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Highly Efficient Light-Emitting Diodes with Microcavities

Science (American Association for the Advancement of Science), 1994-08, Vol.265 (5174), p.943-945

1994

Volltextzugriff (PDF)

Resonant cavity light-emitting diode

Applied physics letters, 1992-02, Vol.60 (8), p.921-923

1992

Volltextzugriff (PDF)

Ga2O3 films for electronic and optoelectronic applications

Journal of applied physics, 1995-01, Vol.77 (2), p.686-693

1995

Volltextzugriff (PDF)

Dielectric properties of electron-beam deposited Ga2O3 films

Applied physics letters, 1994-05, Vol.64 (20), p.2715-2717

1994

Volltextzugriff (PDF)

Controlled atomic spontaneous emission from Er3+ in a transparent Si/SiO2 microcavity

Physical review letters, 1993-07, Vol.71 (4), p.517-520

1993

Volltextzugriff (PDF)

Giant enhancement of luminescence intensity in Er-doped Si/SiO2 resonant cavities

Applied physics letters, 1992-09, Vol.61 (12), p.1381-1383

1992

Volltextzugriff (PDF)

Top-surface emitting lasers with 1.9 V threshold voltage and the effect of spatial hole burning on their transverse mode operation and efficiencies

Applied physics letters, 1993-03, Vol.62 (13), p.1448-1450

1993

Volltextzugriff (PDF)

Cr-doped GaAs/AlGaAs semi-insulating multiple quantum well photorefractive devices

Applied physics letters, 1993-02, Vol.62 (5), p.464-466

1993

Volltextzugriff (PDF)

In-vacuum cleaving and coating of semiconductor laser facets using thin silicon and a dielectric

Journal of applied physics, 1996-12, Vol.80 (11), p.6448-6451

1996

Volltextzugriff (PDF)

Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant-cavity light-emitting diode

Applied physics letters, 1992-11, Vol.61 (19), p.2287-2289

1992

Volltextzugriff (PDF)

Elimination of heterojunction band discontinuities by modulation doping

Applied physics letters, 1992-01, Vol.60 (4), p.466-468

1992

Volltextzugriff (PDF)

Advancing metal–oxide–semiconductor theory: Steady-state nonequilibrium conditions

Journal of applied physics, 1997-06, Vol.81 (11), p.7647-7661

1997

Volltextzugriff (PDF)

High sensitivity optical image processing device based on CdZnTe/ZnTe multiple quantum well structures

Applied physics letters, 1991-10, Vol.59 (15), p.1832-1834

1991

Volltextzugriff (PDF)

Blue-green surface-emitting second-harmonic generators on (111)B GaaS

Applied physics letters, 1991-08, Vol.59 (8), p.896-898

1991

Volltextzugriff (PDF)

Enhanced photoluminescence by resonant absorption in Er-doped SiO2/Si microcavities

Applied physics letters, 1993-11, Vol.63 (19), p.2603-2605

1993

Volltextzugriff (PDF)

Resonant-cavity p-i-n photodetector utilizing an electron-beam evaporated Si/SiO2 microcavity

Applied physics letters, 1993-07, Vol.63 (3), p.391-393

1993

Volltextzugriff (PDF)

Properties of Al2O3 optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films

Applied physics letters, 1994-05, Vol.64 (22), p.2976-2978

1994

Volltextzugriff (PDF)

Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors

Electronics letters, 1990, Vol.26 (19), p.1590-1592

1990

Volltextzugriff (PDF)

High temperature performance of three-quantum-well vertical-cavity top-emitting lasers

Electronics letters, 1991-01, Vol.27 (5), p.457-458

1991

Volltextzugriff (PDF)

Low-threshold vertical cavity surface-emitting lasers with metallic reflectors

Applied physics letters, 1990-07, Vol.57 (2), p.117-119

1990

Volltextzugriff (PDF)

Power and efficiency limits in single-mirror light emitting diodes with enhanced intensity

Electronics letters, 1992, Vol.28 (23), p.2169-2171

1992

Volltextzugriff (PDF)

Implant-apertured and index-guided vertical-cavity surface-emitting lasers (I2-VCSELs)

IEEE photonics technology letters, 1999-05, Vol.11 (5), p.500-502

1999

Volltextzugriff (PDF)

Increased fiber communications bandwidth from a resonant cavity light emitting diode emitting at λ=940 nm

Applied physics letters, 1993-11, Vol.63 (19), p.2600-2602

1993

Volltextzugriff (PDF)

8×18 top emitting independently addressable surface emitting laser arrays with uniform threshold current and low threshold voltage

Applied physics letters, 1993-04, Vol.62 (15), p.1718-1720

1993

Volltextzugriff (PDF)

Carrier transport in a photorefractive multiple quantum well device

Applied physics letters, 1996-07, Vol.69 (3), p.316-318

1996

Volltextzugriff (PDF)

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Highly Efficient Light-Emitting Diodes with Microcavities

Resonant cavity light-emitting diode

Ga2O3 films for electronic and optoelectronic applications

Dielectric properties of electron-beam deposited Ga2O3 films

Controlled atomic spontaneous emission from Er3+ in a transparent Si/SiO2 microcavity

Giant enhancement of luminescence intensity in Er-doped Si/SiO2 resonant cavities

Top-surface emitting lasers with 1.9 V threshold voltage and the effect of spatial hole burning on their transverse mode operation and efficiencies

Cr-doped GaAs/AlGaAs semi-insulating multiple quantum well photorefractive devices

In-vacuum cleaving and coating of semiconductor laser facets using thin silicon and a dielectric

Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant-cavity light-emitting diode

Elimination of heterojunction band discontinuities by modulation doping

Advancing metal–oxide–semiconductor theory: Steady-state nonequilibrium conditions

High sensitivity optical image processing device based on CdZnTe/ZnTe multiple quantum well structures

Blue-green surface-emitting second-harmonic generators on (111)B GaaS

Enhanced photoluminescence by resonant absorption in Er-doped SiO2/Si microcavities

Resonant-cavity p-i-n photodetector utilizing an electron-beam evaporated Si/SiO2 microcavity

Properties of Al2O3 optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films

Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors

High temperature performance of three-quantum-well vertical-cavity top-emitting lasers

Low-threshold vertical cavity surface-emitting lasers with metallic reflectors

Power and efficiency limits in single-mirror light emitting diodes with enhanced intensity

Implant-apertured and index-guided vertical-cavity surface-emitting lasers (I2-VCSELs)

Increased fiber communications bandwidth from a resonant cavity light emitting diode emitting at λ=940 nm

8×18 top emitting independently addressable surface emitting laser arrays with uniform threshold current and low threshold voltage

Carrier transport in a photorefractive multiple quantum well device

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