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Vacuum-Free Liquid-Metal-Printed 2D Indium–Tin Oxide Thin-Film Transistor for Oxide Inverters

ACS nano, 2022-02, Vol.16 (2), p.3280-3289

2022

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The Effect of Drain Bias Stress on the Instability of Turned-OFF Amorphous HfInZnO Thin-Film Transistors Under Light Irradiation

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.153-158

2017

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Effect of aluminum addition to solution-derived amorphous indium zinc oxide thin film for an oxide thin film transistors

Microelectronic engineering, 2013-09, Vol.109, p.189-192

2013

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Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors

ACS applied materials & interfaces, 2018-08, Vol.10 (31), p.25878-25901

2018

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Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-5

2023

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Active‐Matrix GaN µ‐LED Display Using Oxide Thin‐Film Transistor Backplane and Flip Chip LED Bonding

Advanced electronic materials, 2019-03, Vol.5 (3), p.n/a

2019

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Surface engineering of Al2O3 dielectric layer for all-sputtered-oxide transparent and flexible a-IGZO thin film transistor

Ceramics international, 2024-11, Vol.50 (21), p.43763-43771

2024

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26-4: Highly Oxidation-Resistant Mo-Alloys for Metal-Oxide TFT Metallization

SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.330-332

2016

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58.2: High-Performance Large-Size OLED Tv with Ultra Hd Resolution

SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.869-871

2015

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21.1: Invited Paper: High Throughput MOTFT with Organic Etch-Stopper and SiNx Gate Insulator

SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.296-299

2015

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Effect of Humidity on Properties of Aqueous-processed Tb-Doped Indium Oxide Thin-Film Transistors

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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p-Type transparent amorphous oxide thin-film transistors using low-temperature solution-processed nickel oxide

Journal of alloys and compounds, 2019-10, Vol.806, p.40-51

2019

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Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2gate insulator

Nanotechnology, 2021-06, Vol.32 (25)

2021

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39.2: Invited Paper: Recent Progress of Oxide-Semiconductor-Based P-channel TFTs

SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.591-594

Nomura, Kenji

2015

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Effect of sulfur incorporation on solution-processed ZTO thin-film transistors

Journal of the Korean Physical Society, 2015-04, Vol.66 (7), p.1144-1148

2015

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High-performance ITO/a-IGZO heterostructure TFTs enabled by thickness-dependent carrier concentration and band alignment manipulation

Ceramics international, 2023-02, Vol.49 (4), p.5905-5914

2023

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7.3: Depletion-Mode Oxide-TFT Shift Register with Wide Operating Frequency Range for AMOLED Displays

SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.61-63

2015

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41‐1: Invited Paper: Internal Compensation Type OLED Display Using a‐IGZO TFTs

SID International Symposium Digest of technical papers, 2024-04, Vol.55 (S1), p.339-342

2024

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Enhanced NBIS Stability of Oxide Thin-Film Transistors by Using Terbium-Incorporated Alumina

IEEE electron device letters, 2024-09, Vol.45 (9), p.1594-1597

2024

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P-14: High Mobility BCE Al doped ZnSnInO TFT Fabricated Using Mixed Acid Mo/Al/Mo Etchant

SID International Symposium Digest of technical papers, 2014-06, Vol.45 (1), p.994-996

2014

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1‐1: Oxide Semiconductor Thin‐Film Transistors with High Mobility and Stability

SID International Symposium Digest of technical papers, 2024-04, Vol.55 (S1), p.6-7

2024

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20.4: An 8-in. Oxide-TFT-Driven Flexible AMOLED Display with Solution-Processed Insulators

SID International Symposium Digest of technical papers, 2012-06, Vol.43 (1), p.271-274

2012

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Controlled Zr doping for inkjet-printed ZTO TFTs

Ceramics international, 2017-04, Vol.43 (6), p.4775-4779

2017

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Offset Drain ZnO Thin-Film Transistors for High-Voltage Operation

IEEE electron device letters, 2017-08, Vol.38 (8), p.1047-1050

2017

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Smart Digital Capacitance Sensing System Using IGZO TFTs on Flexible Substrate

IEEE transactions on circuits and systems. II, Express briefs, 2024-01, Vol.71 (1), p.1-1

2024

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Vacuum-Free Liquid-Metal-Printed 2D Indium–Tin Oxide Thin-Film Transistor for Oxide Inverters

The Effect of Drain Bias Stress on the Instability of Turned-OFF Amorphous HfInZnO Thin-Film Transistors Under Light Irradiation

Effect of aluminum addition to solution-derived amorphous indium zinc oxide thin film for an oxide thin film transistors

Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors

Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

Active‐Matrix GaN µ‐LED Display Using Oxide Thin‐Film Transistor Backplane and Flip Chip LED Bonding

Surface engineering of Al2O3 dielectric layer for all-sputtered-oxide transparent and flexible a-IGZO thin film transistor

26-4: Highly Oxidation-Resistant Mo-Alloys for Metal-Oxide TFT Metallization

58.2: High-Performance Large-Size OLED Tv with Ultra Hd Resolution

21.1: Invited Paper: High Throughput MOTFT with Organic Etch-Stopper and SiNx Gate Insulator

Effect of Humidity on Properties of Aqueous-processed Tb-Doped Indium Oxide Thin-Film Transistors

p-Type transparent amorphous oxide thin-film transistors using low-temperature solution-processed nickel oxide

Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2gate insulator

39.2: Invited Paper: Recent Progress of Oxide-Semiconductor-Based P-channel TFTs

Effect of sulfur incorporation on solution-processed ZTO thin-film transistors

High-performance ITO/a-IGZO heterostructure TFTs enabled by thickness-dependent carrier concentration and band alignment manipulation

7.3: Depletion-Mode Oxide-TFT Shift Register with Wide Operating Frequency Range for AMOLED Displays

41‐1: Invited Paper: Internal Compensation Type OLED Display Using a‐IGZO TFTs

Enhanced NBIS Stability of Oxide Thin-Film Transistors by Using Terbium-Incorporated Alumina

P-14: High Mobility BCE Al doped ZnSnInO TFT Fabricated Using Mixed Acid Mo/Al/Mo Etchant

1‐1: Oxide Semiconductor Thin‐Film Transistors with High Mobility and Stability

20.4: An 8-in. Oxide-TFT-Driven Flexible AMOLED Display with Solution-Processed Insulators

Controlled Zr doping for inkjet-printed ZTO TFTs

Offset Drain ZnO Thin-Film Transistors for High-Voltage Operation

Smart Digital Capacitance Sensing System Using IGZO TFTs on Flexible Substrate

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