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An Online Junction Temperature Estimating Method for SiC MOSFETs Based on Steady-State Features and GPR

IEEE transactions on industrial electronics (1982), 2024-10, Vol.71 (10), p.13299-13309

2024

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Testing silicon photonic Mach–Zehnder modulators versus total ionizing dose

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2024-09, Vol.1066, p.169645, Article 169645

2024

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Silicon heterojunction solar cells: Excellent candidate for low light illuminations

Solar energy materials and solar cells, 2024-08, Vol.274, p.113001, Article 113001

2024

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Light‐Induced Dynamic Activation of Copper/Silicon Interface for Highly Selective Carbon Dioxide Reduction

Angewandte Chemie, 2024-08, Vol.136 (33), p.n/a

2024

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Light‐Induced Dynamic Activation of Copper/Silicon Interface for Highly Selective Carbon Dioxide Reduction

Angewandte Chemie International Edition, 2024-08, Vol.63 (33), p.e202403333-n/a

International ed. in English, 2024

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Degradation in Electrothermal Characteristics and Failure Mechanism of SiC JBS With Different Die Attach Materials Under 300 ∘C Power Cycle Stress

IEEE journal of emerging and selected topics in power electronics, 2024-08, Vol.12 (4), p.3619-3628

2024

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Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga2O3 Heterojunction by Edge Termination Optimization

IEEE electron device letters, 2024-08, Vol.45 (8), p.1421-1424

2024

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Influence of inverted pyramid texturization on front metallization and performance of crystalline silicon solar cells

Solar energy materials and solar cells, 2024-08, Vol.272, p.112919, Article 112919

2024

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Online Junction Temperature Extraction for Cascode GaN Devices Based on Turn-On Delay

IEEE transactions on power electronics, 2024-08, Vol.39 (8), p.10250-10260

2024

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1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm2)

IEEE electron device letters, 2024-08, Vol.45 (8), p.1492-1495

2024

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Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode

IEEE electron device letters, 2024-08, Vol.45 (8), p.1405-1408

2024

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Modeling of Electrostatics and Currents in a Forward-Biased p-n Junction

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4489-4497

2024

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Failure mechanism analysis of 1.2 kV SiC MOSFETs under low-temperature storage, power cycling, and short-circuit interactions

IEEE journal of emerging and selected topics in power electronics, 2024-07, p.1-1

2024

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Raman spectroscopy and photoluminescence study of PN junction p-graphene/n-GaAs

The Journal of chemical physics, 2024-07, Vol.161 (4)

2024

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Silicon-based planar devices for narrow-band near-infrared photodetection using Tamm plasmons

Nanophotonics (Berlin, Germany), 2024-07, Vol.13 (16), p.2961-2970

2024

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Short-circuit Dynamic Model of SiC MOSFET Considering Failure Modes

IEEE transactions on power electronics, 2024-07, p.1-13

2024

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High Resolution Metal-Oxide-4H-SiC Radiation Detectors: A Review

IEEE transactions on nuclear science, 2024-07, p.1-1

2024

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Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes with Enhanced Current Capability and Electroluminescence Phenomenon

IEEE electron device letters, 2024-07, p.1-1

2024

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Magnetic field enhanced critical current in Ge–Si nanowire Josephson junctions

Applied physics letters, 2024-07, Vol.125 (1)

2024

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Analysis of Negative Capacitance Source Pocket Double-Gate TFET with Steep Subthreshold and High ON–OFF Ratio

Journal of electronic materials, 2024-07, Vol.53 (7), p.3861-3869

2024

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Asymmetric Early Leakage Failure in Bi-Directional SCR ESD Protection Device in BCD Technology

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4050-4057

2024

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Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

Journal of instrumentation, 2024-07, Vol.19 (7), p.P07022

2024

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A 20 Gb/s CMOS Single-Chip 850 nm Optical Receiver

Journal of lightwave technology, 2024-07, Vol.42 (13), p.4525-4530

2024

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Improvement Spectral Responsivity of TiO2 Nanoparticles via Pulsed Laser Deposition Deposited on Silicon Nanostructures

SILICON, 2024-07, Vol.16 (10), p.4301-4316

2024

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Self-Powered Solar-Blind Photodetector With Low Dark Current and Ultrahigh On/Off Ratio Based on Vertically Aligned Si/SiC Nanowire Arrays p-n Heterojunction

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4173-4179

2024

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An Online Junction Temperature Estimating Method for SiC MOSFETs Based on Steady-State Features and GPR

Testing silicon photonic Mach–Zehnder modulators versus total ionizing dose

Silicon heterojunction solar cells: Excellent candidate for low light illuminations

Light‐Induced Dynamic Activation of Copper/Silicon Interface for Highly Selective Carbon Dioxide Reduction

Light‐Induced Dynamic Activation of Copper/Silicon Interface for Highly Selective Carbon Dioxide Reduction

Degradation in Electrothermal Characteristics and Failure Mechanism of SiC JBS With Different Die Attach Materials Under 300 ∘C Power Cycle Stress

Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga2O3 Heterojunction by Edge Termination Optimization

Influence of inverted pyramid texturization on front metallization and performance of crystalline silicon solar cells

Online Junction Temperature Extraction for Cascode GaN Devices Based on Turn-On Delay

1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm2)

Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode

Modeling of Electrostatics and Currents in a Forward-Biased p-n Junction

Failure mechanism analysis of 1.2 kV SiC MOSFETs under low-temperature storage, power cycling, and short-circuit interactions

Raman spectroscopy and photoluminescence study of PN junction p-graphene/n-GaAs

Silicon-based planar devices for narrow-band near-infrared photodetection using Tamm plasmons

Short-circuit Dynamic Model of SiC MOSFET Considering Failure Modes

High Resolution Metal-Oxide-4H-SiC Radiation Detectors: A Review

Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes with Enhanced Current Capability and Electroluminescence Phenomenon

Magnetic field enhanced critical current in Ge–Si nanowire Josephson junctions

Analysis of Negative Capacitance Source Pocket Double-Gate TFET with Steep Subthreshold and High ON–OFF Ratio

Asymmetric Early Leakage Failure in Bi-Directional SCR ESD Protection Device in BCD Technology

Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

A 20 Gb/s CMOS Single-Chip 850 nm Optical Receiver

Improvement Spectral Responsivity of TiO2 Nanoparticles via Pulsed Laser Deposition Deposited on Silicon Nanostructures

Self-Powered Solar-Blind Photodetector With Low Dark Current and Ultrahigh On/Off Ratio Based on Vertically Aligned Si/SiC Nanowire Arrays p-n Heterojunction

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