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Beyond 11% efficient Cu2ZnSn(Se,S)4 thin film solar cells by cadmium alloying

Solar energy materials and solar cells, 2018-01, Vol.174, p.494-498

2018

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Cu2ZnSn(S, Se)4 solar cell with slight band tailing states achieves 11.83% efficiency by selenizing sputtered Cu–Zn–Sn–S precursor

Journal of power sources, 2020-12, Vol.479, p.228747, Article 228747

2020

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The effects of selenium content on Cu(InGa)Se2 thin film solar cells by sputtering from quaternary target with Se-free post annealing

Vacuum, 2017-03, Vol.137, p.205-208

2017

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Solar Cells: Over 14% Efficiency of Directly Sputtered Cu(In,Ga)Se2 Absorbers without Postselenization by Post‐Treatment of Alkali Metals (Adv. Energy Mater. 13/2017)

Advanced energy materials, 2017-07, Vol.7 (13), p.n/a

2017

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Cu2ZnSnSSe4 solar cells with 9.6% efficiency via selenizing Cu-Zn-Sn-S precursor sputtered from a quaternary target

Solar energy materials and solar cells, 2018-01, Vol.174, p.42-49

2018

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Efficient Cu2ZnSn(Se,S)4 solar cells with 79% fill factor using two-step annealing

Solar energy materials and solar cells, 2020-09, Vol.215, p.110682, Article 110682

2020

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Above 15% Efficient Directly Sputtered CIGS Solar Cells Enabled by a Modified Back-Contact Interface

ACS applied materials & interfaces, 2021-10, Vol.13 (41), p.49414-49422

2021

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CIGS absorbing layers prepared by RF magnetron sputtering from a single quaternary target

Ceramics international, 2016-10, Vol.42 (13), p.14543-14547

2016

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Influences of Ga concentration on performances of CuInGaSe2 cells fabricated by sputtering-based method with ceramic quaternary target

Ceramics international, 2019-09, Vol.45 (13), p.16405-16410

2019

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Over 14% Efficiency of Directly Sputtered Cu(In,Ga)Se2 Absorbers without Postselenization by Post‐Treatment of Alkali Metals

Advanced energy materials, 2017-07, Vol.7 (13), p.n/a

2017

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Cu2ZnSnS4 films with different preferred orientations prepared by pulsed DC magnetron sputtering from a quaternary ceramic target

Materials letters, 2018-02, Vol.213, p.241-244

2018

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Effect of S/(S+Se) ratio during the annealing process on the performance of Cu2ZnSn(S,Se)4 solar cells prepared by sputtering from a quaternary target

Solar energy materials and solar cells, 2019-12, Vol.203, p.110167, Article 110167

2019

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Na-induced efficiency boost for Se-deficient Cu(In,Ga)Se2 solar cells

Progress in photovoltaics, 2015-11, Vol.23 (11), p.1621-1629

2015

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Effects of annealing atmosphere on the performance of Cu(InGa)Se2 films sputtered from quaternary targets

Royal Society open science, 2020-10, Vol.7 (10), p.200662-200662

2020

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Room temperature pulsed-DC sputtering deposition process for CIGS absorber layer: Material and device characterizations

Thin solid films, 2018-08, Vol.660, p.175-179

2018

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Direct current magnetron sputtered Cu2ZnSnS4 thin films using a ceramic quaternary target

Journal of alloys and compounds, 2017-12, Vol.727, p.1115-1125

2017

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Gradient band gap CZTSSe prepared via sputtering from quaternary ceramic targets followed with annealing under different atmospheres

Solar energy, 2023-07, Vol.259, p.328-337

2023

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Influence of hydrogen sulfide annealing on copper–zinc–tin–sulfide solar cells sputtered from a quaternary compound target

Thin solid films, 2015-05, Vol.582, p.233-238

2015

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Fabrication of Cu2ZnSnS4 thin films using a ceramic quaternary target

Vacuum, 2014-03, Vol.101, p.146-150

2014

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Fabrication and Characterization of CuInGaSe Thin Films Deposited on Silicon and Quartz Substrates Using One-Step Sputtering

