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Interfacial engineering of In2O3/InN heterostructure with promoted charge transfer for highly efficient CO2 reduction to formate

Chemical engineering journal (Lausanne, Switzerland : 1996), 2022-06, Vol.437, p.135114, Article 135114

2022

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RF-MBE法を用いた窒化インジウム成長過程の極微構造評価

材料, 2024/04/15, Vol.73(4), pp.351-355

2024

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Microstructural Characterization of InN Growth Process by RF-MBE

Journal of the Society of Materials Science, Japan, 2024/04/15, Vol.73(4), pp.351-355

2024

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Electronic, optical and thermoelectric properties of WSe2–InN 2D interface: A DFT study

Solid state communications, 2022-10, Vol.354, p.114889, Article 114889

2022

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Low temperature growth of semi-polar InN (101¯1) on non-crystalline substrate by plasma-assisted laser ablation technique

Applied surface science, 2022-05, Vol.584, p.152519, Article 152519

2022

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Wafer‐Scale InN/In2S3 Core–Shell Nanorod Array for Ultrafast Self‐Powered Photodetection

Advanced functional materials, 2022-04, Vol.32 (14), p.n/a

2022

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First-principles insight into Ni-doped InN monolayer as a noxious gases scavenger

Applied surface science, 2019-11, Vol.494, p.859-866

2019

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Study on the effect of sputtering pressure on the physical properties of InN films on ITO substrate and the dependence of carrier transport characteristics of Li-doped p-NiO/n-InN heterojunction on the environmental temperature

Vacuum, 2024-02, Vol.220, p.112833, Article 112833

2024

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Preparation of InN films at different substrate temperatures and the effect of operating temperatures on the carrier transmission characteristics of p-NiO/n-InN heterojunction

Vacuum, 2021-12, Vol.194, p.110583, Article 110583

2021

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Impact of substrate nitridation on the growth of InN on In 2 O 3 (111) by plasma-assisted molecular beam epitaxy

Applied surface science, 2016-04, Vol.369, p.159-162

2016

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Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4

Journal of applied physics, 2010-03, Vol.107 (5)

Persson, Clas

2010

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Exploration on Electronic Properties of Self-Assembled Indium Nitrogen Nanosheets and Nanowires by a Density Functional Method

Molecules (Basel, Switzerland), 2023-11, Vol.28 (21), p.7358

2023

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Pristine and Cu decorated hexagonal InN monolayer, a promising candidate to detect and scavenge SF6 decompositions based on first-principle study

Journal of hazardous materials, 2019-02, Vol.363, p.346-357

2019

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Metal-Decorated InN Monolayer Senses N2 against CO2

ACS applied materials & interfaces, 2023-03, Vol.15 (9), p.12534-12544

2023

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Geometrical and electronic properties of the plane-like selfassembled structured (In12N12)n (n=1–9) nanomaterials based on In12N12 cages connecting with four-membered rings

Microporous and mesoporous materials, 2021-04, Vol.318, p.111041, Article 111041

2021

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Ein faschistischer Diktator. Adolf Hitler – Biografie

Schieder, Wolfgang

1. Aufl., 2023

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Novel buckled graphenylene-like InN and its strain engineering effects

Computational and theoretical chemistry, 2024-01, Vol.1231, p.114418, Article 114418

2024

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Ru-InN Monolayer as a Gas Scavenger to Guard the Operation Status of SF6 Insulation Devices: A First-Principles Theory

IEEE sensors journal, 2019-07, Vol.19 (13), p.5249-5255

2019

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The influence of N-vacancy on the electronic and optical properties of bulk InN nitrides

Materials science & engineering. B, Solid-state materials for advanced technology, 2021-09, Vol.271, p.115265, Article 115265

Pan, Yong

2021

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Self-powered flexible piezoelectric motion sensor with spatially aligned InN nanowires

Chemical engineering journal (Lausanne, Switzerland : 1996), 2024-04, Vol.486, p.150205, Article 150205

2024

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Detection of Gas Molecules (CO, CO2, NO and NO2) using Indium Nitride Nanoribbons for Sensing Device Applications

IEEE sensors journal, 2023-10, Vol.23 (19), p.1-1

2023

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The temporally varying roles of rainfall, snowmelt and soil moisture for debris flow initiation in a snow-dominated system

Hydrology and earth system sciences, 2018-06, Vol.22 (6), p.3493-3513

2018

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Developing Hospitality Properties and Facilities

Third edition, 2022

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Recent progress in group III-nitride nanostructures: From materials to applications

Materials science & engineering. R, Reports : a review journal, 2020-10, Vol.142, p.100578, Article 100578

2020

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Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Crystal research and technology (1979), 2024-07, Vol.59 (7), p.n/a

2024

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Interfacial engineering of In2O3/InN heterostructure with promoted charge transfer for highly efficient CO2 reduction to formate

RF-MBE法を用いた窒化インジウム成長過程の極微構造評価

Microstructural Characterization of InN Growth Process by RF-MBE

Electronic, optical and thermoelectric properties of WSe2–InN 2D interface: A DFT study

Low temperature growth of semi-polar InN (101¯1) on non-crystalline substrate by plasma-assisted laser ablation technique

Wafer‐Scale InN/In2S3 Core–Shell Nanorod Array for Ultrafast Self‐Powered Photodetection

First-principles insight into Ni-doped InN monolayer as a noxious gases scavenger

Study on the effect of sputtering pressure on the physical properties of InN films on ITO substrate and the dependence of carrier transport characteristics of Li-doped p-NiO/n-InN heterojunction on the environmental temperature

Preparation of InN films at different substrate temperatures and the effect of operating temperatures on the carrier transmission characteristics of p-NiO/n-InN heterojunction

Impact of substrate nitridation on the growth of InN on In 2 O 3 (111) by plasma-assisted molecular beam epitaxy

Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4

Exploration on Electronic Properties of Self-Assembled Indium Nitrogen Nanosheets and Nanowires by a Density Functional Method

Pristine and Cu decorated hexagonal InN monolayer, a promising candidate to detect and scavenge SF6 decompositions based on first-principle study

Metal-Decorated InN Monolayer Senses N2 against CO2

Geometrical and electronic properties of the plane-like selfassembled structured (In12N12)n (n=1–9) nanomaterials based on In12N12 cages connecting with four-membered rings

Ein faschistischer Diktator. Adolf Hitler – Biografie

Novel buckled graphenylene-like InN and its strain engineering effects

Ru-InN Monolayer as a Gas Scavenger to Guard the Operation Status of SF6 Insulation Devices: A First-Principles Theory

The influence of N-vacancy on the electronic and optical properties of bulk InN nitrides

Self-powered flexible piezoelectric motion sensor with spatially aligned InN nanowires

Detection of Gas Molecules (CO, CO2, NO and NO2) using Indium Nitride Nanoribbons for Sensing Device Applications

The temporally varying roles of rainfall, snowmelt and soil moisture for debris flow initiation in a snow-dominated system

Developing Hospitality Properties and Facilities

Recent progress in group III-nitride nanostructures: From materials to applications

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

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