UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Nanoscale resistive switching memory devices: a review

Nanotechnology, 2019-08, Vol.30 (35), p.352003

2019

Volltextzugriff (PDF)

In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM

IEEE transactions on magnetics, 2017-11, Vol.53 (11), p.1-4

2017

Volltextzugriff (PDF)

Life-time degradation of STT-MRAM by self-heating effect with TDDB model

Solid-state electronics, 2020-11, Vol.173, p.107878, Article 107878

2020

Volltextzugriff (PDF)

Magnetic stray fields in nanoscale magnetic tunnel junctions

Journal of physics. D, Applied physics, 2020-01, Vol.53 (4), p.44001

2020

Volltextzugriff (PDF)

A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C

IEEE journal of solid-state circuits, 2024-04, Vol.59 (4), p.1283-1292

2024

Volltextzugriff (PDF)

Dimensional scaling effects on critical current density and magnetization switching in CoFeB-based magnetic tunnel junction

Journal of physics. D, Applied physics, 2024-05, Vol.57 (18), p.185002

2024

Volltextzugriff (PDF)

Magnetoresistive Random Access Memory

Proceedings of the IEEE, 2016-10, Vol.104 (10), p.1796-1830

2016

Volltextzugriff (PDF)

Computing-in-Memory with Enhanced STT-MRAM Readout Margin

IEEE transactions on magnetics, 2023-11, Vol.59 (11), p.1-1

2023

Volltextzugriff (PDF)

APPcache+: An STT-MRAM based Approximate Cache System with Low Power and Long Lifetime

IEEE transactions on computer-aided design of integrated circuits and systems, 2023-11, Vol.42 (11), p.1-1

2023

Volltextzugriff (PDF)

Computing in Memory With Spin-Transfer Torque Magnetic RAM

IEEE transactions on very large scale integration (VLSI) systems, 2018-03, Vol.26 (3), p.470-483

2018

Volltextzugriff (PDF)

Fast Writing Strategy of STT-MRAM With Pipeline Architecture

IEEE transactions on magnetics, 2022-08, Vol.58 (8), p.1-5

2022

Volltextzugriff (PDF)

Complimentary Polarizers STT-MRAM (CPSTT) for On-Chip Caches

IEEE electron device letters, 2013-02, Vol.34 (2), p.232-234

2013

Volltextzugriff (PDF)

Power-aware Quantization in Analog In-Memory Computing with STT-MRAM Macro

IEEE transactions on magnetics, 2023-11, Vol.59 (11), p.1-1

2023

Volltextzugriff (PDF)

Designing Efficient and High-Performance AI Accelerators With Customized STT-MRAM

IEEE transactions on very large scale integration (VLSI) systems, 2021-10, Vol.29 (10), p.1730-1742

2021

Volltextzugriff (PDF)

A low‐power charge‐based integrate‐and‐fire circuit for binarized‐spiking neural network

International journal of circuit theory and applications, 2023-07, Vol.51 (7), p.3404-3414

2023

Volltextzugriff (PDF)

Ultra-Fast Perpendicular Spin-Orbit Torque MRAM

IEEE transactions on magnetics, 2018-04, Vol.54 (4), p.1-4

2018

Volltextzugriff (PDF)

Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions With Perpendicular Anisotropy

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.581-587

2021

Volltextzugriff (PDF)

Union Bound Analysis for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM) With Channel Quantization

IEEE transactions on magnetics, 2022-02, Vol.58 (2), p.1-5

2022

Volltextzugriff (PDF)

Multi-Retention STT-MRAM Architectures for IoT: Evaluating the Impact of Retention Levels and Memory Mapping Schemes

IEEE access, 2024-01, Vol.12, p.1-1

2024

Volltextzugriff (PDF)

Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- \mu A Sensing Resolution, and 17.5-nS Read Access Time

IEEE journal of solid-state circuits, 2019-04, Vol.54 (4), p.1029-1038

2019

Volltextzugriff (PDF)

AC-DIMM: associative computing with STT-MRAM

Proceedings of the 40th Annual International Symposium on Computer Architecture, 2013, p.189-200

2013

Volltextzugriff (PDF)

Micromagnetic modeling of double spin-torque magnetic tunnel junction devices

Physica. B, Condensed matter, 2024-09, Vol.688, p.416124, Article 416124

2024

Volltextzugriff (PDF)

In-Memory Processing on the Spintronic CRAM: From Hardware Design to Application Mapping

IEEE transactions on computers, 2019-08, Vol.68 (8), p.1159-1173

2019

Volltextzugriff (PDF)

Reconfigurable Codesign of STT-MRAM Under Process Variations in Deeply Scaled Technology

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1769-1777

2015

Volltextzugriff (PDF)

A Survey of Software Techniques for Using Non-Volatile Memories for Storage and Main Memory Systems

IEEE transactions on parallel and distributed systems, 2016-05, Vol.27 (5), p.1537-1550

2016

Volltextzugriff (PDF)

1 – 25 von 667

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(274)
Mit Volltextzugriff
(529)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

Englisch
(667)
Japanisch
(3)

Erscheinungsjahr

n.n

Thema

Science & Technology
(511)
Technology
(495)
Stt-Mram
(457)
Engineering
(437)
Engineering, Electrical & Electronic
(429)
Random Access Memory
(307)
Magnetic Tunneling
(282)
Computer Science
(192)
Switches
(179)
Physics
(175)
Physical Sciences
(168)
Physics, Applied
(156)
Computer Science, Hardware & Architecture
(142)
Resistance
(142)
Torque
(131)
Tunnel Junctions
(110)
Transistors
(105)
Computer Architecture
(100)
Nonvolatile Memory
(99)
Reliability
(98)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 7 Tagen
(1)
... seit 90 Tagen
(6)

Menü

Weitere Dienste

Einstellungen

Nanoscale resistive switching memory devices: a review

In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM

Life-time degradation of STT-MRAM by self-heating effect with TDDB model

Magnetic stray fields in nanoscale magnetic tunnel junctions

A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C

Dimensional scaling effects on critical current density and magnetization switching in CoFeB-based magnetic tunnel junction

Magnetoresistive Random Access Memory

Computing-in-Memory with Enhanced STT-MRAM Readout Margin

APPcache+: An STT-MRAM based Approximate Cache System with Low Power and Long Lifetime

Computing in Memory With Spin-Transfer Torque Magnetic RAM

Fast Writing Strategy of STT-MRAM With Pipeline Architecture

Complimentary Polarizers STT-MRAM (CPSTT) for On-Chip Caches

Power-aware Quantization in Analog In-Memory Computing with STT-MRAM Macro

Designing Efficient and High-Performance AI Accelerators With Customized STT-MRAM

A low‐power charge‐based integrate‐and‐fire circuit for binarized‐spiking neural network

Ultra-Fast Perpendicular Spin-Orbit Torque MRAM

Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions With Perpendicular Anisotropy

Union Bound Analysis for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM) With Channel Quantization

Multi-Retention STT-MRAM Architectures for IoT: Evaluating the Impact of Retention Levels and Memory Mapping Schemes

Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- \mu A Sensing Resolution, and 17.5-nS Read Access Time

AC-DIMM: associative computing with STT-MRAM

Micromagnetic modeling of double spin-torque magnetic tunnel junction devices

In-Memory Processing on the Spintronic CRAM: From Hardware Design to Application Mapping

Reconfigurable Codesign of STT-MRAM Under Process Variations in Deeply Scaled Technology

A Survey of Software Techniques for Using Non-Volatile Memories for Storage and Main Memory Systems

Suchergebnisse filtern