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Nanometre-scale electronics with III-V compound semiconductors

Nature (London), 2011-11, Vol.479 (7373), p.317-323

del Alamo, Jesús A

2011

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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.132-140

2011

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IEEE_Xplore

III–V compound semiconductor transistors—from planar to nanowire structures

MRS bulletin, 2014-08, Vol.39 (8), p.668-677

2014

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Refractory W Ohmic Contacts to H-Terminated Diamond

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3516-3521

2020

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IEEE_Xplore

Changes to the Editorial Board

IEEE electron device letters, 2021-04, Vol.42 (4), p.460-460

Del Alamo, Jesus A. Del

2021

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IEEE_Xplore

A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

IEEE electron device letters, 2014-02, Vol.35 (2), p.178-180

2014

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IEEE_Xplore

Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications

IEEE transactions on electron devices, 2010-07, Vol.57 (7), p.1504-1511

2010

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IEEE_Xplore

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Microelectronics and reliability, 2010-06, Vol.50 (6), p.767-773

2010

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Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2142-2147

2017

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IEEE_Xplore

Change of Editor-in-Chief of EDL

IEEE electron device letters, 2023-02, Vol.44 (2), p.196-196

Alamo, Jesus A. Del

2023

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IEEE_Xplore

Changes to the Editorial Board

IEEE electron device letters, 2022-08, Vol.43 (8), p.1170-1170

Alamo, Jesus A. Del

2022

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IEEE_Xplore

Changes to the Editorial Board

IEEE electron device letters, 2023-01, Vol.44 (1), p.4-4

Alamo, Jesus A. Del

2023

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IEEE_Xplore

Sub-10-nm Fin-Width Self-Aligned InGaAs FinFETs

IEEE electron device letters, 2016-09, Vol.37 (9), p.1104-1107

2016

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IEEE_Xplore

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

IEEE electron device letters, 2014-05, Vol.35 (5), p.521-523

2014

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IEEE_Xplore

Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs

Microelectronics and reliability, 2012-12, Vol.52 (12), p.2875-2879

2012

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WO3 Passivation of Access Regions in Diamond MOSFETs

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3334-3340

2022

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IEEE_Xplore

Sub-Thermal Subthreshold Characteristics in Top-Down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs

IEEE electron device letters, 2017-07, Vol.38 (7), p.855-858

2017

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IEEE_Xplore

Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress

Microelectronics and reliability, 2014-12, Vol.54 (12), p.2668-2674

2014

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Fabrication and Characterization of Through-Substrate Interconnects

IEEE transactions on electron devices, 2010-06, Vol.57 (6), p.1261-1268

2010

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IEEE_Xplore

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-04, Vol.29 (4), p.287-289

2008

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IEEE_Xplore

A New Technique for Mobility Extraction in MOSFETs in the Presence of Prominent Gate Oxide Trapping: Application to InGaAs MOSFETs

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.1-7

2020

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IEEE_Xplore

Kudos to Our Golden Reviewers

IEEE electron device letters, 2019-12, Vol.40 (12), p.1891-1891

Alamo, Jesus A. Del

2019

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Protonic solid-state electrochemical synapse for physical neural networks

Nature communications, 2020-06, Vol.11 (1), p.3134-3134, Article 3134

2020

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Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.1963-1971

2011

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IEEE_Xplore

30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

IEEE electron device letters, 2008-08, Vol.29 (8), p.830-833

2008

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IEEE_Xplore

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Nanometre-scale electronics with III-V compound semiconductors

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

III–V compound semiconductor transistors—from planar to nanowire structures

Refractory W Ohmic Contacts to H-Terminated Diamond

Changes to the Editorial Board

A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs

Change of Editor-in-Chief of EDL

Changes to the Editorial Board

Changes to the Editorial Board

Sub-10-nm Fin-Width Self-Aligned InGaAs FinFETs

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs

WO3 Passivation of Access Regions in Diamond MOSFETs

Sub-Thermal Subthreshold Characteristics in Top-Down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs

Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress

Fabrication and Characterization of Through-Substrate Interconnects

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

A New Technique for Mobility Extraction in MOSFETs in the Presence of Prominent Gate Oxide Trapping: Application to InGaAs MOSFETs

Kudos to Our Golden Reviewers

Protonic solid-state electrochemical synapse for physical neural networks

Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs

30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

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