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Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

IEEE journal of photovoltaics, 2018-03, Vol.8 (2), p.626-632

2018

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Surface and buried interface layer studies on challenging structures as studied by ARXPS

Surface and interface analysis, 2017-12, Vol.49 (13), p.1309-1315

2017

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Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers-Part II: Application and Results

IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.1-8

2023

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Single-photon sources with quantum dots in III–V nanowires

Nanophotonics (Berlin, Germany), 2019-09, Vol.8 (5), p.747-769

2019

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Beyond the Bandwidth Limit: A Tutorial on Low-Noise Amplifier Circuits for Advanced Systems Based on III-V Process

IEEE transactions on circuits and systems. II, Express briefs, 2024-03, Vol.71 (3), p.1644-1649

2024

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Thermal Analysis of InP Lasers Transfer Printed to Silicon Photonics Substrates

Journal of lightwave technology, 2018-12, Vol.36 (24), p.5935-5941

2018

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Tapered Cross Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III‐V Semiconductor Devices

Advanced materials interfaces, 2023-01, Vol.10 (3), p.n/a

2023

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Resonantly Enhanced Second-Harmonic Generation Using III–V Semiconductor All-Dielectric Metasurfaces

Nano letters, 2016-09, Vol.16 (9), p.5426-5432

2016

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Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

Progress in photovoltaics, 2014-03, Vol.22 (3), p.277-282

2014

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Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Journal of non-crystalline solids, 2010-05, Vol.356 (20), p.1006-1011

2010

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Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells

Progress in photovoltaics, 2016-04, Vol.24 (4), p.533-542

2016

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Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

IEEE transactions on nuclear science, 2018-12, Vol.65 (12), p.2862-2869

2018

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Evaluation of Ballistic Transport in III-V-Based p-Channel MOSFETs

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1053-1059

2017

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NIEL Calculations for III-V Compound Semiconductors Under Electron or Proton Irradiation

IEEE transactions on nuclear science, 2022-09, Vol.69 (9), p.2056-2064

2022

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Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future

Applied surface science, 2010-07, Vol.256 (19), p.5698-5707

2010

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Characterization of wide-gap semiconductors by photothermal deflection spectroscopy

Japanese Journal of Applied Physics, 2023-11, Vol.62 (SN), p.SN1007

Sumiya, Masatomo

2023

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Enhanced Second-Harmonic Generation Using Broken Symmetry III–V Semiconductor Fano Metasurfaces

ACS photonics, 2018-05, Vol.5 (5), p.1685-1690

2018

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Kinetics of persistent photoconductivity in crystalline III-V semiconductors

Philosophical magazine letters, 2017-07, Vol.97 (7), p.257-264

2017

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CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III–V Materials Defects

IEEE transactions on nanotechnology, 2016-11, Vol.15 (6), p.986-992

2016

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Novel Light Source Integration Approaches for Silicon Photonics

Laser & photonics reviews, 2017-07, Vol.11 (4), p.n/a

2017

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Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application

IEEE electron device letters, 2017-05, Vol.38 (5), p.552-555

2017

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A model describing the pressure dependence of the band gap energy for the group III–V semiconductors

Physica. B, Condensed matter, 2016-08, Vol.494, p.71-74

2016

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Moore's law in photonics

Laser & photonics reviews, 2012-01, Vol.6 (1), p.1-13

2012

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Quasi-Ballistic \Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4685-4692

2016

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Review of the mechanisms for the phonon bottleneck effect in III–V semiconductors and their application for efficient hot carrier solar cells

Progress in photovoltaics, 2022-06, Vol.30 (6), p.581-596

2022

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Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

Surface and buried interface layer studies on challenging structures as studied by ARXPS

Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers-Part II: Application and Results

Single-photon sources with quantum dots in III–V nanowires

Beyond the Bandwidth Limit: A Tutorial on Low-Noise Amplifier Circuits for Advanced Systems Based on III-V Process

Thermal Analysis of InP Lasers Transfer Printed to Silicon Photonics Substrates

Tapered Cross Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III‐V Semiconductor Devices

Resonantly Enhanced Second-Harmonic Generation Using III–V Semiconductor All-Dielectric Metasurfaces

Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Evaluation of Ballistic Transport in III-V-Based p-Channel MOSFETs

NIEL Calculations for III-V Compound Semiconductors Under Electron or Proton Irradiation

Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future

Characterization of wide-gap semiconductors by photothermal deflection spectroscopy

Enhanced Second-Harmonic Generation Using Broken Symmetry III–V Semiconductor Fano Metasurfaces

Kinetics of persistent photoconductivity in crystalline III-V semiconductors

CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III–V Materials Defects

Novel Light Source Integration Approaches for Silicon Photonics

Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application

A model describing the pressure dependence of the band gap energy for the group III–V semiconductors

Moore's law in photonics

Quasi-Ballistic \Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs

Review of the mechanisms for the phonon bottleneck effect in III–V semiconductors and their application for efficient hot carrier solar cells

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