UB Paderborn / Katalog / Suche / in CDI

Formation energies and relative stability of perfect and faulted dislocation loops in silicon

Journal of applied physics, 2000-06, Vol.87 (12), p.8420-8428

2000

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Resonant Raman scattering in polycrystalline silicon thin films

Applied physics letters, 1998-09, Vol.73 (12), p.1718-1720

1998

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Extended defects in shallow implants

Applied physics. A, Materials science & processing, 2003-05, Vol.76 (7), p.1025-1033

2003

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On the “Life” of {113} Defects

MRS proceedings, 2004, Vol.810, Article C3.7

2004

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Ion beam synthesis of GaN precipitates in GaAs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.10-14

2002

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Ion beam induced defects in crystalline silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-02, Vol.216 (1-4), p.46-56

2004

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Influence of dopant concentration and type of substrate on the local organization of low-pressure chemical vapour deposition in situ boron doped silicon films from silane and boron trichloride

Thin solid films, 2004-01, Vol.446 (2), p.218-226

2004

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Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.147 (1), p.1-12

1999

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Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-02, Vol.216 (1-4), p.173-177

2004

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Kinetic aspects of the growth of hydrogen induced platelets in SiC

Journal of applied physics, 2000-06, Vol.87 (12), p.8415-8419

2000

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Transient enhanced diffusion of boron in presence of end-of-range defects

Journal of applied physics, 1997-09, Vol.82 (6), p.2855-2861

1997

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Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-05, Vol.178 (1), p.84-88

2001

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TEM studies of the defects introduced by ion implantation in SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.147 (1), p.62-67

1999

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Relative Stability of Perfect and Faulted Dislocation Loops in Silicon

MRS proceedings, 1999, Vol.568, Article 219

1999

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Identification of EOR defects due to the regrowth of amorphous layers created by ion bombardment

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1994-02, Vol.84 (2), p.190-194

1994

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Improved characterization of polycrystalline silicon film, by resonant Raman scattering

Thin solid films, 1999-01, Vol.337 (1), p.93-97

1999

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Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.148 (1), p.273-278

1999

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The Influence of the Initial Supersaturation of Si Interstitial Atoms on the Relative Thermal Stability of Dislocation Loops in Silicon

MRS proceedings, 2000, Vol.610, Article B11.11

2000

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On the high-temperature stress-induced spreading of superlattice intrinsic stacking faults in γ' nickel-based single crystals

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1990-08, Vol.62 (2), p.253-266

1990

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Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers

MRS proceedings, 1996, Vol.438, Article 3

1996

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Crystallization of amorphous thin LPCVD Si films: “in situ” TEM measurement of nucleation and grain growth rates

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 1993-12, Vol.173 (1), p.377-380

1993

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Thermal evolution of extended defects in implanted Si:: impact on dopant diffusion

Materials science in semiconductor processing, 2000-08, Vol.3 (4), p.269-277

2000

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Influence of substrate nature on the microstructure of LPCVD silicon films

Journal of materials science letters, 1998-11, Vol.17 (22), p.1899-1901

1998

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Electron microscopic investigation of the contrast on dislocation loops seen edge-on in InP (B3 structure)

Physica status solidi. A, Applied research, 1983-02, Vol.75 (2), p.K121-K123

1983

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Material and electronic properties of boron-doped silicon films deposited from SiH4-BCl3-N2 mixtures in an industrial low pressure chemical vapour deposition furnace

Thin solid films, 1991-09, Vol.204 (1), p.33-48

1991

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Formation energies and relative stability of perfect and faulted dislocation loops in silicon

Resonant Raman scattering in polycrystalline silicon thin films

Extended defects in shallow implants

On the “Life” of {113} Defects

Ion beam synthesis of GaN precipitates in GaAs

Ion beam induced defects in crystalline silicon

Influence of dopant concentration and type of substrate on the local organization of low-pressure chemical vapour deposition in situ boron doped silicon films from silane and boron trichloride

Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion

Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution

Kinetic aspects of the growth of hydrogen induced platelets in SiC

Transient enhanced diffusion of boron in presence of end-of-range defects

Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon

TEM studies of the defects introduced by ion implantation in SiC

Relative Stability of Perfect and Faulted Dislocation Loops in Silicon

Identification of EOR defects due to the regrowth of amorphous layers created by ion bombardment

Improved characterization of polycrystalline silicon film, by resonant Raman scattering

Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients

The Influence of the Initial Supersaturation of Si Interstitial Atoms on the Relative Thermal Stability of Dislocation Loops in Silicon

On the high-temperature stress-induced spreading of superlattice intrinsic stacking faults in γ' nickel-based single crystals

Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers

Crystallization of amorphous thin LPCVD Si films: “in situ” TEM measurement of nucleation and grain growth rates

Thermal evolution of extended defects in implanted Si:: impact on dopant diffusion

Influence of substrate nature on the microstructure of LPCVD silicon films

Electron microscopic investigation of the contrast on dislocation loops seen edge-on in InP (B3 structure)

Material and electronic properties of boron-doped silicon films deposited from SiH4-BCl3-N2 mixtures in an industrial low pressure chemical vapour deposition furnace

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