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Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Journal of electronic materials, 2006-04, Vol.35 (4), p.592-598

2006

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The role of Al on Ohmic contact formation on n -type GaN and AlGaN ∕ GaN

Applied physics letters, 2005-08, Vol.87 (6), p.061905-061905-3

2005

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Formation of metallic In in InGaN∕GaN multiquantum wells

Applied physics letters, 2004-11, Vol.85 (19), p.4379-4381

2004

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Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology (\hbox)

IEEE electron device letters, 2007-12, Vol.28 (12), p.1089-1091

2007

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IEEE_Xplore

SP-0093 ETHICAL VALUES IN MANAGING A DEPARTMENT

Radiotherapy and oncology, 2012-05, Vol.103, p.S37-S38

2012

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CdSe quantum dot formation: alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions

Nanotechnology, 2007-07, Vol.18 (26), p.265701-265701 (11)

2007

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Cesium near-surface concentration in low energy, negative mode dynamic SIMS

Applied surface science, 2008-12, Vol.255 (4), p.1316-1319

2008

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Ripple morphologies on ion irradiated Si1−xGex

Applied surface science, 2008-12, Vol.255 (4), p.1368-1372

2008

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Formation of germanium shallow junction by flash annealing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2007-04, Vol.257 (1-2), p.157-160

2007

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Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistors

Applied physics letters, 2006-11, Vol.89 (20)

2006

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Low temperature epitaxy and the importance of moisture control

Thin solid films, 2008-11, Vol.517 (1), p.416-418

2008

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Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures

Journal of crystal growth, 2003-02, Vol.248, p.498-502

2003

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Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaN HEMT-like structures

Physica status solidi. A, Applied research, 2003-01, Vol.195 (1), p.93-100

2003

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Single crystalline GaN grown on porous Si(111) by MOVPE

Physica status solidi. C, 2007-05, Vol.4 (6), p.1908-1912

2007

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Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots

Physical review. B, Condensed matter, 2003-07, Vol.68 (4), Article 045329

2003

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Impact of Fluorine co-implant on Boron Diffusion during Non-melt Laser Annealing

Ion Implantation Technology, 2006, Vol.866, p.21-24

2006

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Morphology of CdSe/ZnSe quantum dots grown by MBE

Physica status solidi. C, 2006-03, Vol.3 (4), p.938-941

2006

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Ripple morphologies on ion irradiated Si 1− x Ge x

Applied surface science, 2008-12, Vol.255 (4), p.1368-1372

2008

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Investigation of AlN nucleation layers for AlGaN/GaN heterostructures on 4H-SiC

Physica status solidi. C, 2006-06, Vol.3 (6), p.1579-1582

2006

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Relation between Microstructure and 2DEG Properties of AlGaN/GaN Structures

Physica status solidi. B. Basic research, 2002-12, Vol.234 (3), p.830-834

2002

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Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium

Journal of applied physics, 2009-05, Vol.105 (9), p.093538-093538-3

2009

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High precision determination of the elastic strain of InGaN/GaN multiple quantum wells

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-05, Vol.22 (3), p.920-924

2004

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Mechanism for Ohmic contact formation on Si 3 N 4 passivated Al Ga N ∕ Ga N high-electron-mobility transistors

Applied physics letters, 2006-11, Vol.89 (20), p.201908-201908-3

2006

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Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

2007 IEEE International Electron Devices Meeting, 2007, p.955-958

2007

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IEEE_Xplore

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers: Group III Nitrides, SiC, and ZnO

Journal of electronic materials, 2006, Vol.35 (4), p.592-598

2006

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Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

The role of Al on Ohmic contact formation on n -type GaN and AlGaN ∕ GaN

Formation of metallic In in InGaN∕GaN multiquantum wells

Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology (\hbox)

SP-0093 ETHICAL VALUES IN MANAGING A DEPARTMENT

CdSe quantum dot formation: alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions

Cesium near-surface concentration in low energy, negative mode dynamic SIMS

Ripple morphologies on ion irradiated Si1−xGex

Formation of germanium shallow junction by flash annealing

Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistors

Low temperature epitaxy and the importance of moisture control

Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures

Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaN HEMT-like structures

Single crystalline GaN grown on porous Si(111) by MOVPE

Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots

Impact of Fluorine co-implant on Boron Diffusion during Non-melt Laser Annealing

Morphology of CdSe/ZnSe quantum dots grown by MBE

Ripple morphologies on ion irradiated Si 1− x Ge x

Investigation of AlN nucleation layers for AlGaN/GaN heterostructures on 4H-SiC

Relation between Microstructure and 2DEG Properties of AlGaN/GaN Structures

Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium

High precision determination of the elastic strain of InGaN/GaN multiple quantum wells

Mechanism for Ohmic contact formation on Si 3 N 4 passivated Al Ga N ∕ Ga N high-electron-mobility transistors

Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers: Group III Nitrides, SiC, and ZnO

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