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Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator

Applied physics letters, 2005-06, Vol.86 (25)

2005

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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Solid-state electronics, 2007-05, Vol.51 (5), p.771-777

2007

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E-Core Implementation in Intel 4 with PowerVia (Backside Power) Technology

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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IEEE_Xplore

Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels

IEEE electron device letters, 2006-06, Vol.27 (6), p.466-468

2006

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IEEE_Xplore

Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics

Solid-state electronics, 2005-06, Vol.49 (6), p.907-914

2005

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Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics

Solid-state electronics, 2004-12, Vol.48 (12), p.2271-2275

2004

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A novel strained Si0.7Ge0.3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack

IEEE electron device letters, 2003-03, Vol.24 (3), p.171

2003

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1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/ pMOSFETs

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2513-2519

2003

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IEEE_Xplore

Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack

Microelectronic engineering, 2005, Vol.77 (1), p.36-41

2005

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Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-k gate dielectrics and TiN gate

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.836-843

2006

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Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/ gate dielectrics and TiN gate

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.836-843

2006

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IEEE_Xplore

Enhanced intrinsic gain (gm/gd) of PMOSFETs with a Si0.7Ge0.3 channel

2002

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Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-[kappa] gate dielectrics and TiN gate

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.836

2006

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Random telegraph signal noise in SiGe heterojunction bipolar transistors

Journal of applied physics, 2002-10, Vol.92 (8), p.4414-4421

2002

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1/f noise in Si and Si0.7Ge0.3 pMOSFETs

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2513

2003

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Lateral encroachment of Ni-silicides in the source/drain regionson ultrathin silicon-on-insulator

Applied physics letters, 2005-06, Vol.86 (25), p.253507-253507-3

2005

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1/f noise in Si and Si/0.7/Ge/0.3/ pMOSFETs

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2513-2519

2003

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Ni-salicided CMOS with a poly-SiGe/Al 2O 3/HfO 2/Al 2O 3 gate stack

Microelectronic engineering, 2005, Vol.77 (1), p.36-41

2005

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Low-frequency noise and Coulomb scattering in Si0.8 Ge0.2 surface channel pMOSFET's with ALD Al2O3 gate dielectrics

Solid-state electronics, 2005, Vol.49, p.907

2005

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1/f noise in Si and Si sub(0.7)Ge sub(0.3) pMOSFETs

IEEE transactions on electron devices, 2003-01, Vol.50 (12)

2003

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pMOSFETs with recessed and selectively regrown Si1−xGex source/drain junctions

Materials science in semiconductor processing, 2005-02, Vol.8 (1-3), p.359-362

2005

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A novel strained Si(0.7)Ge(0.3) surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlO(x)/Al2O3 gate stack

IEEE electron device letters, 2003-03, Vol.24 (3), p.171-173

2003

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A novel strained Si/0.7/Ge/0.3/ surface-channel pMOSFET with an ALD TiN/Al(2)O(3)/HfAlO(x)/Al(2)O(3) gate stack

IEEE electron device letters, 2003-03, Vol.24 (3), p.171-173

2003

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A novel strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFET with an ALD TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O3 gate stack

IEEE electron device letters, 2003-03, Vol.24 (3), p.171-173

2003

Link zum Volltext
IEEE_Xplore

A novel strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFET with an ALD TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O 3 gate stack

IEEE electron device letters, 2003-03, Vol.24 (3), p.171-173

2003

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Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

E-Core Implementation in Intel 4 with PowerVia (Backside Power) Technology

Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels

Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics

Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics

A novel strained Si0.7Ge0.3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack

1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/ pMOSFETs

Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack

Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-k gate dielectrics and TiN gate

Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/ gate dielectrics and TiN gate

Enhanced intrinsic gain (gm/gd) of PMOSFETs with a Si0.7Ge0.3 channel

Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-[kappa] gate dielectrics and TiN gate

Random telegraph signal noise in SiGe heterojunction bipolar transistors

1/f noise in Si and Si0.7Ge0.3 pMOSFETs

Lateral encroachment of Ni-silicides in the source/drain regionson ultrathin silicon-on-insulator

1/f noise in Si and Si/0.7/Ge/0.3/ pMOSFETs

Ni-salicided CMOS with a poly-SiGe/Al 2O 3/HfO 2/Al 2O 3 gate stack

Low-frequency noise and Coulomb scattering in Si0.8 Ge0.2 surface channel pMOSFET's with ALD Al2O3 gate dielectrics

1/f noise in Si and Si sub(0.7)Ge sub(0.3) pMOSFETs

pMOSFETs with recessed and selectively regrown Si1−xGex source/drain junctions

A novel strained Si(0.7)Ge(0.3) surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlO(x)/Al2O3 gate stack

A novel strained Si/0.7/Ge/0.3/ surface-channel pMOSFET with an ALD TiN/Al(2)O(3)/HfAlO(x)/Al(2)O(3) gate stack

A novel strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFET with an ALD TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O3 gate stack

A novel strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFET with an ALD TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O 3 gate stack

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