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Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures

Journal of applied physics, 2012-09, Vol.112 (5)

2012

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GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability

Physica status solidi. A, Applications and materials science, 2009-06, Vol.206 (6), p.1215-1220

2009

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A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

IEEE microwave and wireless components letters, 2005-07, Vol.15 (7), p.460-462

2005

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Simulation of RF MEMS based matching networks and a single pole double throw switch for Multiband T/R Modules

Advances in radio science, 2013-07, Vol.11 (3), p.197-206

2013

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High-Efficiency, High-Temperature Continuous Class-E Sub-Waveform Solution AlGaN/GaN Power Amplifier

IEEE microwave and wireless components letters, 2015-08, Vol.25 (8), p.526-528

2015

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GaN HEMTs and MMICs for space applications

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74010

2013

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A Systematic State-Space Approach to Large-Signal Transistor Modeling

IEEE transactions on microwave theory and techniques, 2007-02, Vol.55 (2), p.195-206

2007

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New Low-Frequency Dispersion Model for AlGaN/GaN HEMTs Using Integral Transform and State Description

IEEE transactions on microwave theory and techniques, 2013-01, Vol.61 (1), p.154-167

2013

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Design and stability test of a 2-40 GHz frequency doubler with active balun

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2000, Vol.3, p.1573-1576 vol.3

2000

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Design of highly-efficient GaN X-band-power-amplifier MMICs

2009 IEEE MTT-S International Microwave Symposium Digest, 2009, p.661-664

2009

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GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate

Physica status solidi. C, 2006-03, Vol.3 (3), p.473-477

2006

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Development of a 2″-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications

Physica status solidi. A, Applied research, 2003-11, Vol.200 (1), p.191-194

2003

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A [Formula Omitted]-Band Broadband Balanced Power Amplifier Module Based on Cascode mHEMTs

IEEE microwave and wireless technology letters (Print), 2018-01, Vol.28 (10), p.924

2018

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Balanced Microstrip AlGaN/GaN HEMT Power Amplifier MMIC for X-Band Applications

2008 European Microwave Integrated Circuit Conference, 2008, p.95-98

2008

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Error-corrected large-signal waveform measurement system combining network analyzer and sampling oscilloscope capabilities

IEEE transactions on microwave theory and techniques, 1990-04, Vol.38 (4), p.358-365

1990

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A G -Band Broadband Balanced Power Amplifier Module Based on Cascode mHEMTs

IEEE microwave and wireless components letters, 2018-10, Vol.28 (10), p.924-926

2018

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A dual-band UMTS/LTE highly power-efficient class-ABJ Doherty GaN PA

2015 10th European Microwave Integrated Circuits Conference (EuMIC), 2015, p.313-316

2015

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A dual-band UMTS/LTE highly power-efficient Class-ABJ Doherty GaN PA

2015 European Microwave Conference (EuMC), 2015, p.1164-1167

2015

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GaN HEMTs and MMICs for space applications: Gallium nitride electronics

Semiconductor science and technology, 2013, Vol.28 (7)

2013

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A n-state time-domain measurement test-bench for characterization of intermodulation distortion on device level

IEEE MTT-S International Microwave Symposium Digest, 2003, 2003, Vol.3, p.1643-1646 vol.3

2003

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GaAs FET characterization in a quasi-monolithic Si environment

IEEE MTT-S International Microwave Symposium digest, 1999, Vol.4, p.1889-1892

1999

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Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications

2011 IEEE MTT-S International Microwave Symposium, 2011, p.1-4

2011

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12 GHz coplanar quasi-monolithic oscillator

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.1, p.227-228 vol.1

1999

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Precisely calibrated coaxial-to-microstrip transitions yield improved performance in GaAs FET characterization

IEEE transactions on microwave theory and techniques, 1990-01, Vol.38 (1), p.62-68

1990

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Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications

2011 IEEE MTT-S International Microwave Symposium, 2011, p.1-1

2011

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Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures

GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability

A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

Simulation of RF MEMS based matching networks and a single pole double throw switch for Multiband T/R Modules

High-Efficiency, High-Temperature Continuous Class-E Sub-Waveform Solution AlGaN/GaN Power Amplifier

GaN HEMTs and MMICs for space applications

A Systematic State-Space Approach to Large-Signal Transistor Modeling

New Low-Frequency Dispersion Model for AlGaN/GaN HEMTs Using Integral Transform and State Description

Design and stability test of a 2-40 GHz frequency doubler with active balun

Design of highly-efficient GaN X-band-power-amplifier MMICs

GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate

Development of a 2″-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications

A [Formula Omitted]-Band Broadband Balanced Power Amplifier Module Based on Cascode mHEMTs

Balanced Microstrip AlGaN/GaN HEMT Power Amplifier MMIC for X-Band Applications

Error-corrected large-signal waveform measurement system combining network analyzer and sampling oscilloscope capabilities

A G -Band Broadband Balanced Power Amplifier Module Based on Cascode mHEMTs

A dual-band UMTS/LTE highly power-efficient class-ABJ Doherty GaN PA

A dual-band UMTS/LTE highly power-efficient Class-ABJ Doherty GaN PA

GaN HEMTs and MMICs for space applications: Gallium nitride electronics

A n-state time-domain measurement test-bench for characterization of intermodulation distortion on device level

GaAs FET characterization in a quasi-monolithic Si environment

Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications

12 GHz coplanar quasi-monolithic oscillator

Precisely calibrated coaxial-to-microstrip transitions yield improved performance in GaAs FET characterization

Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications

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