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Epitaxial growth of few-layer β-In2Se3 thin films by metalorganic chemical vapor deposition

Journal of crystal growth, 2020-03, Vol.533, p.125471, Article 125471

2020

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Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2016-12, Vol.456, p.137-139

2016

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Effects of deposition temperature and ammonia flow on metal-organic chemical vapor deposition of hexagonal boron nitride

Journal of crystal growth, 2018-03, Vol.485, p.90-95

2018

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Carbon incorporation in boron nitride grown by MOCVD under N2 flow

Journal of alloys and compounds, 2020-01, Vol.815, p.152364, Article 152364

2020

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Heteroepitaxial AlN growth on c-plane sapphire substrates by ammonia-free high temperature metalorganic chemical vapor deposition

Journal of crystal growth, 2022-03, Vol.581, p.126496, Article 126496

2022

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Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (AlxGa1–x)2O3 Films Using Trimethylgallium

Physica status solidi. PSS-RRL. Rapid research letters, 2023-10, Vol.17 (10)

2023

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Growth by MOCVD and photoluminescence of semipolar (202¯1¯) InN quantum dashes

Journal of crystal growth, 2021-06, Vol.563, p.126093, Article 126093

2021

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Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers

Journal of crystal growth, 2017-11, Vol.478, p.64-70

2017

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Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition

Journal of crystal growth, 2018-11, Vol.502, p.71-75

2018

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Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2009-07, Vol.311 (15), p.3817-3823

2009

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Selective-area growth of thin GaN nanowires by MOCVD

Journal of crystal growth, 2012-10, Vol.357 (C), p.58-61

2012

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Effect of as flux rate during growth interruption on the performances of InAs/InGaAsP/InP quantum dots and their lasers grown by metal-organic chemical vapor deposition

Journal of crystal growth, 2022-01, Vol.578, p.126424, Article 126424

2022

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Analysis and optimization of MOCVD flow ratio based on machine learning and PSO algorithm

Journal of crystal growth, 2022-07, Vol.590, p.126683, Article 126683

2022

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Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices

IEEE journal of quantum electronics, 2022-08, Vol.58 (4), p.1-11

2022

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A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl)

Journal of crystal growth, 2020-03, Vol.534 (C), p.125492, Article 125492

2020

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p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes

IEEE photonics technology letters, 2018-01, Vol.30 (2), p.181-184

2018

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IEEE_Xplore

Self-organized InAs/InAlGaAs quantum dots as dislocation filters for InP films on (001) Si

Journal of crystal growth, 2017-04, Vol.464, p.28-32

2017

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Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

Journal of crystal growth, 2018-02, Vol.483, p.134-139

2018

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The effects of flow multiplicity on GaN deposition in a rotating disk CVD reactor

Journal of crystal growth, 2017-01, Vol.458, p.140-148

2017

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Influence of thin MOCVD-grown GaN layer on underlying AlN template

Journal of crystal growth, 2020-02, Vol.532, p.125376, Article 125376

2020

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Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

Journal of crystal growth, 2016-12, Vol.455, p.105-110

2016

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Metalorganic chemical vapor deposition of aluminum nitride on vertical surfaces

Journal of crystal growth, 2020-02, Vol.531, p.125345, Article 125345

2020

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Kinetically stabilized high-temperature InN growth

Journal of crystal growth, 2020-04, Vol.536 (C), p.125574, Article 125574

2020

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InAs1−ySby virtual substrates grown by MOCVD for long wave infrared detectors

Journal of crystal growth, 2020-04, Vol.535, p.125552, Article 125552

2020

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Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates

Journal of crystal growth, 2020-06, Vol.540, p.125652, Article 125652

2020

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Epitaxial growth of few-layer β-In2Se3 thin films by metalorganic chemical vapor deposition

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

Effects of deposition temperature and ammonia flow on metal-organic chemical vapor deposition of hexagonal boron nitride

Carbon incorporation in boron nitride grown by MOCVD under N2 flow

Heteroepitaxial AlN growth on c-plane sapphire substrates by ammonia-free high temperature metalorganic chemical vapor deposition

Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (AlxGa1–x)2O3 Films Using Trimethylgallium

Growth by MOCVD and photoluminescence of semipolar (202¯1¯) InN quantum dashes

Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers

Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

Selective-area growth of thin GaN nanowires by MOCVD

Effect of as flux rate during growth interruption on the performances of InAs/InGaAsP/InP quantum dots and their lasers grown by metal-organic chemical vapor deposition

Analysis and optimization of MOCVD flow ratio based on machine learning and PSO algorithm

Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices

A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl)

p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes

Self-organized InAs/InAlGaAs quantum dots as dislocation filters for InP films on (001) Si

Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

The effects of flow multiplicity on GaN deposition in a rotating disk CVD reactor

Influence of thin MOCVD-grown GaN layer on underlying AlN template

Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

Metalorganic chemical vapor deposition of aluminum nitride on vertical surfaces

Kinetically stabilized high-temperature InN growth

InAs1−ySby virtual substrates grown by MOCVD for long wave infrared detectors

Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates

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