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AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

Progress in photovoltaics, 2023-03, Vol.31 (3), p.230-236

2023

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Heteroepitaxy of GaAsP and GaP on GaAs and Si by low pressure hydride vapor phase epitaxy

Journal of crystal growth, 2020-06, Vol.540, p.125623, Article 125623

2020

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(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics

IEEE journal of photovoltaics, 2022-07, Vol.12 (4), p.962-967

2022

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Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

Physica status solidi. A, Applications and materials science, 2020-02, Vol.217 (3), p.n/a

2020

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Computational fluid dynamics-aided analysis of a hydride vapor phase epitaxy reactor

Journal of crystal growth, 2016-01, Vol.434, p.138-147

2016

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Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN

Journal of crystal growth, 2013-03, Vol.366, p.61-66

2013

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Faceted growth of ()‐oriented GaN domains on an SiO2‐patterned m‐plane sapphire substrate using polarity inversion

Journal of applied crystallography, 2017-02, Vol.50 (1), p.30-35

2017

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Growth of semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate

Physica Status Solidi. B: Basic Solid State Physics, 2016-01, Vol.253 (1), p.36-45

2016

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Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon

Journal of crystal growth, 2011-10, Vol.332 (1), p.27-33

2011

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Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy

Chinese physics B, 2022-06, Vol.31 (7), p.76802-541

2022

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Vertical GaN Schottky Barrier Diode With Record High Figure of Merit (1.1 GW/cm2) Fully Grown by Hydride Vapor Phase Epitaxy

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3748-3753

2023

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AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

Progress in photovoltaics, 2022-10, Vol.31 (3)

2022

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24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy

Advanced energy materials, 2023-12, Vol.14 (3)

2023

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GaN单晶的HVPE生长与掺杂进展

无机材料学报, 2023-03, Vol.38 (3), p.243-255

2023

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Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Semiconductor science and technology, 2016-09, Vol.31 (9), p.93002

2016

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Realization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase Epitaxy

physica status solidi (b), 2024-03

2024

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Homoepitaxy Growth of High‐Quality AlN Film on MOCVD AlN Template by Hydride Vapor Phase Epitaxy

physica status solidi (b), 2023-04, Vol.260 (4), p.n/a

2023

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Morphology evolution of homoepitaxial growth of aluminum nitride by hydride vapor phase epitaxy

Journal of crystal growth, 2024-02, Vol.627, p.127503, Article 127503

2024

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Light-trapping structures fabricated in situ for ultrathin III-V solar cells

Journal of applied physics, 2023-10, Vol.134 (13)

2023

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Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP

Journal of applied physics, 2020-07, Vol.128 (2)

2020

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Growth and doping of bulk GaN by hydride vapor phase epitaxyProject supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0404100 and 2016YFA0201101), the National Natural Science Foundation of China (Grant Nos. 61574164, 61704187, and 61604170), the Key Research Program of the Frontier Science of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH042), the State Key Program of the National Natural Science Foundation of China (Grant Nos. 61734008 and 114

Chinese physics B, 2020-02, Vol.29 (2)

2020

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24% Single‐Junction GaAs Solar Cell Grown Directly on Growth‐Planarized Facets Using Hydride Vapor Phase Epitaxy

Advanced energy materials, 2024-01, Vol.14 (3), p.n/a

2024

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Bulk GaN crystals grown by HVPE

Journal of crystal growth, 2009-05, Vol.311 (10), p.3011-3014

2009

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Pd-mediated mechanical stack of III–V solar cells fabricated via hydride vapor phase epitaxy

Solar energy, 2021-08, Vol.224, p.142-148

2021

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Free-standing carbon-doped semi-insulating GaN wafer grown by HVPE

Journal of crystal growth, 2021-11, Vol.573, p.126216, Article 126216

2021

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AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

Heteroepitaxy of GaAsP and GaP on GaAs and Si by low pressure hydride vapor phase epitaxy

(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics

Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

Computational fluid dynamics-aided analysis of a hydride vapor phase epitaxy reactor

Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN

Faceted growth of ()‐oriented GaN domains on an SiO2‐patterned m‐plane sapphire substrate using polarity inversion

Growth of semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate

Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon

Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy

Vertical GaN Schottky Barrier Diode With Record High Figure of Merit (1.1 GW/cm2) Fully Grown by Hydride Vapor Phase Epitaxy

AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy

GaN单晶的HVPE生长与掺杂进展

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Realization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase Epitaxy

Homoepitaxy Growth of High‐Quality AlN Film on MOCVD AlN Template by Hydride Vapor Phase Epitaxy

Morphology evolution of homoepitaxial growth of aluminum nitride by hydride vapor phase epitaxy

Light-trapping structures fabricated in situ for ultrathin III-V solar cells

Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP

24% Single‐Junction GaAs Solar Cell Grown Directly on Growth‐Planarized Facets Using Hydride Vapor Phase Epitaxy

Bulk GaN crystals grown by HVPE

Pd-mediated mechanical stack of III–V solar cells fabricated via hydride vapor phase epitaxy

Free-standing carbon-doped semi-insulating GaN wafer grown by HVPE

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