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Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2878-2887

2012

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CMOS Demodulation Image Sensor for Nanosecond Optical Waveform Analysis

IEEE sensors journal, 2013-05, Vol.13 (5), p.1487-1497

2013

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3D device-level simulation of charge separation from sidewall in vertical transfer gate pinned photodiode pixels for noise mitigation

IET circuits, devices & systems, 2020-08, Vol.14 (5), p.619-622

2020

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CMOS image sensors comprised of floating diffusion driving pixels with buried photodiode

IEEE journal of solid-state circuits, 2004-12, Vol.39 (12), p.2408-2416

2004

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Multichip CMOS Image Sensor Structure for Flash Image Acquisition

2019 International 3D Systems Integration Conference (3DIC), 2019, p.1-6

Hagiwara, Yoshiaki

2019

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Invention and Historical Development Efforts of Pinned Buried Photodiode

2021 International Conference on Electrical, Computer and Energy Technologies (ICECET), 2021, p.1-6

Hagiwara, Yoshiaki

2021

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Pinned Buried PIN Photodiode Type Solar Cell

2021 International Conference on Electrical, Computer and Energy Technologies (ICECET), 2021, p.1-6

Hagiwara, Yoshiaki

2021

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CMOS Neuromorphic Optical Sensor Chip With Color Change-Intensity Change Disambiguation (CCICD)

IEEE sensors journal, 2009-06, Vol.9 (6), p.689-696

2009

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Simulation and Device Characterization of the P+PN+P Junction Type Pinned Photodiode and Schottky Barrier Photodiode

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2020, p.1-4

Hagiwara, Yoshiaki

2020

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Enhanced Ratiometric Detection using a Buried Dual Junction Diode for Wearable Optofluidic Biosensing Application

2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), 2019, p.2274-2277

2019

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HgCdTe buried multi-junction photodiodes fabricated by the liquid phase epitaxy

Infrared physics & technology, 2002-06, Vol.43 (3), p.157-163

2002

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First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

IEEE journal of selected topics in quantum electronics, 2019-09, Vol.25 (5), p.1-6

2019

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Ultralow Optical and Electrical Losses via Metal‐Assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes

Advanced optical materials, 2020-08, Vol.8 (15), p.n/a

2020

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Photoelectric Characteristic Evaluation of Different Structured UTBB MOSFETs

IEEE transactions on electron devices, 2020-05, Vol.67 (5), p.1919-1923

2020

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Investigation of parameters of new MAPD-3NM silicon photomultipliers

Journal of instrumentation, 2022-01, Vol.17 (1), p.C01001

2022

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1T semi-floating gate image sensor with enhanced quantum efficiency and high response speed

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGE06

2020

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Performance of silicon photomultipliers at low temperature

Journal of instrumentation, 2020-03, Vol.15 (3), p.C03003-C03003

2020

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Intercolor-Filter Crosstalk Model for Image Sensors With Color Filter Array

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2531-2536

2018

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Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths

Electronics letters, 2016-09, Vol.52 (20), p.1707-1708

2016

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4.6\mu \mathrm Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, p.135-138

2021

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Structural optimization and analysis of GaAs buried-gate OPFET for visible-light communication

Optical and quantum electronics, 2020-12, Vol.52 (12), Article 512

2020

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Light-Trapping-Enhanced Photodetection in Ge/Si Quantum Dot Photodiodes Containing Microhole Arrays with Different Hole Depths

Nanomaterials (Basel, Switzerland), 2022-08, Vol.12 (17), p.2993

2022

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10-Gb/s Planar InGaAs P-I-N Photodetectors

IEEE sensors journal, 2010-10, Vol.10 (10), p.1559-1563

2010

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Pixel circuit design for an accumulation mode BDJ APS in a 0.18µm CMOS technology

2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2020, p.1-4

2020

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4.6µm Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera

ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021, p.135-138

2021

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Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

CMOS Demodulation Image Sensor for Nanosecond Optical Waveform Analysis

3D device-level simulation of charge separation from sidewall in vertical transfer gate pinned photodiode pixels for noise mitigation

CMOS image sensors comprised of floating diffusion driving pixels with buried photodiode

Multichip CMOS Image Sensor Structure for Flash Image Acquisition

Invention and Historical Development Efforts of Pinned Buried Photodiode

Pinned Buried PIN Photodiode Type Solar Cell

CMOS Neuromorphic Optical Sensor Chip With Color Change-Intensity Change Disambiguation (CCICD)

Simulation and Device Characterization of the P+PN+P Junction Type Pinned Photodiode and Schottky Barrier Photodiode

Enhanced Ratiometric Detection using a Buried Dual Junction Diode for Wearable Optofluidic Biosensing Application

HgCdTe buried multi-junction photodiodes fabricated by the liquid phase epitaxy

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Ultralow Optical and Electrical Losses via Metal‐Assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes

Photoelectric Characteristic Evaluation of Different Structured UTBB MOSFETs

Investigation of parameters of new MAPD-3NM silicon photomultipliers

1T semi-floating gate image sensor with enhanced quantum efficiency and high response speed

Performance of silicon photomultipliers at low temperature

Intercolor-Filter Crosstalk Model for Image Sensors With Color Filter Array

Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths

4.6\mu \mathrm Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera

Structural optimization and analysis of GaAs buried-gate OPFET for visible-light communication

Light-Trapping-Enhanced Photodetection in Ge/Si Quantum Dot Photodiodes Containing Microhole Arrays with Different Hole Depths

10-Gb/s Planar InGaAs P-I-N Photodetectors

Pixel circuit design for an accumulation mode BDJ APS in a 0.18µm CMOS technology

4.6µm Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera

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