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Ultra-Fast Perpendicular Spin-Orbit Torque MRAM

IEEE transactions on magnetics, 2018-04, Vol.54 (4), p.1-4

2018

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DeepNVM++: Cross-Layer Modeling and Optimization Framework of Nonvolatile Memories for Deep Learning

IEEE transactions on computer-aided design of integrated circuits and systems, 2022-10, Vol.41 (10), p.3426-3437

2022

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Magnetoresistive Random Access Memory

Proceedings of the IEEE, 2016-10, Vol.104 (10), p.1796-1830

2016

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Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions With Perpendicular Anisotropy

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.581-587

2021

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Magnetic stray fields in nanoscale magnetic tunnel junctions

Journal of physics. D, Applied physics, 2020-01, Vol.53 (4), p.44001

2020

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Area Efficient Shared Diode Multi-Level Cell SOT-MRAM

IEEE transactions on magnetics, 2018-11, Vol.54 (11), p.1-5

2018

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A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C

IEEE journal of solid-state circuits, 2024-04, Vol.59 (4), p.1283-1292

2024

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Differential MRAM Sensing Scheme with Magnetoresistance Boosted 4T-2MTJ Bit-cell

IEEE transactions on magnetics, 2023-11, Vol.59 (11), p.1-1

2023

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Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-on-MgO-Barrier Spin-Orbit Torque MRAM Cell

IEEE electron device letters, 2018-09, Vol.39 (9), p.1306-1309

2018

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Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- \mu A Sensing Resolution, and 17.5-nS Read Access Time

IEEE journal of solid-state circuits, 2019-04, Vol.54 (4), p.1029-1038

2019

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Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling

IEEE transactions on magnetics, 2015-11, Vol.51 (11), p.1-7

2015

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Numerical study of two-terminal SOT-MRAM

Physica. B, Condensed matter, 2024-01, Vol.673, p.415362, Article 415362

2024

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Complimentary Polarizers STT-MRAM (CPSTT) for On-Chip Caches

IEEE electron device letters, 2013-02, Vol.34 (2), p.232-234

2013

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Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with Four Bits per SOT Programming Line

IEEE electron device letters, 2024-08, p.1-1

2024

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Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

Progress in materials science, 2017-06, Vol.87, p.33-82

2017

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Energy-Efficient Differential Spin Hall MRAM-Based 4-2 Magnetic Compressor

IEEE transactions on magnetics, 2020-01, Vol.56 (1), p.1-11

2020

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Memory materials and devices: From concept to application

InfoMat, 2020-03, Vol.2 (2), p.261-290

2020

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Nanoscale resistive switching memory devices: a review

Nanotechnology, 2019-08, Vol.30 (35), p.352003

2019

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In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM

IEEE transactions on magnetics, 2017-11, Vol.53 (11), p.1-4

2017

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Approx-IMC: A general-purpose approximate digital in-memory computing framework based on STT-MRAM

Future generation computer systems, 2024-11, Vol.160, p.40-53

2024

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Triple Sensing Current Margin for Maintainable MRAM Yield at Sub-100% Tunnel Magnetoresistance Ratio

IEEE transactions on magnetics, 2021-02, Vol.57 (2), p.1-5

2021

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Perpendicular shape anisotropy spin transfer torque-MRAM: determination of pillar tilt angle from 3D Stoner-Wohlfarth astroid analysis

Journal of physics. D, Applied physics, 2019-12, Vol.52 (50), p.505005

2019

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Life-time degradation of STT-MRAM by self-heating effect with TDDB model

Solid-state electronics, 2020-11, Vol.173, p.107878, Article 107878

2020

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SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration

IEEE transactions on electron devices, 2024-09, Vol.71 (9), p.5367-5374

2024

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Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications

Solid-state electronics, 2020-06, Vol.168, p.107736, Article 107736

2020

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Ultra-Fast Perpendicular Spin-Orbit Torque MRAM

DeepNVM++: Cross-Layer Modeling and Optimization Framework of Nonvolatile Memories for Deep Learning

Magnetoresistive Random Access Memory

Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions With Perpendicular Anisotropy

Magnetic stray fields in nanoscale magnetic tunnel junctions

Area Efficient Shared Diode Multi-Level Cell SOT-MRAM

A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C

Differential MRAM Sensing Scheme with Magnetoresistance Boosted 4T-2MTJ Bit-cell

Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-on-MgO-Barrier Spin-Orbit Torque MRAM Cell

Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- \mu A Sensing Resolution, and 17.5-nS Read Access Time

Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling

Numerical study of two-terminal SOT-MRAM

Complimentary Polarizers STT-MRAM (CPSTT) for On-Chip Caches

Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with Four Bits per SOT Programming Line

Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

Energy-Efficient Differential Spin Hall MRAM-Based 4-2 Magnetic Compressor

Memory materials and devices: From concept to application

Nanoscale resistive switching memory devices: a review

In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM

Approx-IMC: A general-purpose approximate digital in-memory computing framework based on STT-MRAM

Triple Sensing Current Margin for Maintainable MRAM Yield at Sub-100% Tunnel Magnetoresistance Ratio

Perpendicular shape anisotropy spin transfer torque-MRAM: determination of pillar tilt angle from 3D Stoner-Wohlfarth astroid analysis

Life-time degradation of STT-MRAM by self-heating effect with TDDB model

SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration

Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications

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