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Segmenting the 'visiting friends and relatives' travel market to a large urban destination: The Case of Nizhni Novgorod, Russia

Journal of destination marketing & management, 2015-12, Vol.4 (4), p.235-247

2015

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Molecular beam epitaxy of III-PxAs1 − x solid solutions: Mechanism of composition formation in the sublattice of a group V element

Semiconductors (Woodbury, N.Y.), 2015, Vol.49 (2), p.157-165

2015

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Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth

Semiconductors (Woodbury, N.Y.), 2015, Vol.49 (1), p.60-68

2015

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Anisotropy of the solid-state epitaxy of silicon carbide in silicon

Semiconductors (Woodbury, N.Y.), 2013-12, Vol.47 (12), p.1551-1555

2013

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Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.28-32

2015

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Optical monitoring of technological parameters during molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 2012-12, Vol.46 (12), p.1471-1475

2012

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Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning

Semiconductors (Woodbury, N.Y.), 2015, Vol.49 (1), p.88-91

2015

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Nucleation and growth of ordered groups of SiGe quantum dots

Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.149-153

2015

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Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

Semiconductors (Woodbury, N.Y.), 2015, Vol.49 (1), p.92-94

2015

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Features of the persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells and a tunneling-transparent barrier

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1396-1401

2012

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Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1438-1441

2013

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Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.124-129

2015

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Structural studies of a ferromagnetic GaMnSb layer

Semiconductors (Woodbury, N.Y.), 2013-12, Vol.47 (12), p.1587-1590

2013

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Characteristics of fullerene-based diode structures on polymer and glass substrates

Semiconductors (Woodbury, N.Y.), 2015, Vol.49 (1), p.134-137

2015

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Quasi-elastic and inelastic approximations in the description of the charge carrier dynamics in diamond

Semiconductors (Woodbury, N.Y.), 2013-12, Vol.47 (12), p.1604-1609

2013

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New system of self-assembled GaSb/GaP quantum dots

Semiconductors (Woodbury, N.Y.), 2012-12, Vol.46 (12), p.1534-1538

2012

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Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1470-1474

2013

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Features of impurity-photoconductivity relaxation in boron-doped silicon

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1387-1391

2012

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Lateral photoconductivity in structures with Ge/Si quantum dots

Semiconductors (Woodbury, N.Y.), 2013-12, Vol.47 (12), p.1574-1577

2013

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Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures

Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.191-198

2015

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Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.69-74

2015

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Epitaxial growth of hexagonal silicon polytypes on sapphire

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.95-98

2015

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Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in p-Si:B

Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.187-190

2015

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Josephson junctions with nonsinusoidal current-phase relations based on heterostructures with a ferromagnetic spacer and their applications

Physics of the solid state, 2010-11, Vol.52 (11), p.2246-2251

2010

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Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1513-1516

2013

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Segmenting the 'visiting friends and relatives' travel market to a large urban destination: The Case of Nizhni Novgorod, Russia

Molecular beam epitaxy of III-PxAs1 − x solid solutions: Mechanism of composition formation in the sublattice of a group V element

Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth

Anisotropy of the solid-state epitaxy of silicon carbide in silicon

Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping

Optical monitoring of technological parameters during molecular-beam epitaxy

Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning

Nucleation and growth of ordered groups of SiGe quantum dots

Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

Features of the persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells and a tunneling-transparent barrier

Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells

Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

Structural studies of a ferromagnetic GaMnSb layer

Characteristics of fullerene-based diode structures on polymer and glass substrates

Quasi-elastic and inelastic approximations in the description of the charge carrier dynamics in diamond

New system of self-assembled GaSb/GaP quantum dots

Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping

Features of impurity-photoconductivity relaxation in boron-doped silicon

Lateral photoconductivity in structures with Ge/Si quantum dots

Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures

Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation

Epitaxial growth of hexagonal silicon polytypes on sapphire

Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in p-Si:B

Josephson junctions with nonsinusoidal current-phase relations based on heterostructures with a ferromagnetic spacer and their applications

Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells

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