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Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination

Journal of lightwave technology, 1990-08, Vol.8 (8), p.1137-1144

1990

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A simple model and calculation of the influence of doping and intrinsic concentrations on the interstitial-substitutional diffusion mechanism: application to Zn and Cd in InP

Japanese Journal of Applied Physics, 1986-08, Vol.25 (8), p.1169-1173

1986

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The temperature-dependent diffusion mechanism of Zn in InP using the semiclosed diffusion method

Japanese Journal of Applied Physics, 1984-01, Vol.23 (5), p.628-633

1984

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Double zinc diffusion fronts in InP: correlation with models of varying charge transfer during interstitial-substitutional interchange

Japanese Journal of Applied Physics, 1985-01, Vol.24 (2), p.239-242

1985

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Optical investigations of the band offsets in an InGaAs-InGaAsP-InP double-step heterostructure

Semiconductor science and technology, 1990-08, Vol.5 (8), p.918-920

1990

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Use of In-Zn-As ternary sources for the diffusion of Zn in GaAs by the semiclosed-box method

Japanese Journal of Applied Physics, 1986-06, Vol.25 (6), p.813-817

1986

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Diffusion Limited Transient Response of Heterojunction Photodiodes

Japanese Journal of Applied Physics, 1980, Vol.19 (4), p.L189-L192

1980

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An extra diffusion of Zn into GaAs in low concentration range: application of the model of varying charge transfer

Japanese Journal of Applied Physics, 1987-10, Vol.26 (10), p.1630-1633

1987

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Gain compression and phase-amplitude coupling in GaInAs quantum well lasers with three, five and seven wells

Electronics letters, 1991, Vol.27 (6), p.513-515

1991

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C - V measurement and modelization of GaInAs/InP heterointerface with traps

Journal of applied physics, 1987-03, Vol.61 (5), p.1941-1946

1987

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High yield manufacture of very low threshold, high reliability, 1.30-µm buried heterostructure laser diodes grown by metal organic chemical vapor deposition

Journal of lightwave technology, 1986, Vol.4 (10), p.1470-1474

1986

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Very low threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM-VPE

Electronics letters, 1982, Vol.18 (20), p.870

1982

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1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy

Applied physics letters, 1989, Vol.55 (20), p.2105-2107

1989

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Some characteristics of the GaAs/GaAlAs graded-index separate-confinement heterostructure quantum well laser structure

Applied physics letters, 1984-03, Vol.44 (5), p.476-478

1984

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Monolithic integration of optoelectronic devices with reactive matching networks for microwave applications

IEEE photonics technology letters, 1992-11, Vol.4 (11), p.1248-1250

1992

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The photo-crystallization of amorphous selenium thin films

Journal of non-crystalline solids, 1974-01, Vol.15 (3), p.505-516

1974

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Dark-current and capacitance analysis of InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition

Journal of applied physics, 1986-03, Vol.59 (5), p.1771-1773

1986

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Low Threshold CW Operation GaInAsP/InP Mushroom Stripe Laser (MSL) Emitting at 1.27 µm

Japanese Journal of Applied Physics, 1982-11, Vol.21 (11R), p.1655

1982

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Electro-optical modulators using novel buried waveguides in GaInAsP/InP material

Electronics letters, 1988, Vol.24 (4), p.221-223

1988

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Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD

IEEE journal of quantum electronics, 1985-06, Vol.21 (6), p.507-511

1985

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CW phase-locked array Ga0.25In0.75As0.5P0.5-Inp high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition

Applied physics letters, 1987-02, Vol.50 (5), p.230-232

1987

Volltextzugriff (PDF)

Vieillissement accéléré et dégradation des diodes électroluminescentes à double hétérostructure (GaAl)As-GaAs

Revue de physique appliquée, 1979, Vol.14 (4), p.563-567

1979

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Low threshold current GaAs/GaAlAs GRIN-SCH stripe lasers grown by OMVPE

Electronics letters, 1983-12, Vol.19 (25-26), p.1082-1084

1983

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CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD

Electronics letters, 1984, Vol.20 (21), p.850-851

1984

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Thin film micro-differential thermal analysis

Journal of physics. E, Scientific instruments, 1974-05, Vol.7 (5), p.355-357

1974

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Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination

A simple model and calculation of the influence of doping and intrinsic concentrations on the interstitial-substitutional diffusion mechanism: application to Zn and Cd in InP

The temperature-dependent diffusion mechanism of Zn in InP using the semiclosed diffusion method

Double zinc diffusion fronts in InP: correlation with models of varying charge transfer during interstitial-substitutional interchange

Optical investigations of the band offsets in an InGaAs-InGaAsP-InP double-step heterostructure

Use of In-Zn-As ternary sources for the diffusion of Zn in GaAs by the semiclosed-box method

Diffusion Limited Transient Response of Heterojunction Photodiodes

An extra diffusion of Zn into GaAs in low concentration range: application of the model of varying charge transfer

Gain compression and phase-amplitude coupling in GaInAs quantum well lasers with three, five and seven wells

C - V measurement and modelization of GaInAs/InP heterointerface with traps

High yield manufacture of very low threshold, high reliability, 1.30-µm buried heterostructure laser diodes grown by metal organic chemical vapor deposition

Very low threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM-VPE

1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy

Some characteristics of the GaAs/GaAlAs graded-index separate-confinement heterostructure quantum well laser structure

Monolithic integration of optoelectronic devices with reactive matching networks for microwave applications

The photo-crystallization of amorphous selenium thin films

Dark-current and capacitance analysis of InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition

Low Threshold CW Operation GaInAsP/InP Mushroom Stripe Laser (MSL) Emitting at 1.27 µm

Electro-optical modulators using novel buried waveguides in GaInAsP/InP material

Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD

CW phase-locked array Ga0.25In0.75As0.5P0.5-Inp high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition

Vieillissement accéléré et dégradation des diodes électroluminescentes à double hétérostructure (GaAl)As-GaAs

Low threshold current GaAs/GaAlAs GRIN-SCH stripe lasers grown by OMVPE

CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD

Thin film micro-differential thermal analysis

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