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Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN

Journal of physics. D, Applied physics, 2010-02, Vol.43 (5), p.055406

2010

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Surface potential of n - and p -type GaN measured by Kelvin force microscopy

Applied physics letters, 2008-11, Vol.93 (21), p.212107-212107-3

2008

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Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC

Journal of crystal growth, 2013-05, Vol.370, p.282-287

2013

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Thermal oxidation of lattice matched InAlN/GaN heterostructures

Physica status solidi. C, 2010-01, Vol.7 (1), p.13-16

2010

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LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

Physica status solidi. C, 2010-05, Vol.7 (5), p.1317-1324

2010

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In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Journal of crystal growth, 2007, Vol.298, p.826-830

2007

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AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

IEEE electron device letters, 2010-01, Vol.31 (1), p.11-13

2010

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High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC

IEEE electron device letters, 2009-08, Vol.30 (8), p.808-810

2009

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Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN AlN GaN heterostructures

Semiconductor science and technology, 2015-09, Vol.30 (10), p.105034

2015

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GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

Journal of crystal growth, 2008-11, Vol.310 (23), p.5232-5236

2008

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Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

Solid-state electronics, 2012, Vol.67 (1), p.74-78

2012

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Fundamentals and practice of metal contacts to wide band gap semiconductor devices

Crystal research and technology (1979), 2012-03, Vol.47 (3), p.261-272

2012

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III-Nitrides semiconductor compounds for microwave devices

Physica status solidi. A, Applications and materials science, 2006-01, Vol.203 (1), p.185-193

2006

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Structural characterisation of GaAlN/GaN HEMT heterostructures

Applied surface science, 2006-10, Vol.253 (1), p.228-231

2006

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Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1662-1666

2015

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Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs

Solid-state electronics, 2015-11, Vol.113, p.15-21

2015

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Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2248-2252

2014

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LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices

Journal of crystal growth, 2004-12, Vol.272 (1), p.305-311

2004

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Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

AIP advances, 2014-12, Vol.4 (12), p.127101-127101-13

2014

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Characteristics of Al2O3/AlInN/GaN MOSHEMT

Electronics letters, 2007, Vol.43 (12), p.691-692

2007

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Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges

Solid-state electronics, 2007-06, Vol.51 (6), p.969-974

2007

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Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

Thin solid films, 2008-10, Vol.516 (23), p.8447-8452

2008

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Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Applied physics letters, 2013-07, Vol.103 (3)

2013

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X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Electronics letters, 2007, Vol.43 (23), p.1317-1318

2007

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Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN

Surface potential of n - and p -type GaN measured by Kelvin force microscopy

Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC

Thermal oxidation of lattice matched InAlN/GaN heterostructures

LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN AlN GaN heterostructures

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

Fundamentals and practice of metal contacts to wide band gap semiconductor devices

III-Nitrides semiconductor compounds for microwave devices

Structural characterisation of GaAlN/GaN HEMT heterostructures

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

Characteristics of Al2O3/AlInN/GaN MOSHEMT

Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges

Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

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