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TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

IEEE electron device letters, 2008-10, Vol.29 (10), p.1098-1100

2008

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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-04, Vol.29 (4), p.287-289

2008

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30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

IEEE electron device letters, 2008-08, Vol.29 (8), p.830-833

2008

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The iLab Shared Architecture: A Web Services Infrastructure to Build Communities of Internet Accessible Laboratories

Proceedings of the IEEE, 2008-06, Vol.96 (6), p.931-950

2008

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Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2895-2901

2009

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A physical model for the kink effect in InAlAs/InGaAs HEMTs

IEEE transactions on electron devices, 2000-05, Vol.47 (5), p.922-930

2000

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A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-07, Vol.29 (7), p.665-667

2008

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Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

IEEE transactions on electron devices, 2002-04, Vol.49 (4), p.687-692

2002

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A through-wafer interconnect in silicon for RFICs

IEEE transactions on electron devices, 2004-11, Vol.51 (11), p.1765-1771

2004

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GaN HEMT reliability

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1200-1206

2009

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Lateral and Vertical Scaling of \hbox \hbox\hbox HEMTs for Post-Si-CMOS Logic Applications

IEEE transactions on electron devices, 2008-10, Vol.55 (10), p.2546-2553

2008

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A model for hydrogen-induced piezoelectric effect in InP HEMTs and GaAs PHEMTs

IEEE transactions on electron devices, 2002-11, Vol.49 (11), p.1849

2002

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Carrier-induced change in refractive index of InP, GaAs and InGaAsP

IEEE journal of quantum electronics, 1990-01, Vol.26 (1), p.113-122

1990

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Impact of substrate-surface potential on the performance of RF power LDMOSFETs on high-resistivity SOI

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1705-1711

2006

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Positive temperature coefficient of impact ionization in strained-Si

IEEE transactions on electron devices, 2005-07, Vol.52 (7), p.1627-1633

2005

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A Faraday cage isolation structure for substrate crosstalk suppression

IEEE microwave and wireless components letters, 2001-10, Vol.11 (10), p.410-412

2001

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Sub-40 nm SOI V-groove n-MOSFETs

IEEE electron device letters, 2002-02, Vol.23 (2), p.100-102

2002

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An insulator-lined silicon substrate-via technology with high aspect ratio

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.2181-2183

2001

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RF power LDMOSFET on SOI

IEEE electron device letters, 2001-03, Vol.22 (3), p.139-141

2001

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A Self-Aligned InGaAs HEMT Architecture for Logic Applications

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.297-304

2010

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Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack

IEEE transactions on electron devices, 2005-03, Vol.52 (3), p.305-310

2005

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Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

Journal of crystal growth, 2018-02, Vol.484, p.86-91

2018

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A metal/polysilicon damascene gate technology for RF power LDMOSFETs

IEEE electron device letters, 2003-11, Vol.24 (11), p.698-700

2003

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Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs

IEEE electron device letters, 1996-10, Vol.17 (10), p.473-475

1996

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Determining dominant breakdown mechanisms in InP HEMTs

IEEE electron device letters, 2001-12, Vol.22 (12), p.565-567

2001

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TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

The iLab Shared Architecture: A Web Services Infrastructure to Build Communities of Internet Accessible Laboratories

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

A physical model for the kink effect in InAlAs/InGaAs HEMTs

A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

A through-wafer interconnect in silicon for RFICs

GaN HEMT reliability

Lateral and Vertical Scaling of \hbox \hbox\hbox HEMTs for Post-Si-CMOS Logic Applications

A model for hydrogen-induced piezoelectric effect in InP HEMTs and GaAs PHEMTs

Carrier-induced change in refractive index of InP, GaAs and InGaAsP

Impact of substrate-surface potential on the performance of RF power LDMOSFETs on high-resistivity SOI

Positive temperature coefficient of impact ionization in strained-Si

A Faraday cage isolation structure for substrate crosstalk suppression

Sub-40 nm SOI V-groove n-MOSFETs

An insulator-lined silicon substrate-via technology with high aspect ratio

RF power LDMOSFET on SOI

A Self-Aligned InGaAs HEMT Architecture for Logic Applications

Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

A metal/polysilicon damascene gate technology for RF power LDMOSFETs

Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs

Determining dominant breakdown mechanisms in InP HEMTs

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