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A Hybrid GaN HEMT Model Merging Artificial Neural Networks and ASM-HEMT for Parameter Precision and Scalability

IEEE transactions on electron devices, 2024-10, p.1-9

2024

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Modelling and mitigating oscillation in E-mode GaN HEMT: A simulation-based approach to parasitic inductance optimization

Microelectronics and reliability, 2024-01, Vol.152, p.115293, Article 115293

2024

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Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

Optical materials, 2024-04, Vol.150, p.115135, Article 115135

2024

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Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.95-105

2019

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Low Parasitic-Inductance Packaging of a 650 V/150 A Half-Bridge Module Using Enhancement-Mode Gallium-Nitride High Electron Mobility Transistors

IEEE transactions on industrial electronics (1982), 2023-01, Vol.70 (1), p.344-351

2023

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Physics Based SPICE Modeling of Dynamic On-state Resistance of p-GaN HEMTs

IEEE transactions on power electronics, 2023-07, Vol.38 (7), p.1-4

2023

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Wide Bandgap Semiconductor Based Micro/Nano Devices

Seo, Jung-Hun

2019

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Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology

Microelectronics and reliability, 2021-11, Vol.126, p.114291, Article 114291

2021

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Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs

IEEE transactions on industrial electronics (1982), 2017-11, Vol.64 (11), p.9012-9022

2017

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Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

Physica status solidi. A, Applications and materials science, 2011-02, Vol.208 (2), p.434-438

2011

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A New Charge-Based Analytical Model for the Gate Current in GaN HEMTs

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2210-2213

2022

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Physical understanding of a normally off p-GaN/AlGaN/GaN HEMT gate stack and a review of VTH measurement techniques

Journal of physics. D, Applied physics, 2025-01, Vol.58 (2)

2025

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Compact Modeling of Static and Transient Effects of Buffer Traps in GaN HEMTs

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.999-1005

2022

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Fast System to measure the dynamic on-resistance of on-wafer 600 V normally off GaN HEMTs in hard-switching application conditions

IET power electronics, 2020-08, Vol.13 (11), p.2390-2397

2020

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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Verzellesi, Giovanni

2022

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Symmetric Three-Way Doherty Power Amplifier for High Efficiency and Linearity

IEEE transactions on circuits and systems. II, Express briefs, 2017-08, Vol.64 (8), p.862-866

2017

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Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor

Japanese Journal of Applied Physics, 2020-11, Vol.59 (11), p.111001

2020

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InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments

Sensors and actuators. A. Physical., 2017-08, Vol.263, p.216-223

2017

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Implications of Various Charge Sources in AlGaN/GaN Epi-Stack on the Drain & Gate Connected Field Plate Design in HEMTs

IEEE access, 2022, Vol.10, p.1-1

2022

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Self-consistent electro-thermal simulations of AlGaN GaN diodes by means of Monte Carlo method

Semiconductor science and technology, 2015-03, Vol.30 (3), p.35001

2015

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Advanced SPICE Model for GaN HEMTs (ASM-HEMT): A New Industry-Standard Compact Model for GaN-Based Power and RF Circuit Design

Khandelwal, Sourabh

1st Edition 2022, 2021

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High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 V

IEEE electron device letters, 2024-10, p.1-1

2024

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A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization

Energies (Basel), 2021-06, Vol.14 (12), p.3477

2021

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Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

Electronics (Basel), 2024-02, Vol.13 (3), p.653

2024

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Paralleled Operation of High-Voltage Cascode GaN HEMTs

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.815-823

2016

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A Hybrid GaN HEMT Model Merging Artificial Neural Networks and ASM-HEMT for Parameter Precision and Scalability

Modelling and mitigating oscillation in E-mode GaN HEMT: A simulation-based approach to parasitic inductance optimization

Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model

Low Parasitic-Inductance Packaging of a 650 V/150 A Half-Bridge Module Using Enhancement-Mode Gallium-Nitride High Electron Mobility Transistors

Physics Based SPICE Modeling of Dynamic On-state Resistance of p-GaN HEMTs

Wide Bandgap Semiconductor Based Micro/Nano Devices

Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology

Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs

Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

A New Charge-Based Analytical Model for the Gate Current in GaN HEMTs

Physical understanding of a normally off p-GaN/AlGaN/GaN HEMT gate stack and a review of VTH measurement techniques

Compact Modeling of Static and Transient Effects of Buffer Traps in GaN HEMTs

Fast System to measure the dynamic on-resistance of on-wafer 600 V normally off GaN HEMTs in hard-switching application conditions

Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Symmetric Three-Way Doherty Power Amplifier for High Efficiency and Linearity

Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor

InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments

Implications of Various Charge Sources in AlGaN/GaN Epi-Stack on the Drain & Gate Connected Field Plate Design in HEMTs

Self-consistent electro-thermal simulations of AlGaN GaN diodes by means of Monte Carlo method

Advanced SPICE Model for GaN HEMTs (ASM-HEMT): A New Industry-Standard Compact Model for GaN-Based Power and RF Circuit Design

High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 V

A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

Paralleled Operation of High-Voltage Cascode GaN HEMTs

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