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Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5542-5548

2022

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Ga-Sn-O thin film, mist-CVD method, and analog memristor: promising proposals for neuromorphic systems

IEICE transactions on electronics, 2024, Article 2024ECS6003

2024

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Enhanced electrical properties of In-Ga-Sn-O thin films at low-temperature annealing

Ceramics international, 2022-04, Vol.48 (7), p.9817-9823

2022

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ZrAlOx by Spray Pyrolysis as Gas Barrier for Oxide TFTs on Flexible Substrates

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.867-872

2024

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Low-temperature high-performance In-Ga-Sn-O thin-film transistors with Al2O3 grown by a facile dual-atomic layer deposition

Journal of alloys and compounds, 2021-09, Vol.875, p.160053, Article 160053

2021

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Low temperature (<150 °C) annealed amorphous indium-gallium-tin oxide (IGTO) thin-film for flash memory application

Applied surface science, 2022-12, Vol.605, p.154614, Article 154614

2022

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Influence of oxygen-related defects on In-Ga-Sn-O semiconductor due to plasma-enhanced atomic layer deposition of Al2O3 for low-temperature thin-film transistor in terms of electrical properties

Journal of alloys and compounds, 2022-10, Vol.918, p.165649, Article 165649

2022

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Thermoelectric Effect of Ga-Sn-O Thin Films for Internet-of-Things Application

IEICE transactions on electronics, 2024-01, Vol.E107.C (1), p.18-21, Article 2023ECS6005

2024

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Amorphous Ga–Sn–O thin-film crosspoint-type spike-timing-dependent-plasticity device

Japanese Journal of Applied Physics, 2021-07, Vol.60 (7), p.78003

2021

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Improvement in Short-Channel Effects and Bias-Stress Stability of Vertical Thin-Film Transistors Using Atomic-Layer-Deposited In–Ga–Sn–O Channels

ACS applied electronic materials, 2023-12, Vol.5 (12), p.6668-6676

2023

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8.3: Invited Paper: GTO‐TFT deposited using Mist‐CVD

SID International Symposium Digest of technical papers, 2021-08, Vol.52 (S2), p.142-144

2021

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Ga-Sn-O Thin Film Memristor and Analog Plasticity Characteristic

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Switchover behavior between long-term potentiation and depression in amorphous Ga–Sn–O thin-film spike-timing-dependent-plasticity device

Japanese Journal of Applied Physics, 2022-05, Vol.61 (5), p.58002

2022

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Analysis of Carrier Mobility in Amorphous Metal-Oxide Semiconductor Thin-Film Transistor Using Hall Effect

IEEE electron device letters, 2020-07, Vol.41 (7), p.1025-1028

2020

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Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness

Electronics (Basel), 2020-12, Vol.9 (12), p.2196

2020

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Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

Materials, 2019-10, Vol.12 (19), p.3236

2019

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Room-temperature fabrication of a Ga-Sn-O thin-film transistor

Solid-state electronics, 2017-08, Vol.134, p.19-21

2017

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Thermoelectric Generator using Amorphous Ga-Sn-O Thin-Film Device

2022 IEEE International Conference on Consumer Electronics (ICCE), 2022, p.1-5

2022

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P‐1: Fabrication of a Short‐Channel Oxide TFT Utilizing the Resistance‐Reduction Phenomenon in In‐Ga‐Sn‐O

SID International Symposium Digest of technical papers, 2017-05, Vol.48 (1), p.1227-1230

2017

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49.2: Invited Paper: Research and Applications of Amorphous Metal‐Oxide Semiconductor Devices ‐ In‐Ga‐Zn‐O and Ga‐Sn‐O Thin‐Film Devices

SID International Symposium Digest of technical papers, 2018-04, Vol.49 (S1), p.512-515

2018

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High Mobility Oxide TFT Based on In-rich In-Ga-Sn-O Semiconductors with Nanocrystalline Structures

Proceedings of the International Display Workshops, 2019, p.458

2019

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Thermoelectric Conversion Devise Using Ga-Sn-O Thin Film Prepared by Mist CVD Method

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), 2018, p.1-2

2018

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Multilayer Cross-Point Synapses Using Ga-Sn-O Thin Films for Neural Network

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), 2018, p.1-2

2018

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Evaluation of Ga-Sn-O Thermoelectric Device

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), 2018, p.1-2

2018

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Evaluation of GTO Film Deposited Using mistCVD Method

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), 2018, p.1-2

2018

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Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions

Ga-Sn-O thin film, mist-CVD method, and analog memristor: promising proposals for neuromorphic systems

Enhanced electrical properties of In-Ga-Sn-O thin films at low-temperature annealing

ZrAlOx by Spray Pyrolysis as Gas Barrier for Oxide TFTs on Flexible Substrates

Low-temperature high-performance In-Ga-Sn-O thin-film transistors with Al2O3 grown by a facile dual-atomic layer deposition

Low temperature (<150 °C) annealed amorphous indium-gallium-tin oxide (IGTO) thin-film for flash memory application

Influence of oxygen-related defects on In-Ga-Sn-O semiconductor due to plasma-enhanced atomic layer deposition of Al2O3 for low-temperature thin-film transistor in terms of electrical properties

Thermoelectric Effect of Ga-Sn-O Thin Films for Internet-of-Things Application

Amorphous Ga–Sn–O thin-film crosspoint-type spike-timing-dependent-plasticity device

Improvement in Short-Channel Effects and Bias-Stress Stability of Vertical Thin-Film Transistors Using Atomic-Layer-Deposited In–Ga–Sn–O Channels

8.3: Invited Paper: GTO‐TFT deposited using Mist‐CVD

Ga-Sn-O Thin Film Memristor and Analog Plasticity Characteristic

Switchover behavior between long-term potentiation and depression in amorphous Ga–Sn–O thin-film spike-timing-dependent-plasticity device

Analysis of Carrier Mobility in Amorphous Metal-Oxide Semiconductor Thin-Film Transistor Using Hall Effect

Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness

Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

Room-temperature fabrication of a Ga-Sn-O thin-film transistor

Thermoelectric Generator using Amorphous Ga-Sn-O Thin-Film Device

P‐1: Fabrication of a Short‐Channel Oxide TFT Utilizing the Resistance‐Reduction Phenomenon in In‐Ga‐Sn‐O

49.2: Invited Paper: Research and Applications of Amorphous Metal‐Oxide Semiconductor Devices ‐ In‐Ga‐Zn‐O and Ga‐Sn‐O Thin‐Film Devices

High Mobility Oxide TFT Based on In-rich In-Ga-Sn-O Semiconductors with Nanocrystalline Structures

Thermoelectric Conversion Devise Using Ga-Sn-O Thin Film Prepared by Mist CVD Method

Multilayer Cross-Point Synapses Using Ga-Sn-O Thin Films for Neural Network

Evaluation of Ga-Sn-O Thermoelectric Device

Evaluation of GTO Film Deposited Using mistCVD Method

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