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Design and simulation of optically controlled field effect transistors

Physica status solidi. C, 2014-01, Vol.11 (1), p.81-84

2014

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Enhanced Si-Ge interdiffusion in high phosphorus-doped germanium on silicon

Semiconductor science and technology, 2015-10, Vol.30 (10), p.105008

2015

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Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations

Electrochimica acta, 2024-07, Vol.493, p.144416, Article 144416

2024

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Achieving porous germanium from both p- and n-type epitaxial Ge-on-Si via bipolar potentiostatic etching

Electrochimica acta, 2023-12, Vol.470, p.143307, Article 143307

2023

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Electroluminescence of germanium LEDs on silicon: Influence of antimony doping

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1686-1691

2014

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CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes

ACS photonics, 2021-07, Vol.8 (7), p.2166-2173

2021

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The dual-injection Ge-on-Si photodetectors with high saturation power by optimizing light field distribution

Optics communications, 2021-02, Vol.480, p.126467, Article 126467

2021

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Hot-carrier induced degradation of Ge/STI interfaces in Ge-on-Si junction devices

Solid-state electronics, 2024-04, Vol.214, p.108867, Article 108867

2024

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An accurate circuit model of Ge/Si single photon avalanche diode

Solid-state electronics, 2023-12, Vol.210, p.108786, Article 108786

2023

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High-Performance Cascaded Surface-Illuminated Ge-on-Si APD Array

IEEE electron device letters, 2023-02, Vol.44 (2), p.205-208

2023

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Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes

IEEE photonics technology letters, 2023-09, Vol.35 (17), p.1-1

2023

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A drastic increase in critical thickness for strained SiGe by growth on mesa-patterned Ge-on-Si

Applied physics express, 2021-02, Vol.14 (2), p.25502

2021

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Trapping threading dislocations in germanium trenches on silicon wafer

Journal of crystal growth, 2020-08, Vol.543, p.125701, Article 125701

2020

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III-V Heterostructure Grown on 300mm Ge/Si Wafer for Large-Scale Fabrication of Red μ-LEDs

IEEE photonics technology letters, 2023-01, Vol.35 (2), p.101-104

2023

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Laser-Crystallized Epitaxial Germanium on Silicon-Based Near-infrared Photodetector

IEEE sensors journal, 2022-06, Vol.22 (12), p.1-1

2022

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Fabrication and characterization of single junction GaAs solar cells on Si with As-doped Ge buffer

Solar energy materials and solar cells, 2017-12, Vol.172, p.140-144

2017

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Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer

Semiconductor science and technology, 2018-10, Vol.33 (10), p.104004

2018

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High Performance Ge-on-Si Photodetector With Optimized Light Field Distribution by Dual-Injection

IEEE photonics journal, 2022-04, Vol.14 (2), p.1-4

2022

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Dual-Band Ge-on-Si Photodetector Array With Custom, Integrated Readout Electronics

IEEE sensors journal, 2022-02, Vol.22 (4), p.3172-3180

2022

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Configuration of the active region for the Ge-on-Si photodetector based on carrier mobility

Frontiers in physics, 2023-06, Vol.11

2023

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Experimental Demonstration of Germanium-on-Silicon Slot Waveguides at Mid-Infrared Wavelength

IEEE photonics journal, 2022-06, Vol.14 (3), p.1-9

2022

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Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge3H8, Ge4H10)

Chemistry of materials, 2012-05, Vol.24 (9), p.1619-1628

2012

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Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si

IEICE transactions on electronics, 2008, Vol.E91-C (2), p.181-186

2008

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Two-Step Liquid Phase Crystallized Germanium-Based Photodetector for Near-Infrared Applications

IEEE sensors journal, 2020-05, Vol.20 (9), p.4660-4666

2020

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Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector-Part II: Large Bias Operation

IEEE access, 2024, Vol.12, p.119238-119245

2024

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Design and simulation of optically controlled field effect transistors

Enhanced Si-Ge interdiffusion in high phosphorus-doped germanium on silicon

Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations

Achieving porous germanium from both p- and n-type epitaxial Ge-on-Si via bipolar potentiostatic etching

Electroluminescence of germanium LEDs on silicon: Influence of antimony doping

CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes

The dual-injection Ge-on-Si photodetectors with high saturation power by optimizing light field distribution

Hot-carrier induced degradation of Ge/STI interfaces in Ge-on-Si junction devices

An accurate circuit model of Ge/Si single photon avalanche diode

High-Performance Cascaded Surface-Illuminated Ge-on-Si APD Array

Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes

A drastic increase in critical thickness for strained SiGe by growth on mesa-patterned Ge-on-Si

Trapping threading dislocations in germanium trenches on silicon wafer

III-V Heterostructure Grown on 300mm Ge/Si Wafer for Large-Scale Fabrication of Red μ-LEDs

Laser-Crystallized Epitaxial Germanium on Silicon-Based Near-infrared Photodetector

Fabrication and characterization of single junction GaAs solar cells on Si with As-doped Ge buffer

Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer

High Performance Ge-on-Si Photodetector With Optimized Light Field Distribution by Dual-Injection

Dual-Band Ge-on-Si Photodetector Array With Custom, Integrated Readout Electronics

Configuration of the active region for the Ge-on-Si photodetector based on carrier mobility

Experimental Demonstration of Germanium-on-Silicon Slot Waveguides at Mid-Infrared Wavelength

Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge3H8, Ge4H10)

Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si

Two-Step Liquid Phase Crystallized Germanium-Based Photodetector for Near-Infrared Applications

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector-Part II: Large Bias Operation

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