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Design and Fabrication of MEMS Gyroscopes on the Silicon-on-insulator Substrate with Decoupled Oscillation Modes

Chinese journal of mechanical engineering, 2010 (1), p.16-20

XIE Jianbing YUAN Weizheng CHANG Honglong

2010

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练好基本功，加强高性能器件研究-国家自然科学基金2009年半导体科学领域申请项目概况分析

Journal of semiconductors, 2010 (2), p.103-108

何杰

2010

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Silicon-on-Insulator-Based Broadband 1 × 3 Adiabatic Splitter with Simultaneous Tapering of Velocity and Coupling

Chinese physics letters, 2016-09, Vol.33 (9), p.39-42

巩源浩李智勇余金中俞育德

2016

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Total Ionizing Dose Response of Different Length Devices in 0.13μm Partially Depleted Silicon-on-Insulator Technology

Chinese physics letters, 2017-07, Vol.34 (8), p.144-147, Article 088501

张梦映胡志远张正选樊双戴丽华刘小年宋雷

2017

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Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

Chinese physics B, 2014-08, Vol.23 (8), p.631-635

2014

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Beam splitter based on Bragg grating-assisted coupler

Chinese optics letters, 2015-01, Vol.13 (s1), p.S12501-312504

2015

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Analytical modeling of subthreshold current and subthreshold swing of Gaussian- doped strained-Si-on-insulator MOSFETs

Journal of semiconductors, 2014-08, Vol.35 (8), p.52-59

2014

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Partial-SOI high voltage laterally double-diffused MOS with a partially buried n＋-layer

Chinese physics B, 2014-06, Vol.23 (6), p.468-472

胡盛东武星河朱志金晶晶陈银晖

2014

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Strain analysis of free-standing strained silicon-on-insulator nanomembrane

Chinese physics B, 2015-03, Vol.24 (3), p.284-288

孙高迪董林玺薛忠营陈达郭庆磊母志强

2015

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2.45 GHz 0.8 mW voltage-controlled ring oscillator （VCRO） in 28 nm fully depleted silicon-on-insulator （FDSOI） technology

材料科学前沿：英文版, 2015 (2), p.156-162

Gilles JACQUEMOD Alexandre FONSECA Emeric de FOUCAULD Yves LEDUC Philippe LORENZINI

2015

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Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

Chinese physics B, 2014-09, Vol.23 (9), p.154-160

彭超胡志远宁冰旭黄辉祥樊双张正远毕大炜恩云飞

2014

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A high linearity X-band SO1 CMOS digitally-controlled phase shifter

半导体学报：英文版, 2015 (6), p.115-122

陈亮陈新宇张有涛李智群杨磊

2015

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Analytical modeling and simulation of germanium single gate silicon on insulator TFET

Journal of semiconductors, 2014-03, Vol.35 (3), p.25-28

2014

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A High Performance Silicon-on-Insulator LDMOSTT Using Linearly Increasing Thickness Techniques

Chinese physics letters, 2010-06, Vol.27 (6), p.179-182, Article 067301

2010

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Gate-to-body tunneling current model for silicon-on-insulator MOSFETs

Chinese physics B, 2013-10, Vol.22 (10), p.604-607

伍青青陈静罗杰馨吕凯余涛柴展王曦

2013

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Wafer.Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

Chinese physics letters, 2010, Vol.27 (9), p.107-110

肖希朱宇徐海华周亮胡应涛李智勇李运涛俞育德余金中

2010

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Compact all-optical differential-equation solver based on silicon microring resonator

Frontiers of Optoelectronics (Online), 2012-03, Vol.5 (1), p.99-106

2012

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Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate

Optoelectronics letters, 2014-05, Vol.10 (3), p.213-215

陈荔群陈阳华李成

2014

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A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer

Chinese physics B, 2010-07, Vol.19 (7), p.530-536, Article 077306

罗小蓉王元刚邓浩 Florin Udrea

2010

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基于衬底偏压的PSOILDMOS击穿特性研究

电力电子技术, 2013, Vol.47 (12), p.5-7

石艳梅姚素英刘继芝丁燕红

2013

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A large bandwidth photonic delay line using passive cascaded silicon-on-insulator microring resonators

Chinese physics B, 2011-07, Vol.20 (7), p.216-222, Article 074208

胡应涛肖希李智勇李运涛樊中朝韩伟华俞育德余金中

2011

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The breakdown mechanism of a high-side pLDMOS based on a thin-layer silicon-on-insulator structure

Chinese physics B, 2012, Vol.21 (1), p.524-528

赵远远乔明王伟宾王猛张波

2012

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Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

Chinese physics B, 2012-05, Vol.21 (5), p.473-478, Article 056602

罗杰馨陈静周建华伍青青柴展余涛王曦

2012

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Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n^＋-layer

Chinese physics B, 2012-02, Vol.21 (2), p.445-449

胡盛东吴丽娟周建林甘平张波李肇基

2012

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Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Chinese physics B, 2011-05, Vol.20 (5), p.444-449, Article 058502

徐小波张鹤鸣胡辉勇马建立

2011

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Design and Fabrication of MEMS Gyroscopes on the Silicon-on-insulator Substrate with Decoupled Oscillation Modes

练好基本功，加强高性能器件研究-国家自然科学基金2009年半导体科学领域申请项目概况分析

Silicon-on-Insulator-Based Broadband 1 × 3 Adiabatic Splitter with Simultaneous Tapering of Velocity and Coupling

Total Ionizing Dose Response of Different Length Devices in 0.13μm Partially Depleted Silicon-on-Insulator Technology

Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

Beam splitter based on Bragg grating-assisted coupler

Analytical modeling of subthreshold current and subthreshold swing of Gaussian- doped strained-Si-on-insulator MOSFETs

Partial-SOI high voltage laterally double-diffused MOS with a partially buried n＋-layer

Strain analysis of free-standing strained silicon-on-insulator nanomembrane

2.45 GHz 0.8 mW voltage-controlled ring oscillator （VCRO） in 28 nm fully depleted silicon-on-insulator （FDSOI） technology

Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

A high linearity X-band SO1 CMOS digitally-controlled phase shifter

Analytical modeling and simulation of germanium single gate silicon on insulator TFET

A High Performance Silicon-on-Insulator LDMOSTT Using Linearly Increasing Thickness Techniques

Gate-to-body tunneling current model for silicon-on-insulator MOSFETs

Wafer.Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

Compact all-optical differential-equation solver based on silicon microring resonator

Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate

A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer

基于衬底偏压的PSOILDMOS击穿特性研究

A large bandwidth photonic delay line using passive cascaded silicon-on-insulator microring resonators

The breakdown mechanism of a high-side pLDMOS based on a thin-layer silicon-on-insulator structure

Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n^＋-layer

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

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