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Thermal etching of SiC

Applied surface science, 2012-05, Vol.258 (15), p.5561-5566

2012

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Study of silver diffusion in silicon carbide

Journal of nuclear materials, 2009-05, Vol.389 (2), p.326-331

2009

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Influence of radiation damage on the thermal properties of silicon carbide implanted with heavy noble gas ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-03, Vol.371, p.240-244

2016

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Influence of radiation damage on xenon diffusion in silicon carbide

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2014-08, Vol.332, p.415-420

2014

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Investigation of silver and iodine transport through silicon carbide layers prepared for nuclear fuel element cladding

Journal of nuclear materials, 2011-03, Vol.410 (1), p.24-31

2011

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Influence of radiation damage on krypton diffusion in silicon carbide

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-07, Vol.354, p.42-46

2015

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Influence of radiation damage on strontium and iodine diffusion in silicon carbide

Journal of nuclear materials, 2012-06, Vol.425 (1-3), p.205-210

2012

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Surface and interface modification of Zr/SiC interface by swift heavy ion irradiation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-07, Vol.354, p.249-254

2015

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Synergistic effects of iodine and silver ions co-implanted in 6H–SiC

Journal of nuclear materials, 2015-12, Vol.467 (Part 2), p.582-587

2015

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Annealing of silver implanted 6H–SiC and the diffusion of the silver

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-03, Vol.274, p.120-125

2012

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Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-12, Vol.365, p.342-346

2015

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SEM analysis of ion implanted SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-11, Vol.315, p.136-141

2013

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Scanning electron microscopy of the surfaces of ion implanted SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-07, Vol.354, p.23-27

2015

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Diffusion behavior of cesium in silicon carbide at T>1000°C

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-09, Vol.286, p.102-107

2012

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Iodine assisted retainment of implanted silver in 6H-SiC at high temperatures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2014-09, Vol.334, p.101-105

2014

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Effect of thermal annealing and neutron irradiation in 6H-SiC implanted with silver at 350 °C and 600 °C

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-02, Vol.273, p.61-64

2012

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Cobalt silicide formation on a Si(100) substrate in the presence of an interfacial (Fe90Zr10) interlayer

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-09, Vol.359, p.85-88

2015

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Ion beam analysis of materials in the PBMR reactor

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2008-04, Vol.266 (8), p.1373-1377

2008

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Heat treatment of glassy carbon implanted with cesium at room and high temperatures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-02, Vol.273, p.68-71

2012

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Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2014-08, Vol.332, p.251-256

2014

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Study of iodine diffusion in silicon carbide

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2010-10, Vol.268 (19), p.2892-2896

2010

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Analysis of GaN cleaning procedures

Applied surface science, 2005-06, Vol.246 (1), p.279-289

2005

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Damage formation in SiC ion implanted at 625K

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-09, Vol.286, p.93-96

2012

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Study of implantation damage ranges in metals at temperatures ranging from 5 to 300 K

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-09, Vol.118 (1), p.29-33

1996

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Ion energy dependence of nanodot formation by nitrogen-bombarded InP

Solar energy materials and solar cells, 2006-06, Vol.90 (10), p.1504-1512

2006

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Thermal etching of SiC

Study of silver diffusion in silicon carbide

Influence of radiation damage on the thermal properties of silicon carbide implanted with heavy noble gas ions

Influence of radiation damage on xenon diffusion in silicon carbide

Investigation of silver and iodine transport through silicon carbide layers prepared for nuclear fuel element cladding

Influence of radiation damage on krypton diffusion in silicon carbide

Influence of radiation damage on strontium and iodine diffusion in silicon carbide

Surface and interface modification of Zr/SiC interface by swift heavy ion irradiation

Synergistic effects of iodine and silver ions co-implanted in 6H–SiC

Annealing of silver implanted 6H–SiC and the diffusion of the silver

Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

SEM analysis of ion implanted SiC

Scanning electron microscopy of the surfaces of ion implanted SiC

Diffusion behavior of cesium in silicon carbide at T>1000°C

Iodine assisted retainment of implanted silver in 6H-SiC at high temperatures

Effect of thermal annealing and neutron irradiation in 6H-SiC implanted with silver at 350 °C and 600 °C

Cobalt silicide formation on a Si(100) substrate in the presence of an interfacial (Fe90Zr10) interlayer

Ion beam analysis of materials in the PBMR reactor

Heat treatment of glassy carbon implanted with cesium at room and high temperatures

Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC

Study of iodine diffusion in silicon carbide

Analysis of GaN cleaning procedures

Damage formation in SiC ion implanted at 625K

Study of implantation damage ranges in metals at temperatures ranging from 5 to 300 K

Ion energy dependence of nanodot formation by nitrogen-bombarded InP

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