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In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon-germanium heterojunction bipolar transistors

Radiation effects and defects in solids, 2013-08, Vol.168 (7-8), p.620-624

2013

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Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

Journal of applied physics, 2015-04, Vol.117 (16)

2015

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Precision calculation of blackbody radiation shifts for optical frequency metrology

Physical review letters, 2011-09, Vol.107 (14), p.143006-143006, Article 143006

2011

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Evaluation of adsorptive performance of Mn-doped Fe2O4 nanoparticles loaded on activated carbon in removal of boron ions from synthetic wastewater

Biomass conversion and biorefinery, 2023-08

2023

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Generation of Boron-Rich Plasma by a Pulsed Vacuum Arc With Lanthanum Hexaboride Cathode

IEEE transactions on plasma science, 2017-08, Vol.45 (8), p.2070-2074

2017

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Synthesis of the effective flame retardant via modification of epoxy resin with phenylboronic acid

Journal of macromolecular science. Part A, Pure and applied chemistry, 2022-06, Vol.59 (6), p.411-420

2022

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Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2023-04, Vol.537, p.65-70

2023

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g-Factor of heavy ions: a new access to the fine structure constant

Physical review letters, 2006-06, Vol.96 (25), p.253002-253002, Article 253002

2006

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Hylleraas-configuration-interaction nonrelativistic energies for the {sup 1}S ground states of the beryllium isoelectronic sequence

The Journal of chemical physics, 2014-06, Vol.140 (22)

2014

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Investigation of charge transfer and ionization in He-like systems (Li+, Be2+, B3+, C4+, N5+, O6+)-hydrogen atom collisions in Debye plasmas

Physics of plasmas, 2013-02, Vol.20 (2)

2013

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Isotope shifts in beryllium-, boron-, carbon-, and nitrogen-like ions from relativistic configuration interaction calculations

Atomic data and nuclear data tables, 2014-09, Vol.100 (5), p.1197-1249

2014

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Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted terminationProject supported by the National Key R&D Program of China (Grant No. 2017YFB0404100) and Science and Technology Planning Project of Guangdong Province, China (Grant No. 2017B010112001)

Chinese physics B, 2020-03, Vol.29 (4)

2020

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Boron ion beam generation utilizing lanthanum hexaboride cathodes: Comparison of vacuum arc and planar magnetron glow

Review of scientific instruments, 2016-02, Vol.87 (2)

2016

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Depth profiling of interfacial fluctuation with nanometer order in ultrathin silicon-on-insulator structure by classical Rutherford backscattering using 10B ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-07, Vol.450, p.118-121

2019

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Synthesis, characterisation and in vitro evaluation of sol–gel derived SiO2–P2O5–CaO–B2O3 bioactive system

Ceramics international, 2014-08, Vol.40 (7), p.9517-9524

2014

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Long-range effect in ion-implanted polymers

Vacuum, 2022-06, Vol.200, p.111038, Article 111038

2022

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Turning the optical properties of microcrystalline diamond films by boron ion implantation and annealing

Functional diamond (Online), 2024-12, Vol.4 (1)

2024

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Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F

Journal of applied physics, 2016-07, Vol.120 (1)

2016

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Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation

Semiconductors (Woodbury, N.Y.), 2018-07, Vol.52 (7), p.843-848

2018

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Hyperfine structures and Landé g{sub J}-factors for n=2 states in beryllium-, boron-, carbon-, and nitrogen-like ions from relativistic configuration interaction calculations

Atomic data and nuclear data tables, 2014-09, Vol.100 (5)

2014

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Accurate evaluations of the field shift and lowest-order QED correction for the ground 1{sup 1}S−states of some light two-electron ions

The Journal of chemical physics, 2014-09, Vol.141 (10)

2014

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Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

Journal of applied physics, 2015-11, Vol.118 (20)

2015

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Synthesis and up-conversion luminescence of Er(3+) and Y b(3+) codoped nanocrystalline tetra- (KLaP4O12) and pentaphosphates (LaP5O14)

The Journal of chemical physics, 2015-09, Vol.143 (9), p.094701-094701

2015

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Photoluminescence of Amorphous SiO{sub 2} with Implanted Ar{sup +} Ions

Physics of the solid state, 2019-04, Vol.61 (4)

2019

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Evidence for strong inversed shear of toroidal rotation at the edge-transport barrier in the ASDEX upgrade

Physical review letters, 2009-01, Vol.102 (2), p.025001-025001, Article 025001

2009

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In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon-germanium heterojunction bipolar transistors

Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

Precision calculation of blackbody radiation shifts for optical frequency metrology

Evaluation of adsorptive performance of Mn-doped Fe2O4 nanoparticles loaded on activated carbon in removal of boron ions from synthetic wastewater

Generation of Boron-Rich Plasma by a Pulsed Vacuum Arc With Lanthanum Hexaboride Cathode

Synthesis of the effective flame retardant via modification of epoxy resin with phenylboronic acid

Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

g-Factor of heavy ions: a new access to the fine structure constant

Hylleraas-configuration-interaction nonrelativistic energies for the {sup 1}S ground states of the beryllium isoelectronic sequence

Investigation of charge transfer and ionization in He-like systems (Li+, Be2+, B3+, C4+, N5+, O6+)-hydrogen atom collisions in Debye plasmas

Isotope shifts in beryllium-, boron-, carbon-, and nitrogen-like ions from relativistic configuration interaction calculations

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted terminationProject supported by the National Key R&D Program of China (Grant No. 2017YFB0404100) and Science and Technology Planning Project of Guangdong Province, China (Grant No. 2017B010112001)

Boron ion beam generation utilizing lanthanum hexaboride cathodes: Comparison of vacuum arc and planar magnetron glow

Depth profiling of interfacial fluctuation with nanometer order in ultrathin silicon-on-insulator structure by classical Rutherford backscattering using 10B ions

Synthesis, characterisation and in vitro evaluation of sol–gel derived SiO2–P2O5–CaO–B2O3 bioactive system

Long-range effect in ion-implanted polymers

Turning the optical properties of microcrystalline diamond films by boron ion implantation and annealing

Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation

Hyperfine structures and Landé g{sub J}-factors for n=2 states in beryllium-, boron-, carbon-, and nitrogen-like ions from relativistic configuration interaction calculations

Accurate evaluations of the field shift and lowest-order QED correction for the ground 1{sup 1}S−states of some light two-electron ions

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

Synthesis and up-conversion luminescence of Er(3+) and Y b(3+) codoped nanocrystalline tetra- (KLaP4O12) and pentaphosphates (LaP5O14)

Photoluminescence of Amorphous SiO{sub 2} with Implanted Ar{sup +} Ions

Evidence for strong inversed shear of toroidal rotation at the edge-transport barrier in the ASDEX upgrade

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