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Ge segregation at Si/Si1-xGex interfaces grown by molecular beam epitaxy

Applied physics letters, 1989-12, Vol.55 (24), p.2520-2522

1989

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Growth and characterization of atomic layer doping structures in Si

Journal of applied physics, 1989-03, Vol.65 (6), p.2485-2492

1989

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Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy

IEEE electron device letters, 1991-07, Vol.12 (7), p.357-359

1991

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Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxy

Applied physics letters, 1989-05, Vol.54 (19), p.1869-1871

1989

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Voids in epitaxial silicon films grown under different thermal conditions: void detection by thermal helium desorption

Thin solid films, 1994-04, Vol.241 (1), p.206-210

1994

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Photoluminescence from Si/Ge superlattices

Applied physics letters, 1990-01, Vol.56 (4), p.340-342

1990

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Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si

Japanese Journal of Applied Physics, 1987-12, Vol.26 (12A), p.L1933

1987

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Structural characterization of an Sb delta-doping layer in silicon

Applied physics letters, 1989-09, Vol.55 (10), p.963-965

1989

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Thermal stability of strained Si/Si1-xGex/Si structures

Semiconductor science and technology, 1990-04, Vol.5 (4), p.345-347

1990

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Classical calculations of CV profiles for atomic layer doping structures in silicon

IEEE transactions on electron devices, 1989-02, Vol.36 (2), p.410-415

1989

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Longitudinal phonons in Si/Ge superlattices

Semiconductor science and technology, 1989-10, Vol.4 (10), p.889-891

1989

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Effect of interface quality on the electrical properties of p-Si/SiGe two-dimensional hole gas systems

Applied physics letters, 1990-12, Vol.57 (24), p.2567-2569

1990

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Spot reduction in electron guns using a selective prefocusing lens

Journal of applied physics, 1985-01, Vol.58 (8), p.2902-2908

1985

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Performance and processing line integration of a silicon molecular beam epitaxy system

Thin solid films, 1990, Vol.184 (1), p.207-219

1990

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Design of a new retarding-field electron spectrometer for depth-selective conversion electron Mossbauer spectroscopy

Journal of physics. E, Scientific instruments, 1988-06, Vol.21 (6), p.587-591

1988

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Influence of layer thickness on nucleation in amorphous silicon thin films

Materials letters, 1990-04, Vol.9 (7), p.259-262

1990

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Ga delta-doping layers in silicon

Applied physics letters, 1991-09, Vol.59 (12), p.1461-1463

1991

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High‐brightness and high‐resolution RHEED system

Review of scientific instruments, 1989-09, Vol.60 (9), p.2940-2944

1989

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Silicon molecular beam epitaxy

Advanced materials (Weinheim), 1991-07, Vol.3 (7-8), p.351-355

1991

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Physicists in Industry : a European Perspective

Butsuri, 1988/04/05, Vol.43(4), pp.264-267

Gorkum, Aart A. van

1988

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Germanium diffusion and strain relaxation in Si/Si1−xGex/Si structures

Thin solid films, 1989-12, Vol.183 (1-2), p.183-190

1989

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A study of bubble nucleation in tungsten using thermal desorption spectrometry: Clusters of 2 to 100 helium atoms

Journal of nuclear materials, 1980-08, Vol.92 (1), p.79-88

1980

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Correction of spherical aberration in charged particle lenses using aspherical foils

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1983-10, Vol.1 (4), p.1312-1315

van Gorkum, Aart A.

1983

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Attachment of mobile particles to non-saturable traps: I. A theoretical model

Radiation effects, 1979-01, Vol.42 (1-2), p.93-111

1979

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Positron beam defect profiling of silicon epitaxial layers

Journal of applied physics, 1991-09, Vol.70 (6), p.3003-3006

1991

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Ge segregation at Si/Si1-xGex interfaces grown by molecular beam epitaxy

Growth and characterization of atomic layer doping structures in Si

Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy

Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxy

Voids in epitaxial silicon films grown under different thermal conditions: void detection by thermal helium desorption

Photoluminescence from Si/Ge superlattices

Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si

Structural characterization of an Sb delta-doping layer in silicon

Thermal stability of strained Si/Si1-xGex/Si structures

Classical calculations of CV profiles for atomic layer doping structures in silicon

Longitudinal phonons in Si/Ge superlattices

Effect of interface quality on the electrical properties of p-Si/SiGe two-dimensional hole gas systems

Spot reduction in electron guns using a selective prefocusing lens

Performance and processing line integration of a silicon molecular beam epitaxy system

Design of a new retarding-field electron spectrometer for depth-selective conversion electron Mossbauer spectroscopy

Influence of layer thickness on nucleation in amorphous silicon thin films

Ga delta-doping layers in silicon

High‐brightness and high‐resolution RHEED system

Silicon molecular beam epitaxy

Physicists in Industry : a European Perspective

Germanium diffusion and strain relaxation in Si/Si1−xGex/Si structures

A study of bubble nucleation in tungsten using thermal desorption spectrometry: Clusters of 2 to 100 helium atoms

Correction of spherical aberration in charged particle lenses using aspherical foils

Attachment of mobile particles to non-saturable traps: I. A theoretical model

Positron beam defect profiling of silicon epitaxial layers

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