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Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO4 by Radio‐Frequency Molecular Beam Epitaxy

physica status solidi (b), 2023-07, Vol.260 (7), p.n/a

2023

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AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900–1200°C temperature range

Journal of crystal growth, 2017-10, Vol.476, p.58-63

2017

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Kinetically limited growth of GaAsBi by molecular-beam epitaxy

Journal of crystal growth, 2012, Vol.338 (1), p.107-110

2012

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Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms

Physica status solidi. PSS-RRL. Rapid research letters, 2013-10, Vol.7 (10), p.699-712

Consonni, V.

2013

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MBE grown Ga2O3 and its power device applications

Journal of crystal growth, 2013-09, Vol.378, p.591-595

2013

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Multifunctional L10-Mn1.5Ga Films with Ultrahigh Coercivity, Giant Perpendicular Magnetocrystalline Anisotropy and Large Magnetic Energy Product

Advanced materials (Weinheim), 2012-08, Vol.24 (33), p.4547-4551

2012

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AlGaN/GaN/AlGaN DH‐HEMTs Grown on a Patterned Silicon Substrate

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades

Physica Status Solidi. B: Basic Solid State Physics, 2016-04, Vol.253 (4), p.626-629

2016

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Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy

Journal of crystal growth, 2013-09, Vol.378, p.303-306

2013

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Energy-decreasing exponential time differencing Runge–Kutta methods for phase-field models

Journal of computational physics, 2022-04, Vol.454, p.110943, Article 110943

2022

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Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer

Journal of crystal growth, 2012-08, Vol.353 (1), p.39-46

2012

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Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxy

Journal of crystal growth, 2013-09, Vol.378, p.125-128

2013

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Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy

Journal of materials research, 2016-04, Vol.31 (7), p.900-910

2016

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Epitaxial Aluminum Scandium Nitride Super High Frequency Acoustic Resonators

Journal of microelectromechanical systems, 2020-08, Vol.29 (4), p.490-498

2020

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Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets

Nano letters, 2016-02, Vol.16 (2), p.834-841

2016

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Anomalously low Ga incorporation in high Al-content AlGaN grown on $(11{bar {2}}0)$ non-polar plane by molecular beam epitaxy

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1498-1500

2011

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Breakdown of the Small‐Polaron Hopping Model in Higher‐Order Spinels

Advanced materials (Weinheim), 2020-12, Vol.32 (49), p.e2004490-n/a

2020

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Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

Journal of crystal growth, 2012-08, Vol.353 (1), p.1-4

2012

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Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates

Journal of crystal growth, 2012-04, Vol.345 (1), p.16-21

2012

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Growth of metamorphic InGaP layers on GaAs substrates

Journal of crystal growth, 2013-09, Vol.378, p.141-144

2013

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A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage Amplification

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2725-2731

2022

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High-current AlGaN/GaN high electron mobility transistors achieved by selective-area growth via plasma-assisted molecular beam epitaxy

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.180-183

2014

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Understanding Growth‐Faulted GaAsBi Samples by Reflectance Anisotropy Spectroscopy

physica status solidi (b), 2024-02, Vol.261 (2), p.n/a

2024

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Metastable Polymorphic Phases in Monolayer TaTe2

Small (Weinheim an der Bergstrasse, Germany), 2023-07, Vol.19 (29), p.e2300262-n/a

2023

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Antiferromagnetic order in MnBi2Te4 films grown on Si(1 1 1) by molecular beam epitaxy

Journal of crystal growth, 2022-08, Vol.591, p.126677, Article 126677

2022

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