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Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

IEEE journal of photovoltaics, 2018-03, Vol.8 (2), p.626-632

2018

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Surface and buried interface layer studies on challenging structures as studied by ARXPS

Surface and interface analysis, 2017-12, Vol.49 (13), p.1309-1315

2017

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Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers-Part II: Application and Results

IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.1-8

2023

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Single-photon sources with quantum dots in III–V nanowires

Nanophotonics (Berlin, Germany), 2019-09, Vol.8 (5), p.747-769

2019

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Beyond the Bandwidth Limit: A Tutorial on Low-Noise Amplifier Circuits for Advanced Systems Based on III-V Process

IEEE transactions on circuits and systems. II, Express briefs, 2024-03, Vol.71 (3), p.1644-1649

2024

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Thermal Analysis of InP Lasers Transfer Printed to Silicon Photonics Substrates

Journal of lightwave technology, 2018-12, Vol.36 (24), p.5935-5941

2018

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Tapered Cross Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III‐V Semiconductor Devices

Advanced materials interfaces, 2023-01, Vol.10 (3), p.n/a

2023

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Resonantly Enhanced Second-Harmonic Generation Using III–V Semiconductor All-Dielectric Metasurfaces

Nano letters, 2016-09, Vol.16 (9), p.5426-5432

2016

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Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells

Progress in photovoltaics, 2016-04, Vol.24 (4), p.533-542

2016

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Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

Progress in photovoltaics, 2014-03, Vol.22 (3), p.277-282

2014

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Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Journal of non-crystalline solids, 2010-05, Vol.356 (20), p.1006-1011

2010

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Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

IEEE transactions on nuclear science, 2018-12, Vol.65 (12), p.2862-2869

2018

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NIEL Calculations for III-V Compound Semiconductors Under Electron or Proton Irradiation

IEEE transactions on nuclear science, 2022-09, Vol.69 (9), p.2056-2064

2022

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Evaluation of Ballistic Transport in III-V-Based p-Channel MOSFETs

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1053-1059

2017

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Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future

Applied surface science, 2010-07, Vol.256 (19), p.5698-5707

2010

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Enhanced Second-Harmonic Generation Using Broken Symmetry III–V Semiconductor Fano Metasurfaces

ACS photonics, 2018-05, Vol.5 (5), p.1685-1690

2018

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Characterization of wide-gap semiconductors by photothermal deflection spectroscopy

Japanese Journal of Applied Physics, 2023-11, Vol.62 (SN), p.SN1007

Sumiya, Masatomo

2023

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Kinetics of persistent photoconductivity in crystalline III-V semiconductors

Philosophical magazine letters, 2017-07, Vol.97 (7), p.257-264

2017

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Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application

IEEE electron device letters, 2017-05, Vol.38 (5), p.552-555

2017

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Novel Light Source Integration Approaches for Silicon Photonics

Laser & photonics reviews, 2017-07, Vol.11 (4), p.n/a

2017

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CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III–V Materials Defects

IEEE transactions on nanotechnology, 2016-11, Vol.15 (6), p.986-992

2016

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A model describing the pressure dependence of the band gap energy for the group III–V semiconductors

Physica. B, Condensed matter, 2016-08, Vol.494, p.71-74

2016

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Review of the mechanisms for the phonon bottleneck effect in III–V semiconductors and their application for efficient hot carrier solar cells

Progress in photovoltaics, 2022-06, Vol.30 (6), p.581-596

2022

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Moore's law in photonics

Laser & photonics reviews, 2012-01, Vol.6 (1), p.1-13

2012

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Quasi-Ballistic \Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4685-4692

2016

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Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

Surface and buried interface layer studies on challenging structures as studied by ARXPS

Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers-Part II: Application and Results

Single-photon sources with quantum dots in III–V nanowires

Beyond the Bandwidth Limit: A Tutorial on Low-Noise Amplifier Circuits for Advanced Systems Based on III-V Process

Thermal Analysis of InP Lasers Transfer Printed to Silicon Photonics Substrates

Tapered Cross Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III‐V Semiconductor Devices

Resonantly Enhanced Second-Harmonic Generation Using III–V Semiconductor All-Dielectric Metasurfaces

Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells

Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

NIEL Calculations for III-V Compound Semiconductors Under Electron or Proton Irradiation

Evaluation of Ballistic Transport in III-V-Based p-Channel MOSFETs

Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future

Enhanced Second-Harmonic Generation Using Broken Symmetry III–V Semiconductor Fano Metasurfaces

Characterization of wide-gap semiconductors by photothermal deflection spectroscopy

Kinetics of persistent photoconductivity in crystalline III-V semiconductors

Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application

Novel Light Source Integration Approaches for Silicon Photonics

CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III–V Materials Defects

A model describing the pressure dependence of the band gap energy for the group III–V semiconductors

Review of the mechanisms for the phonon bottleneck effect in III–V semiconductors and their application for efficient hot carrier solar cells

Moore's law in photonics

Quasi-Ballistic \Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs

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