SILICON, 2024-02, Vol.16 (3), p.1253-1263

2024

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Improving the lateral homogeneity of Cu(In, Ga)Se2 layers fabricated by RF magnetron sputtering from a quaternary ceramic target

Ceramics international, 2018-12, Vol.44 (17), p.21928-21932

2018

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Influence of H2Se concentration on Se-rich CZTSSe absorbers sputtered with a ceramic quaternary target

Ceramics international, 2020-06, Vol.46 (9), p.13704-13710

2020

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Smooth and highly-crystalline Ag-doped CIGS films sputtered from quaternary ceramic targets

Ceramics international, 2021-01, Vol.47 (2), p.2288-2293

2021

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Compositional disparity in Cu2ZnSnS4 (CZTS) thin film deposited by RF-sputtering from a single quaternary compound target

Materials letters, 2018-06, Vol.221, p.201-205

2018

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Influence of a Precursor Film with a Copper Gradient on the Properties of a Copper Indium Gallium Selenide Solar Cell

Coatings (Basel), 2022-09, Vol.12 (9), p.1358

2022

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Beyond 11% efficient Cu2ZnSn(Se,S)4 thin film solar cells by cadmium alloying

Cu2ZnSn(S, Se)4 solar cell with slight band tailing states achieves 11.83% efficiency by selenizing sputtered Cu–Zn–Sn–S precursor

The effects of selenium content on Cu(InGa)Se2 thin film solar cells by sputtering from quaternary target with Se-free post annealing

Solar Cells: Over 14% Efficiency of Directly Sputtered Cu(In,Ga)Se2 Absorbers without Postselenization by Post‐Treatment of Alkali Metals (Adv. Energy Mater. 13/2017)

Cu2ZnSnSSe4 solar cells with 9.6% efficiency via selenizing Cu-Zn-Sn-S precursor sputtered from a quaternary target

Efficient Cu2ZnSn(Se,S)4 solar cells with 79% fill factor using two-step annealing

Above 15% Efficient Directly Sputtered CIGS Solar Cells Enabled by a Modified Back-Contact Interface

CIGS absorbing layers prepared by RF magnetron sputtering from a single quaternary target

Influences of Ga concentration on performances of CuInGaSe2 cells fabricated by sputtering-based method with ceramic quaternary target

Over 14% Efficiency of Directly Sputtered Cu(In,Ga)Se2 Absorbers without Postselenization by Post‐Treatment of Alkali Metals

Cu2ZnSnS4 films with different preferred orientations prepared by pulsed DC magnetron sputtering from a quaternary ceramic target

Effect of S/(S+Se) ratio during the annealing process on the performance of Cu2ZnSn(S,Se)4 solar cells prepared by sputtering from a quaternary target

Na-induced efficiency boost for Se-deficient Cu(In,Ga)Se2 solar cells

Effects of annealing atmosphere on the performance of Cu(InGa)Se2 films sputtered from quaternary targets

Room temperature pulsed-DC sputtering deposition process for CIGS absorber layer: Material and device characterizations

Direct current magnetron sputtered Cu2ZnSnS4 thin films using a ceramic quaternary target

Gradient band gap CZTSSe prepared via sputtering from quaternary ceramic targets followed with annealing under different atmospheres

Influence of hydrogen sulfide annealing on copper–zinc–tin–sulfide solar cells sputtered from a quaternary compound target

Fabrication of Cu2ZnSnS4 thin films using a ceramic quaternary target

Fabrication and Characterization of CuInGaSe Thin Films Deposited on Silicon and Quartz Substrates Using One-Step Sputtering

Improving the lateral homogeneity of Cu(In, Ga)Se2 layers fabricated by RF magnetron sputtering from a quaternary ceramic target

Influence of H2Se concentration on Se-rich CZTSSe absorbers sputtered with a ceramic quaternary target

Smooth and highly-crystalline Ag-doped CIGS films sputtered from quaternary ceramic targets

Compositional disparity in Cu2ZnSnS4 (CZTS) thin film deposited by RF-sputtering from a single quaternary compound target

Influence of a Precursor Film with a Copper Gradient on the Properties of a Copper Indium Gallium Selenide Solar Cell

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