UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Atomic layer deposition of titanium nitride from TDMAT precursor

Microelectronic engineering, 2009, Vol.86 (1), p.72-77

2009

Volltextzugriff (PDF)

In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon

Thin solid films, 2008-06, Vol.516 (15), p.4946-4952

2008

Volltextzugriff (PDF)

High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation

Journal of applied physics, 2005-08, Vol.98 (3)

2005

Volltextzugriff (PDF)

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction

Applied physics. A, Materials science & processing, 2010-02, Vol.98 (2), p.357-365

2010

Volltextzugriff (PDF)

Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

Applied physics letters, 2010-04, Vol.96 (17), p.173503-173503-3

2010

Volltextzugriff (PDF)

The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky diodes

Semiconductor science and technology, 2006-01, Vol.21 (1), p.1-5

2006

Volltextzugriff (PDF)

Thin film solid-state reactions forming carbides as contact materials for carbon-containing semiconductors

Journal of applied physics, 2007-03, Vol.101 (5)

2007

Volltextzugriff (PDF)

Influence of a transient hexagonal phase on the microstructure and morphological stability of NiSi films

Applied physics letters, 2009-01, Vol.94 (3)

2009

Volltextzugriff (PDF)

Texture of Cobalt Germanides on Ge(100) and Ge(111) and Its Influence on the Formation Temperature

Journal of the Electrochemical Society, 2010, Vol.157 (4), p.H395

2010

Volltextzugriff (PDF)

The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes

Solid-state electronics, 2005-06, Vol.49 (6), p.878-883

2005

Volltextzugriff (PDF)

CoSi2 formation in the presence of Ti, Ta or W

The Journal of biological chemistry, 2004-12, Vol.468 (1-2), p.174-182

2004

Volltextzugriff (PDF)

A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM)

Semiconductor science and technology, 2001-12, Vol.16 (12), p.975-981

2001

Volltextzugriff (PDF)

A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments

Semiconductor science and technology, 1999-09, Vol.14 (9), p.871-877

1999

Volltextzugriff (PDF)

Texture of atomic layer deposited ruthenium

Microelectronic engineering, 2010-10, Vol.87 (10), p.1879-1883

2010

Volltextzugriff (PDF)

Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

Applied physics letters, 2007-01, Vol.90 (3)

2007

Volltextzugriff (PDF)

In situ X-ray diffraction study of thin film Ir/Si solid state reactions

Microelectronic engineering, 2010-03, Vol.87 (3), p.258-262

2010

Volltextzugriff (PDF)

In situ study of the formation of silicide phases in amorphous Co–Si mixed layers

Microelectronic engineering, 2010-03, Vol.87 (3), p.282-285

2010

Volltextzugriff (PDF)

In situ x-ray diffraction study of metal induced crystallization of amorphous germanium

Journal of applied physics, 2009-04, Vol.105 (8), p.083532-083532-7

2009

Volltextzugriff (PDF)

Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

Microelectronic engineering, 2004-05, Vol.71 (3-4), p.252-261

2004

Volltextzugriff (PDF)

In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition

Journal of materials science. Materials in electronics, 2010, Vol.21 (1), p.88-95

2010

Volltextzugriff (PDF)

Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation

Semiconductor science and technology, 2005-08, Vol.20 (8), p.716-719

2005

Volltextzugriff (PDF)

Yttrium silicide formation and its contact properties on Si(1 0 0)

Microelectronic engineering, 2008, Vol.85 (1), p.131-135

2008

Volltextzugriff (PDF)

Photoluminescent and structural properties of CaS:Pb electron beam deposited thin films

Journal of physics. Condensed matter, 2001-06, Vol.13 (24), p.5709-5716

2001

Volltextzugriff (PDF)

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Solid-state electronics, 2005-04, Vol.49 (4), p.606-611

2005

Volltextzugriff (PDF)

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni–Si solid-state reaction

Thin solid films, 2004-09, Vol.462 (Complete), p.146-150

2004

Volltextzugriff (PDF)

1 – 25 von 247

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(207)
Mit Volltextzugriff
(214)

Publikationsform

Sprache

Englisch
(235)
Deutsch
(3)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Atomic layer deposition of titanium nitride from TDMAT precursor

In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon

High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction

Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky diodes

Thin film solid-state reactions forming carbides as contact materials for carbon-containing semiconductors

Influence of a transient hexagonal phase on the microstructure and morphological stability of NiSi films

Texture of Cobalt Germanides on Ge(100) and Ge(111) and Its Influence on the Formation Temperature

The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes

CoSi2 formation in the presence of Ti, Ta or W

A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM)

A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments

Texture of atomic layer deposited ruthenium

Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

In situ X-ray diffraction study of thin film Ir/Si solid state reactions

In situ study of the formation of silicide phases in amorphous Co–Si mixed layers

In situ x-ray diffraction study of metal induced crystallization of amorphous germanium

Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition

Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation

Yttrium silicide formation and its contact properties on Si(1 0 0)

Photoluminescent and structural properties of CaS:Pb electron beam deposited thin films

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni–Si solid-state reaction

Suchergebnisse filtern