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Homoepitaxial growth of 1ˉ02 β-Ga2O3 by halide vapor phase epitaxy

Semiconductor science and technology, 2023-10, Vol.38 (10)

2023

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Epitaxial growth of (2¯01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy

Materials science in semiconductor processing, 2016-06, Vol.47, p.16-19

2016

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Hydrogen influence on electrical properties of Pt-contacted α-Ga2O3/ -Ga2O3 structures grown on patterned sapphire substrates

Journal of physics. D, Applied physics, 2020-10, Vol.53 (41)

2020

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Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy

Applied physics express, 2022-11, Vol.15 (11), p.115501

2022

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Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

IEEE electron device letters, 2018-06, Vol.39 (6), p.869-872

2018

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Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy

Chinese physics B, 2022-06, Vol.31 (7), p.76802-541

2022

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High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga's Figure of Merit Over 1 GW/cm2

IEEE electron device letters, 2021-08, Vol.42 (8), p.1140-1143

2021

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Probing room temperature indirect and minimum direct band gaps of h-BN

Applied physics express, 2024-09, Vol.17 (9), p.91001

2024

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Estimation of point defects content in bulk GaN

Journal of luminescence, 2022-05, Vol.245, p.118779, Article 118779

2022

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Hydrogen sensors based on Pt/α-Ga2O3:Sn/Pt structures

Sensors and actuators. B, Chemical, 2022-08, Vol.364, p.131904, Article 131904

2022

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Optimization of the growth temperature of α-Ga2O3 epilayers grown by halide vapor phase epitaxy

Journal of alloys and compounds, 2019-01, Vol.773, p.631-635

2019

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Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11–22) AlN film grown by HVPE

Frontiers in physics, 2022-11, Vol.10

2022

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AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

Progress in photovoltaics, 2022-10, Vol.31 (3)

2022

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24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy

Advanced energy materials, 2023-12, Vol.14 (3)

2023

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Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Semiconductor science and technology, 2016-09, Vol.31 (9), p.93002

2016

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Hydride vapor phase epitaxial growth of AlGaN

Applied physics express, 2022-08, Vol.15 (8), p.85504

2022

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HVPE fabrication of GaN sub-micro pillars on preliminarily treated Si(001) substrate

Optical materials, 2021-07, Vol.117, p.111130, Article 111130

2021

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Vertical β-Ga₂O₃ Power Transistors: A Review

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3925-3937

2020

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Growth and doping of bulk GaN by hydride vapor phase epitaxyProject supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0404100 and 2016YFA0201101), the National Natural Science Foundation of China (Grant Nos. 61574164, 61704187, and 61604170), the Key Research Program of the Frontier Science of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH042), the State Key Program of the National Natural Science Foundation of China (Grant Nos. 61734008 and 114

Chinese physics B, 2020-02, Vol.29 (2)

2020

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Defect dependence of electrical characteristics of β-Ga2O3 Schottky barrier diodes grown with hydride vapor phase epitaxy

Materials science in semiconductor processing, 2023-11, Vol.167, p.107787, Article 107787

2023

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Effect of oxygen on the crystallinity and defect state of AlxGa1−xN epilayers

Journal of materials research and technology, 2023-01, Vol.22, p.938-946

2023

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Growth and Properties of Intentionally Carbon‐Doped GaN Layers

Crystal research and technology (1979), 2020-02, Vol.55 (2), p.n/a

2020

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Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

Applied physics express, 2020-06, Vol.13 (6), p.61007

2020

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Effect of H2 addition on growth rate and surface morphology of GaN(0001) grown by halide-vapor-phase epitaxy using GaCl3

Japanese Journal of Applied Physics, 2023-02, Vol.62 (2), p.020903

2023

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Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE Project supported by the National Key R&D Program of China (Grant Nos. 2017YFB0404100 and 2017YFB0403000), the National Natural Science Foundation of China (Grant No. 61704187), and the Key Research Program of the Frontier Science of the Chinese Academy of Sciences (Grant No. QYZDB-SSWSLH042)

Chinese physics B, 2021-06, Vol.30 (6)

2021

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Homoepitaxial growth of 1ˉ02 β-Ga2O3 by halide vapor phase epitaxy

Epitaxial growth of (2¯01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy

Hydrogen influence on electrical properties of Pt-contacted α-Ga2O3/ -Ga2O3 structures grown on patterned sapphire substrates

Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy

Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy

High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga's Figure of Merit Over 1 GW/cm2

Probing room temperature indirect and minimum direct band gaps of h-BN

Estimation of point defects content in bulk GaN

Hydrogen sensors based on Pt/α-Ga2O3:Sn/Pt structures

Optimization of the growth temperature of α-Ga2O3 epilayers grown by halide vapor phase epitaxy

Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11–22) AlN film grown by HVPE

AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Hydride vapor phase epitaxial growth of AlGaN

HVPE fabrication of GaN sub-micro pillars on preliminarily treated Si(001) substrate

Vertical β-Ga₂O₃ Power Transistors: A Review

Defect dependence of electrical characteristics of β-Ga2O3 Schottky barrier diodes grown with hydride vapor phase epitaxy

Effect of oxygen on the crystallinity and defect state of AlxGa1−xN epilayers

Growth and Properties of Intentionally Carbon‐Doped GaN Layers

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

Effect of H2 addition on growth rate and surface morphology of GaN(0001) grown by halide-vapor-phase epitaxy using GaCl3

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