical Boundaries

Ultrafast and thermally stable ternary Ge0.33SexSy ovonic threshold switching selector using magnetron sputtering

Controllable coexistence of threshold and non-volatile crosspoint memory for highly linear synaptic device applications

Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory

A novel approach to enhancing performance and endurance in GeS2 OTS devices using amorphous carbon doped W2N electrodes

3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications

Accurate Weight Update in an Electrochemical Random‐Access Memory Based Cross‐Point Array Using Channel‐High Half‐Bias Scheme for Deep Learning Accelerator

Correlated Oxide Selector for Cross-Point Embedded Non-Volatile Memory

Non-local variant of the optimised Schwarz method for arbitrary non-overlapping subdomain partitions

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