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Protonic solid-state electrochemical synapse for physical neural networks

Nature communications, 2020-06, Vol.11 (1), p.3134-3134, Article 3134

2020

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CMOS-Compatible Protonic Programmable Resistor Based on Phosphosilicate Glass Electrolyte for Analog Deep Learning

Nano letters, 2021-07, Vol.21 (14), p.6111-6116

2021

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In Situ Thermal Atomic Layer Etching for Sub‑5 nm InGaAs Multigate MOSFETs

Nano letters, 2019-08, Vol.19 (8), p.5159-5166

2019

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Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics

Journal of materials research, 2017-09, Vol.32 (18), p.3458-3468

2017

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Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2895-2901

2009

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IEEE_Xplore

Nanometre-scale electronics with III-V compound semiconductors

Nature (London), 2011-11, Vol.479 (7373), p.317-323

del Alamo, Jesús A

2011

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Nanosecond protonic programmable resistors for analog deep learning

Science (American Association for the Advancement of Science), 2022-07, Vol.377 (6605), p.539-543

2022

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Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications

Energies (Basel), 2017, Vol.10 (2), p.233-233

2017

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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.132-140

2011

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IEEE_Xplore

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Microelectronics and reliability, 2011-02, Vol.51 (2), p.201-206

2011

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Neural Network Training With Asymmetric Crosspoint Elements

Frontiers in artificial intelligence, 2022-05, Vol.5, p.891624-891624

2022

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Neutral beam etching for device isolation in AlGaN/GaN HEMTs

Physica status solidi. A, Applications and materials science, 2017-03, Vol.214 (3), p.np-n/a

2017

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III–V compound semiconductor transistors—from planar to nanowire structures

MRS bulletin, 2014-08, Vol.39 (8), p.668-677

2014

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Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Applied physics letters, 2022-02, Vol.120 (8)

2022

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High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Microelectronics and reliability, 2010-06, Vol.50 (6), p.758-762

2010

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Robust Chemiresistive Behavior in Conductive Polymer/MOF Composites

Advanced materials (Weinheim), 2024-04, p.e2312382-e2312382

2024

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High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer

Applied physics letters, 2018-08, Vol.113 (9)

2018

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Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications

Semiconductor science and technology, 2018-05, Vol.33 (5), p.55012

2018

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Refractory W Ohmic Contacts to H-Terminated Diamond

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3516-3521

2020

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IEEE_Xplore

Changes to the Editorial Board

IEEE electron device letters, 2021-04, Vol.42 (4), p.460-460

Del Alamo, Jesus A. Del

2021

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IEEE_Xplore

Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications

IEEE transactions on electron devices, 2010-07, Vol.57 (7), p.1504-1511

2010

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IEEE_Xplore

A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

IEEE electron device letters, 2014-02, Vol.35 (2), p.178-180

2014

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IEEE_Xplore

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Microelectronics and reliability, 2010-06, Vol.50 (6), p.767-773

2010

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Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2142-2147

2017

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IEEE_Xplore

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Protonic solid-state electrochemical synapse for physical neural networks

CMOS-Compatible Protonic Programmable Resistor Based on Phosphosilicate Glass Electrolyte for Analog Deep Learning

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

In Situ Thermal Atomic Layer Etching for Sub‑5 nm InGaAs Multigate MOSFETs

Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Nanometre-scale electronics with III-V compound semiconductors

Nanosecond protonic programmable resistors for analog deep learning

Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Neural Network Training With Asymmetric Crosspoint Elements

Neutral beam etching for device isolation in AlGaN/GaN HEMTs

III–V compound semiconductor transistors—from planar to nanowire structures

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Robust Chemiresistive Behavior in Conductive Polymer/MOF Composites

High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer

Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications

Refractory W Ohmic Contacts to H-Terminated Diamond

Changes to the Editorial Board

Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications

A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs

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