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0.01–0.5 sun is a realistic and alternative irradiance window to analyze urban outdoor photovoltaic cells

Materials today energy, 2023-08, Vol.36, p.101347, Article 101347

2023

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A 0.01mm2, 0.4V-VDD, 4.5nW-Power DC-Coupled Digital Acquisition Front-End Based on Time-Multiplexed Digital Differential Amplification

ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC), 2022, p.405-408

2022

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A 0.06-3.4-MHz 92- \mu W Analog FIR Channel Selection Filter With Very Sharp Transition Band for IoT Receivers

IEEE solid-state circuits letters, 2019-09, Vol.2 (9), p.171-174

2019

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A 0.06-3.4-MHz 92-μW Analog FIR Channel Selection Filter With Very Sharp Transition Band for IoT Receivers

ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC), 2019, p.171-174

2019

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A 0.08%/V 32.3-ppm/°C 36.6-kHz Unregulated Current-Reuse Ring Oscillator With VGS-Ratio-Based Compensation Using One-Type-Only Resistor

IEEE journal of solid-state circuits, 2024-11, Vol.59 (11), p.3767-3779

2024

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A 0.1-nW-1- \mu W Energy-Efficient All-Dynamic Versatile Capacitance-to-Digital Converter

IEEE journal of solid-state circuits, 2019-07, Vol.54 (7), p.1841-1851

2019

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A 0.1-to-4.3-GHz Variable-Gain Balun LNA With Dual-Path Noise-Canceling Technique

IEEE transactions on microwave theory and techniques, 2024-08, p.1-9

2024

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0.13 μm modular BCD technology enable to embedding high density E2PROM, RF and hall sensor suitable for IoT application

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.419-422

2016

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A 0.15-to-0.5 V Body-Driven Dynamic Comparator with Rail-to-Rail ICMR

Journal of low power electronics and applications, 2023-06, Vol.13 (2), p.35

2023

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A 0.1nW −1µW All-Dynamic Capacitance-to-Digital Converter with Power/Speed/Capacitance Scalability

ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC), 2018, p.18-21

2018

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0.2-nJ/b Fast Start-Up Ultralow Power Wireless Transmitter for IoT Applications

IEEE transactions on microwave theory and techniques, 2018-01, Vol.66 (1), p.259-272

2018

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A 0.2-V 30-MS/s 11b-ENOB Open-Loop VCO-Based ADC in 28-nm CMOS

IEEE solid-state circuits letters, 2018-09, Vol.1 (9), p.190-193

2018

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A 0.21V 40nm NAND-ROM for IoT Sensing Systems with Long Standby Periods

2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020, p.1-4

2020

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A 0.23V 40nm OAI-ROM with Low Active and Standby Power for AI-based IoT Edge Devices

2020 International Conference on Electronics, Information, and Communication (ICEIC), 2020, p.1-4

2020

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A 0.2V 0.97nW 0.011mm2 Fully-Passive mHBC Tag Using Intermediate Interference Modulation in 65nm CMOS

2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), 2021, p.1-5

2021

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A 0.3 V OTA with Enhanced CMRR and High Robustness to PVT Variations

Journal of low power electronics and applications, 2024-06, Vol.14 (2), p.21

2024

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A 0.3 V Rail-to-Rail Ultra-Low-Power OTA with Improved Bandwidth and Slew Rate

Journal of low power electronics and applications, 2021-06, Vol.11 (2), p.19

2021

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A 0.32 nW-1.07 µW All-Dynamic Versatile Resistive Sensor Interface With System-Level Ratiometric Measurement

IEEE transactions on circuits and systems. I, Regular papers, 2022-02, Vol.69 (2), p.506-517

2022

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A 0.34-571nW All-Dynamic Versatile Sensor Interface for Temperature, Capacitance, and Resistance Sensing

ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC), 2019, p.161-164

2019

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A 0.35-V 5,200-μm2 2.1-MHz Temperature-Resilient Relaxation Oscillator With 667 fJ/Cycle Energy Efficiency Using an Asymmetric Swing-Boosted RC Network and a Dual-Path Comparator

IEEE journal of solid-state circuits, 2021-09, Vol.56 (9), p.2701-2710

2021

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A 0.37mm2 Fully-Integrated Wide Dynamic Range Sub-GHz Receiver Front-End without Off-Chip Matching Components

IEICE transactions on electronics, 2022-07, Vol.E105.C (7), p.334-342, Article 2021CDP0003

2022

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A 0.39-3.56-μW Wide-Dynamic-Range Universal Multi-Sensor Interface Circuit

