UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Industrial high-rate (∼5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions

Progress in photovoltaics, 2005-12, Vol.13 (8), p.705-712

2005

Volltextzugriff (PDF)

Production Mechanisms of NH and NH2 Radicals in N2−H2 Plasmas

The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 2007-11, Vol.111 (45), p.11460-11472

2007

Volltextzugriff (PDF)

Density and production of NH and NH2 in an Ar–NH3 expanding plasma jet

Journal of applied physics, 2005-11, Vol.98 (9)

2005

Volltextzugriff (PDF)

Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth

Surface science, 2003-12, Vol.547 (3), p.L865-L870

2003

Volltextzugriff (PDF)

Downstream ion and radical densities in an Ar–NH3 plasma generated by the expanding thermal plasma technique

Plasma sources science & technology, 2006-08, Vol.15 (3), p.546-555

2006

Volltextzugriff (PDF)

Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy

Thin solid films, 2009-04, Vol.517 (12), p.3456-3460

2009

Volltextzugriff (PDF)

Hot-wire deposition of a-Si:H thin films on wafer substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy

Thin solid films, 2008-01, Vol.516 (5), p.511-516

2008

Volltextzugriff (PDF)

Real-time study of a − Si : H ∕ c − Si heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation

Physical review. B, Condensed matter and materials physics, 2008-05, Vol.77 (20), Article 205329

2008

Volltextzugriff (PDF)

Roughness evolution of high-rate deposited a-SiNx:H films studied by atomic force microscopy and real time spectroscopic ellipsometry

MRS proceedings, 2004, Vol.808

2004

Volltextzugriff (PDF)

a - Si : H ∕ c - Si heterointerface formation and epitaxial growth studied by real time optical probes

Applied physics letters, 2007-05, Vol.90 (20)

2007

Volltextzugriff (PDF)

N, NH, and NH2 radical densities in a remote Ar–NH3–SiH4 plasma and their role in silicon nitride deposition

Journal of applied physics, 2006-11, Vol.100 (9)

2006

Volltextzugriff (PDF)

Real time spectroscopic ellipsometry on ultrathin ( < 50 Å ) hydrogenated amorphous silicon films on Si(100) and GaAs(100)

Journal of applied physics, 2007-06, Vol.101 (12), p.123529-123529-10

2007

Volltextzugriff (PDF)

The a-Si:H Growth Mechanism: Temperature Study of the SiH3 Surface Reactivity and the Surface Silicon Hydride Composition During Film Growth

MRS proceedings, 2003, Vol.762

2003

Volltextzugriff (PDF)

Coil-globule transition for regular, random, and specially designed copolymers: Monte Carlo simulation and self-consistent field theory

Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 2002-04, Vol.65 (4 Pt 1), p.041708-041708, Article 041708

2002

Volltextzugriff (PDF)

HIGH-RATE SILICON NITRIDE DEPOSITION FOR PHOTOVOLTAICS: FROM FUNDAMENTALS TO INDUSTRIAL APPLICATION

High temperature material processes, 2005, Vol.9 (1), p.141-157

2005

Volltextzugriff (PDF)

High-rate a-Si:H and μc-Si:H Film Growth Studied by Advanced Plasma and in situ Film Diagnostics

MRS proceedings, 2002, Vol.715, Article A25.6

2002

Volltextzugriff (PDF)

Plasma properties of a novel commercial plasma source for high-throughput processing of c-Si solar cells

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005, 2005, p.1320-1323

2005

Volltextzugriff (PDF)

a - Si : H ∕ c - Si heterointerface formation and epitaxial growth studiedby real time optical probes

Applied physics letters, 2007-05, Vol.90 (20), p.202108-202108-3

2007

Volltextzugriff (PDF)

Production Mechanisms of NH and NH 2 Radicals in N 2 −H 2 Plasmas

The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 2007-11, Vol.111 (45), p.11460-11472

2007

Volltextzugriff (PDF)

