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Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

IEEE electron device letters, 2008-04, Vol.29 (4), p.378-381

2008

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High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates

Journal of crystal growth, 2013-11, Vol.383, p.9-11

2013

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An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III-V NMOS

IEEE electron device letters, 2012-04, Vol.33 (4), p.501-503

2012

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Silicides and germanides for nano-CMOS applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.144-154

2008

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Strain and Conduction-Band Offset in Narrow n-type FinFETs

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1005-1010

2013

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InAs nanowire GAA n-MOSFETs with 12-15 nm diameter

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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Ni- and Co-based silicides for advanced CMOS applications

Microelectronic engineering, 2003-11, Vol.70 (2), p.158-165

2003

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Intrinsic diffusion and Kirkendall effect in Ni–Pd and Fe–Pd solid solutions

Acta materialia, 2000-01, Vol.48 (2), p.385-396

2000

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Multi-gate devices for the 32 nm technology node and beyond

Solid-state electronics, 2008-09, Vol.52 (9), p.1291-1296

2008

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The Kirkendall effect in multiphase diffusion

Acta materialia, 2004-02, Vol.52 (3), p.623-630

2004

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Microstructural stability of the Kirkendall plane in solid-state diffusion

Physical review letters, 2001-04, Vol.86 (15), p.3352-3355

2001

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Linewidth effect and phase control in Ni fully silicided gates

IEEE electron device letters, 2006-08, Vol.27 (8), p.647-649

2006

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Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors

Applied physics letters, 2007-06, Vol.90 (24), p.241912-241912-3

2007

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Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

Solid-state electronics, 2009-07, Vol.53 (7), p.760-766

2009

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On the Spatial Stability and Bifurcation of the Kirkendall Plane during Solid-State Interdiffusion

Critical reviews in solid state and materials sciences, 2008-07, Vol.33 (3-4), p.210-233

2008

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Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

IEEE electron device letters, 2006-03, Vol.27 (3), p.160-162

2006

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Nanometer scale characterisation of CoSi2 and NiSi induced strain in Si by convergent beam electron diffraction

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114-115, p.61-66

2004

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Phase effects and short gate length device implementation of Ni fully silicided (FUSI) gates

Microelectronic engineering, 2006-11, Vol.83 (11), p.2117-2121

2006

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Diffusion studies and re-examination of the Kirkendall effect in the Au–Ni system

Journal of alloys and compounds, 2000-09, Vol.309 (1), p.132-140

2000

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Study of silicide contacts to SiGe source/drain

Microelectronic engineering, 2006-11, Vol.83 (11), p.2268-2271

2006

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Growth of heterostructures on InAs for high mobility device applications

Journal of crystal growth, 2013-09, Vol.378, p.117-120

2013

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Work function of Ni silicide phases on HfSiON and SiO2 : NiSi, Ni2Si, Ni31Si12, and Ni3Si fully silicided gates

IEEE electron device letters, 2006, Vol.27 (1), p.34-36

2006

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Permeation of nitrogen in solid nickel and deformation phenomena accompanying internal nitridation

Acta materialia, 1999-09, Vol.47 (11), p.3169-3180

1999

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Experimental studies of dose retention and activation in fin field-effect-transistor-based structures

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-01, Vol.28 (1), p.C1-C1H13

2010

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Reaction of Ni and Si0.8Ge0.2: phase formation and thermal stability

Microelectronic engineering, 2004-10, Vol.76 (1-4), p.297-302

2004

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Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates

An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III-V NMOS

Silicides and germanides for nano-CMOS applications

Strain and Conduction-Band Offset in Narrow n-type FinFETs

InAs nanowire GAA n-MOSFETs with 12-15 nm diameter

Ni- and Co-based silicides for advanced CMOS applications

Intrinsic diffusion and Kirkendall effect in Ni–Pd and Fe–Pd solid solutions

Multi-gate devices for the 32 nm technology node and beyond

The Kirkendall effect in multiphase diffusion

Microstructural stability of the Kirkendall plane in solid-state diffusion

Linewidth effect and phase control in Ni fully silicided gates

Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors

Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

On the Spatial Stability and Bifurcation of the Kirkendall Plane during Solid-State Interdiffusion

Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

Nanometer scale characterisation of CoSi2 and NiSi induced strain in Si by convergent beam electron diffraction

Phase effects and short gate length device implementation of Ni fully silicided (FUSI) gates

Diffusion studies and re-examination of the Kirkendall effect in the Au–Ni system

Study of silicide contacts to SiGe source/drain

Growth of heterostructures on InAs for high mobility device applications

Work function of Ni silicide phases on HfSiON and SiO2 : NiSi, Ni2Si, Ni31Si12, and Ni3Si fully silicided gates

Permeation of nitrogen in solid nickel and deformation phenomena accompanying internal nitridation

Experimental studies of dose retention and activation in fin field-effect-transistor-based structures

Reaction of Ni and Si0.8Ge0.2: phase formation and thermal stability

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