IEEE sensors journal, 2020-10, Vol.20 (20), p.12262-12273

2020

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A 0.3V, 35% Tuning-Range, 60kHz 1/f3-Corner Digitally Controlled Oscillator with Vertically Integrated Switched Capacitor Banks Achieving FoMT of -199dB in 28-nm CMOS

2019 IEEE Custom Integrated Circuits Conference (CICC), 2019, p.1-4

2019

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A 0.4-V 0.0294-mm ^ Resistor-Based Temperature Sensor Achieving \pm 0.24 ^ C p2p Inaccuracy From - 40 ^ C to 125 ^ C and 385 \mathrm\cdot\mathrm^ Resolution FoM in 65-nm CMOS

IEEE journal of solid-state circuits, 2023-05, p.1-11

2023

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A 0.4-V 0.93-nW/kHz Relaxation Oscillator Exploiting Comparator Temperature-Dependent Delay to Achieve 94-ppm/°C Stability

IEEE journal of solid-state circuits, 2018-10, Vol.53 (10), p.3004-3011

2018

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0.01–0.5 sun is a realistic and alternative irradiance window to analyze urban outdoor photovoltaic cells

A 0.01mm2, 0.4V-VDD, 4.5nW-Power DC-Coupled Digital Acquisition Front-End Based on Time-Multiplexed Digital Differential Amplification

A 0.06-3.4-MHz 92- \mu W Analog FIR Channel Selection Filter With Very Sharp Transition Band for IoT Receivers

A 0.06-3.4-MHz 92-μW Analog FIR Channel Selection Filter With Very Sharp Transition Band for IoT Receivers

A 0.08%/V 32.3-ppm/°C 36.6-kHz Unregulated Current-Reuse Ring Oscillator With VGS-Ratio-Based Compensation Using One-Type-Only Resistor

A 0.1-nW-1- \mu W Energy-Efficient All-Dynamic Versatile Capacitance-to-Digital Converter

A 0.1-to-4.3-GHz Variable-Gain Balun LNA With Dual-Path Noise-Canceling Technique

0.13 μm modular BCD technology enable to embedding high density E2PROM, RF and hall sensor suitable for IoT application

A 0.15-to-0.5 V Body-Driven Dynamic Comparator with Rail-to-Rail ICMR

A 0.1nW −1µW All-Dynamic Capacitance-to-Digital Converter with Power/Speed/Capacitance Scalability

0.2-nJ/b Fast Start-Up Ultralow Power Wireless Transmitter for IoT Applications

A 0.2-V 30-MS/s 11b-ENOB Open-Loop VCO-Based ADC in 28-nm CMOS

A 0.21V 40nm NAND-ROM for IoT Sensing Systems with Long Standby Periods

A 0.23V 40nm OAI-ROM with Low Active and Standby Power for AI-based IoT Edge Devices

A 0.2V 0.97nW 0.011mm2 Fully-Passive mHBC Tag Using Intermediate Interference Modulation in 65nm CMOS

A 0.3 V OTA with Enhanced CMRR and High Robustness to PVT Variations

A 0.3 V Rail-to-Rail Ultra-Low-Power OTA with Improved Bandwidth and Slew Rate

A 0.32 nW-1.07 µW All-Dynamic Versatile Resistive Sensor Interface With System-Level Ratiometric Measurement

A 0.34-571nW All-Dynamic Versatile Sensor Interface for Temperature, Capacitance, and Resistance Sensing

A 0.35-V 5,200-μm2 2.1-MHz Temperature-Resilient Relaxation Oscillator With 667 fJ/Cycle Energy Efficiency Using an Asymmetric Swing-Boosted RC Network and a Dual-Path Comparator

A 0.37mm2 Fully-Integrated Wide Dynamic Range Sub-GHz Receiver Front-End without Off-Chip Matching Components

A 0.39-3.56-μW Wide-Dynamic-Range Universal Multi-Sensor Interface Circuit

A 0.3V, 35% Tuning-Range, 60kHz 1/f3-Corner Digitally Controlled Oscillator with Vertically Integrated Switched Capacitor Banks Achieving FoMT of -199dB in 28-nm CMOS

A 0.4-V 0.0294-mm ^ Resistor-Based Temperature Sensor Achieving \pm 0.24 ^ C p2p Inaccuracy From - 40 ^ C to 125 ^ C and 385 \mathrm\cdot\mathrm^ Resolution FoM in 65-nm CMOS

A 0.4-V 0.93-nW/kHz Relaxation Oscillator Exploiting Comparator Temperature-Dependent Delay to Achieve 94-ppm/°C Stability

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