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Dictionary of Computer Vision and Image Processing, 2005, p.1-5

2005

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(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVD

Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47

2001

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(0?0?1) Co^sub 2^Z filled random Co^sub 2^Z powder: A lightweight and broadband with enhanced electromagnetic wave absorption properties

Materials letters, 2018-02, Vol.212, p.275

2018

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(0 0 1) Ideal-surface band structure for the series of Cu-based A I B III C 2 VI chalcopyrites

The Journal of physics and chemistry of solids, 2007, Vol.68 (1), p.1-9

2007

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The (001) surface and morphology of thin Fe3O4 layers grown by O2-assisted molecular beam epitaxy

Surface science, 2001-07, Vol.486 (1-2), p.73-81

2001

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(0 0 1) V surface structures analysed by RHEED and STM

Surface science, 2001-02, Vol.473 (3), p.172-182

2001

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0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

Electronics letters, 2013-05, Vol.49 (11), p.692-694

2013

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0.006wt.%Ag-Doped Sb2O3 Nanofilms with Various Thickness: Morphological and optical properties

Journal of physics. Conference series, 2019-09, Vol.1294 (2), p.22005

2019

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A 0.01―8-GHz (12.5 Gb/s) 4 x 4 CMOS Switch Matrix

IEEE transactions on microwave theory and techniques, 2012-02, Vol.60 (2), p.381-386

2012

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A 0.013 mm2, 5 μW, DC-Coupled Neural Signal Acquisition IC With 0.5 V Supply

IEEE journal of solid-state circuits, 2012, Vol.47 (1), p.232-243

2012

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0.013 mm2, kHz-to-GHz-bandwidth, third-order all-pole lowpass filter with 0.52-to-1.11 pW/pole/Hz efficiency

Electronics letters, 2013-10, Vol.49 (21), p.1340-1342

2013

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A 0.016-mm2 144-μW Three-Stage Amplifier Capable of Driving 1-to-15 nF Capacitive Load With >0.95-MHz GBW

IEEE journal of solid-state circuits, 2013, Vol.48 (2), p.527-540

2013

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A 0.018% THD+N, 88-dB PSRR PWM Class-D Amplifier for Direct Battery Hookup

IEEE journal of solid-state circuits, 2012-02, Vol.47 (2), p.454-463

2012

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A 0.02-mm2 9-Bit 50-MS/s Cyclic ADC in 90-nm Digital CMOS Technology

IEEE journal of solid-state circuits, 2010-03, Vol.45 (3), p.610-619

2010

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The 0/02 ratio and eddy mixing at heights from 85 km to the turbopause

Journal of atmospheric and terrestrial physics, 1986, Vol.48 (6), p.563-571

GROVES, G. V

1986

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0. 04 Hz relative optical-frequency stability in a 1. 5. mu. m distributed-Bragg-reflector (DBR) laser

IEEE photonics technology letters, 1989-12, Vol.1:12

1989

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0.07 mm2, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

Electronics letters, 2012, Vol.48 (10), p.552-554

2012

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0. 073% (95% C. L. ) upper limit on 17keV neutrino admixture

AIP Conference Proceedings (American Institute of Physics); (United States), 1992, Vol.272:1

Ohshima, T.

1992

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A 0.08μm2-sized 8F2 Stack DRAM cell for multi-gigabit DRAM

2002

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[0 1 0] dislocations in the complex metallic alloy ξ ′-Al–Pd–Mn

Acta materialia, 2004-03, Vol.52 (5), p.1297-1304

2004

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A 0.1-1.5 GHz 8-bit Inverter-Based Digital-to-Phase Converter Using Harmonic Rejection

IEEE journal of solid-state circuits, 2013-11, Vol.48 (11), p.2681-2692

2013

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A 0.1-1 GHz CMOS Variable Gain Amplifier Using Wideband Negative Capacitance

IEICE transactions on electronics, 2009, Vol.E92-C (10), p.1311-1314

2009

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A 0.1-12 GHz fully differential CMOS distributed amplifier employing a feedforward distortion cancellation technique

2004

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A 0.1-20 GHz Low-Power Self-Biased Resistive-Feedback LNA in 90 nm Digital CMOS

IEEE microwave and wireless components letters, 2009-05, Vol.19 (5), p.323-325

2009

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A 0.1-23-GHz SiGe BiCMOS analog multiplier and mixer based on attenuation-compensation technique

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers, 2004, p.417-420

2004

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(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVD

(0?0?1) Co^sub 2^Z filled random Co^sub 2^Z powder: A lightweight and broadband with enhanced electromagnetic wave absorption properties

(0 0 1) Ideal-surface band structure for the series of Cu-based A I B III C 2 VI chalcopyrites

The (001) surface and morphology of thin Fe3O4 layers grown by O2-assisted molecular beam epitaxy

(0 0 1) V surface structures analysed by RHEED and STM

0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

0.006wt.%Ag-Doped Sb2O3 Nanofilms with Various Thickness: Morphological and optical properties

A 0.01―8-GHz (12.5 Gb/s) 4 x 4 CMOS Switch Matrix

A 0.013 mm2, 5 μW, DC-Coupled Neural Signal Acquisition IC With 0.5 V Supply

0.013 mm2, kHz-to-GHz-bandwidth, third-order all-pole lowpass filter with 0.52-to-1.11 pW/pole/Hz efficiency

A 0.016-mm2 144-μW Three-Stage Amplifier Capable of Driving 1-to-15 nF Capacitive Load With >0.95-MHz GBW

A 0.018% THD+N, 88-dB PSRR PWM Class-D Amplifier for Direct Battery Hookup

A 0.02-mm2 9-Bit 50-MS/s Cyclic ADC in 90-nm Digital CMOS Technology

The 0/02 ratio and eddy mixing at heights from 85 km to the turbopause

0. 04 Hz relative optical-frequency stability in a 1. 5. mu. m distributed-Bragg-reflector (DBR) laser

0.07 mm2, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

0. 073% (95% C. L. ) upper limit on 17keV neutrino admixture

A 0.08μm2-sized 8F2 Stack DRAM cell for multi-gigabit DRAM

[0 1 0] dislocations in the complex metallic alloy ξ ′-Al–Pd–Mn

A 0.1-1.5 GHz 8-bit Inverter-Based Digital-to-Phase Converter Using Harmonic Rejection

A 0.1-1 GHz CMOS Variable Gain Amplifier Using Wideband Negative Capacitance

A 0.1-12 GHz fully differential CMOS distributed amplifier employing a feedforward distortion cancellation technique

A 0.1-20 GHz Low-Power Self-Biased Resistive-Feedback LNA in 90 nm Digital CMOS

A 0.1-23-GHz SiGe BiCMOS analog multiplier and mixer based on attenuation-compensation technique

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