N, NH, and N H 2 radical densities in a remote Ar - N H 3 - Si H 4 plasmaand their role in silicon nitride deposition

Journal of applied physics, 2006-11, Vol.100 (9), p.093303-093303-10

2006

Volltextzugriff (PDF)

N, NH, and NH{sub 2} radical densities in a remote Ar-NH{sub 3}-SiH{sub 4} plasma and their role in silicon nitride deposition

Journal of applied physics, 2006-11, Vol.100 (9)

2006

Volltextzugriff (PDF)

Density and production of NH and N H 2 in an Ar - N H 3 expanding plasma jet

Journal of applied physics, 2005-11, Vol.98 (9), p.093301-093301-10

2005

Volltextzugriff (PDF)

On the charge overcompensation of quenched polyelectrolyte stars electrostatically adsorbed onto a quenched oppositely charged planar surface

The Journal of chemical physics, 2003-01, Vol.118 (2), p.969-980

2003

Volltextzugriff (PDF)

Downstream ion and radical densities in an Ar–NH 3 plasma generated by the expanding thermal plasma technique

Plasma sources science & technology, 2006-08, Vol.15 (3), p.546-555

2006

Volltextzugriff (PDF)

The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma

Journal of non-crystalline solids, 2004-06, Vol.338-340, p.37-41

2004

Volltextzugriff (PDF)

1 – 25 von 104

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(93)
Mit Volltextzugriff
(95)

Publikationsform

Sprache

Englisch
(99)
Niederländisch
(2)

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Industrial high-rate (∼5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions

Production Mechanisms of NH and NH2 Radicals in N2−H2 Plasmas

Density and production of NH and NH2 in an Ar–NH3 expanding plasma jet

Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth

Downstream ion and radical densities in an Ar–NH3 plasma generated by the expanding thermal plasma technique

Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy

Hot-wire deposition of a-Si:H thin films on wafer substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy

Real-time study of a − Si : H ∕ c − Si heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation

Roughness evolution of high-rate deposited a-SiNx:H films studied by atomic force microscopy and real time spectroscopic ellipsometry

a - Si : H ∕ c - Si heterointerface formation and epitaxial growth studied by real time optical probes

N, NH, and NH2 radical densities in a remote Ar–NH3–SiH4 plasma and their role in silicon nitride deposition

Real time spectroscopic ellipsometry on ultrathin ( < 50 Å ) hydrogenated amorphous silicon films on Si(100) and GaAs(100)

The a-Si:H Growth Mechanism: Temperature Study of the SiH3 Surface Reactivity and the Surface Silicon Hydride Composition During Film Growth

Coil-globule transition for regular, random, and specially designed copolymers: Monte Carlo simulation and self-consistent field theory

HIGH-RATE SILICON NITRIDE DEPOSITION FOR PHOTOVOLTAICS: FROM FUNDAMENTALS TO INDUSTRIAL APPLICATION

High-rate a-Si:H and μc-Si:H Film Growth Studied by Advanced Plasma and in situ Film Diagnostics

Plasma properties of a novel commercial plasma source for high-throughput processing of c-Si solar cells

a - Si : H ∕ c - Si heterointerface formation and epitaxial growth studiedby real time optical probes

Production Mechanisms of NH and NH 2 Radicals in N 2 −H 2 Plasmas

N, NH, and N H 2 radical densities in a remote Ar - N H 3 - Si H 4 plasmaand their role in silicon nitride deposition

N, NH, and NH{sub 2} radical densities in a remote Ar-NH{sub 3}-SiH{sub 4} plasma and their role in silicon nitride deposition

Density and production of NH and N H 2 in an Ar - N H 3 expanding plasma jet

On the charge overcompensation of quenched polyelectrolyte stars electrostatically adsorbed onto a quenched oppositely charged planar surface

Downstream ion and radical densities in an Ar–NH 3 plasma generated by the expanding thermal plasma technique

The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma

Suchergebnisse filtern